GB809080A - Methods of manufacturing selenium rectifiers - Google Patents

Methods of manufacturing selenium rectifiers

Info

Publication number
GB809080A
GB809080A GB3816/56A GB381656A GB809080A GB 809080 A GB809080 A GB 809080A GB 3816/56 A GB3816/56 A GB 3816/56A GB 381656 A GB381656 A GB 381656A GB 809080 A GB809080 A GB 809080A
Authority
GB
United Kingdom
Prior art keywords
layer
applying
alloy
per cent
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3816/56A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB809080A publication Critical patent/GB809080A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042—Preparation of foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/044—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Physical Vapour Deposition (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
GB3816/56A 1955-02-07 1956-02-07 Methods of manufacturing selenium rectifiers Expired GB809080A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL21081A DE1101625B (de) 1955-02-07 1955-02-07 Verfahren zum Herstellen von Selengleichrichtern

Publications (1)

Publication Number Publication Date
GB809080A true GB809080A (en) 1959-02-18

Family

ID=7261952

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3816/56A Expired GB809080A (en) 1955-02-07 1956-02-07 Methods of manufacturing selenium rectifiers

Country Status (5)

Country Link
US (1) US2806984A (https=)
DE (1) DE1101625B (https=)
FR (1) FR1152585A (https=)
GB (1) GB809080A (https=)
NL (2) NL203974A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212917A (en) * 1962-01-03 1965-10-19 Ibm Electroless plating procedure
US3439240A (en) * 1966-07-29 1969-04-15 Int Rectifier Corp Selenium rectifier
GB1435537A (en) * 1973-06-19 1976-05-12 Standard Telephones Cables Ltd Rectifier
FR2996822B1 (fr) 2012-10-12 2015-07-31 Inst Superieur De L Aeronautique Et De L Espace Drone tele-opere comportant un moyen de fixation a une surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519161C (de) * 1927-12-06 1931-02-25 Ernst Presser Wechselstrom-Gleichrichter mit zwischen zwei Elektroden angeordnetem Gleichrichtermaterial
CH200171A (de) * 1937-02-08 1938-09-30 Sueddeutsche Apparate Fabrik G Selen-Metall-Gleichrichtereinheit.
DE916085C (de) * 1937-11-01 1954-08-02 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
US2334554A (en) * 1942-06-22 1943-11-16 Gen Electric Method of producing blocking layer devices
BE485774A (https=) * 1947-11-29 1900-01-01

Also Published As

Publication number Publication date
NL203974A (https=) 1900-01-01
DE1101625B (de) 1961-03-09
NL92960C (https=) 1900-01-01
US2806984A (en) 1957-09-17
FR1152585A (fr) 1958-02-20

Similar Documents

Publication Publication Date Title
GB796896A (en) Method of producing selenium rectifiers
US2279746A (en) Alternating electric current rectifier of the selenium type
GB809080A (en) Methods of manufacturing selenium rectifiers
GB1179985A (en) Method of Preparing Photoconductive Layers of Substrates.
US4492812A (en) Electrical contacts for a solar cell
US2334554A (en) Method of producing blocking layer devices
GB500342A (en) Improvements relating to dry surface-contact electric rectifiers
GB1426029A (en) Method for forming a superconducting contact
US2286237A (en) Copper powder
US2554237A (en) Rectifier
US2162362A (en) Asymmetrical conductor
US2229807A (en) Method of manufacturing selenium rectifiers
US2446467A (en) Dry plate rectifier
US3694908A (en) Method of producing a selenium rectifier
US2787745A (en) Counter electrode for dry disk type rectifiers
US2411560A (en) Selenium element
GB880367A (en) Improvements in or relating to selenium rectifiers
GB460012A (en) Improvements in or relating to light sensitive layers for photoelectric cells
GB822366A (en) Improvements in and relating to the protective coating of articles of aluminium or alloys of aluminium
GB937151A (en) Method of manufacturing selenium rectifiers and rectifiers manufactured thereby
GB805554A (en) Improvements in and relating to barrier layer cells
GB624401A (en) Improvements in bearings
GB841254A (en) Improvements in or relating to methods of producing semi-conductive devices
GB471157A (en) Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type
GB830027A (en) Selenium rectifier