GB808973A - Improvements in semiconductor devices and methods for their manufacture - Google Patents

Improvements in semiconductor devices and methods for their manufacture

Info

Publication number
GB808973A
GB808973A GB10698/55A GB1069855A GB808973A GB 808973 A GB808973 A GB 808973A GB 10698/55 A GB10698/55 A GB 10698/55A GB 1069855 A GB1069855 A GB 1069855A GB 808973 A GB808973 A GB 808973A
Authority
GB
United Kingdom
Prior art keywords
per cent
silicon
mol
germanium
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10698/55A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB808973A publication Critical patent/GB808973A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/12—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
GB10698/55A 1954-05-03 1955-04-13 Improvements in semiconductor devices and methods for their manufacture Expired GB808973A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US427098A US2817798A (en) 1954-05-03 1954-05-03 Semiconductors

Publications (1)

Publication Number Publication Date
GB808973A true GB808973A (en) 1959-02-18

Family

ID=23693481

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10698/55A Expired GB808973A (en) 1954-05-03 1955-04-13 Improvements in semiconductor devices and methods for their manufacture

Country Status (5)

Country Link
US (1) US2817798A (cg-RX-API-DMAC10.html)
BE (1) BE537841A (cg-RX-API-DMAC10.html)
CH (1) CH354168A (cg-RX-API-DMAC10.html)
FR (1) FR1123706A (cg-RX-API-DMAC10.html)
GB (1) GB808973A (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113882C (cg-RX-API-DMAC10.html) * 1952-06-13
US2919389A (en) * 1955-04-28 1959-12-29 Siemens Ag Semiconductor arrangement for voltage-dependent capacitances
DE1170555B (de) * 1956-07-23 1964-05-21 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps
NL242895A (cg-RX-API-DMAC10.html) * 1958-09-02
US3124493A (en) * 1959-01-26 1964-03-10 Method for making the same
NL266513A (cg-RX-API-DMAC10.html) * 1960-07-01
US3235957A (en) * 1964-05-20 1966-02-22 Rca Corp Method of manufacturing a thermoelectric device
KR100654486B1 (ko) * 1998-11-26 2006-12-05 신에쯔 한도타이 가부시키가이샤 ＳｉＧｅ 결정
CN115975745A (zh) * 2023-01-04 2023-04-18 四川晶科能源有限公司 籽晶酸洗的配方和方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2485069A (en) * 1944-07-20 1949-10-18 Bell Telephone Labor Inc Translating material of silicon base
US2538593A (en) * 1949-04-30 1951-01-16 Rca Corp Semiconductor amplifier construction
US2731704A (en) * 1952-12-27 1956-01-24 Raytheon Mfg Co Method of making transistors

Also Published As

Publication number Publication date
US2817798A (en) 1957-12-24
BE537841A (cg-RX-API-DMAC10.html) 1900-01-01
CH354168A (de) 1961-05-15
FR1123706A (fr) 1956-09-26

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