GB815208A - Improvements in or relating to the manufacture of transistors and other semi-conductor devices - Google Patents

Improvements in or relating to the manufacture of transistors and other semi-conductor devices

Info

Publication number
GB815208A
GB815208A GB2393657A GB2393657A GB815208A GB 815208 A GB815208 A GB 815208A GB 2393657 A GB2393657 A GB 2393657A GB 2393657 A GB2393657 A GB 2393657A GB 815208 A GB815208 A GB 815208A
Authority
GB
United Kingdom
Prior art keywords
lead
semi
electrolyte
metal
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2393657A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken AG
Original Assignee
Telefunken AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken AG filed Critical Telefunken AG
Publication of GB815208A publication Critical patent/GB815208A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

815,208. Joining leads to semi-conductor devices by electrolysis. TELEFUNKEN G.m.b.H. July 29, 1957 [Aug. 27, 1956], No. 23936/57. Classes 37 and 41. A lead is attached to a transistor or other semi-conductor body by mounting the lead with its end facing and adjacent the surface of the body in a metal containing electrolyte cathodically depositing metal on said surface opposite said lead serving as anode until the deposit bridges the gap between the body and the lead, and then cathodically depositing more metal on said bridging deposit with the help of an auxiliary electrode as anode. Preferably the end of the lead facing the body is pointed and the auxiliary electrode is a ring concentric. with the lead. The semi-conductor body may be coated with an insulating laquer except where the metal is to be deposited and immersed in the electrolyte or may be arranged as shown so that only one face of the body 3 contacts the electrolyte 2. The cavity in the body may be formed initially by drilling and finally shaped by electrolytic etching using a non-plating electrolyte, the extent of the etching being limited by the potential barrier 10 set up by the back-bias applied to the contact 9 on the back of the semi-conductor body, which back-bias also effects metal deposition if a plating metal salt is then added to the electrolyte.
GB2393657A 1956-08-27 1957-07-29 Improvements in or relating to the manufacture of transistors and other semi-conductor devices Expired GB815208A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET12602A DE1029485B (en) 1956-08-27 1956-08-27 Method for attaching a lead wire to the surface of a semiconducting body

Publications (1)

Publication Number Publication Date
GB815208A true GB815208A (en) 1959-06-17

Family

ID=7547072

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2393657A Expired GB815208A (en) 1956-08-27 1957-07-29 Improvements in or relating to the manufacture of transistors and other semi-conductor devices

Country Status (2)

Country Link
DE (1) DE1029485B (en)
GB (1) GB815208A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3042603A (en) * 1959-05-26 1962-07-03 Philco Corp Thickness modifying apparatus
NL256300A (en) * 1959-05-28 1900-01-01

Also Published As

Publication number Publication date
DE1029485B (en) 1958-05-08

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