GB815208A - Improvements in or relating to the manufacture of transistors and other semi-conductor devices - Google Patents
Improvements in or relating to the manufacture of transistors and other semi-conductor devicesInfo
- Publication number
- GB815208A GB815208A GB2393657A GB2393657A GB815208A GB 815208 A GB815208 A GB 815208A GB 2393657 A GB2393657 A GB 2393657A GB 2393657 A GB2393657 A GB 2393657A GB 815208 A GB815208 A GB 815208A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lead
- semi
- electrolyte
- metal
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000003792 electrolyte Substances 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- 238000005553 drilling Methods 0.000 abstract 1
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
815,208. Joining leads to semi-conductor devices by electrolysis. TELEFUNKEN G.m.b.H. July 29, 1957 [Aug. 27, 1956], No. 23936/57. Classes 37 and 41. A lead is attached to a transistor or other semi-conductor body by mounting the lead with its end facing and adjacent the surface of the body in a metal containing electrolyte cathodically depositing metal on said surface opposite said lead serving as anode until the deposit bridges the gap between the body and the lead, and then cathodically depositing more metal on said bridging deposit with the help of an auxiliary electrode as anode. Preferably the end of the lead facing the body is pointed and the auxiliary electrode is a ring concentric. with the lead. The semi-conductor body may be coated with an insulating laquer except where the metal is to be deposited and immersed in the electrolyte or may be arranged as shown so that only one face of the body 3 contacts the electrolyte 2. The cavity in the body may be formed initially by drilling and finally shaped by electrolytic etching using a non-plating electrolyte, the extent of the etching being limited by the potential barrier 10 set up by the back-bias applied to the contact 9 on the back of the semi-conductor body, which back-bias also effects metal deposition if a plating metal salt is then added to the electrolyte.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET12602A DE1029485B (en) | 1956-08-27 | 1956-08-27 | Method for attaching a lead wire to the surface of a semiconducting body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB815208A true GB815208A (en) | 1959-06-17 |
Family
ID=7547072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2393657A Expired GB815208A (en) | 1956-08-27 | 1957-07-29 | Improvements in or relating to the manufacture of transistors and other semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1029485B (en) |
| GB (1) | GB815208A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3042603A (en) * | 1959-05-26 | 1962-07-03 | Philco Corp | Thickness modifying apparatus |
| NL256300A (en) * | 1959-05-28 | 1900-01-01 |
-
1956
- 1956-08-27 DE DET12602A patent/DE1029485B/en active Pending
-
1957
- 1957-07-29 GB GB2393657A patent/GB815208A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1029485B (en) | 1958-05-08 |
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