GB782664A - Semiconductive rectifying bodies - Google Patents

Semiconductive rectifying bodies

Info

Publication number
GB782664A
GB782664A GB6456/55A GB645655A GB782664A GB 782664 A GB782664 A GB 782664A GB 6456/55 A GB6456/55 A GB 6456/55A GB 645655 A GB645655 A GB 645655A GB 782664 A GB782664 A GB 782664A
Authority
GB
United Kingdom
Prior art keywords
type
zone
terminal
resistivity
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6456/55A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB782664A publication Critical patent/GB782664A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/50PIN diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
GB6456/55A 1954-03-05 1955-03-04 Semiconductive rectifying bodies Expired GB782664A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41427554A 1954-03-05 1954-03-05
US491908A US2811682A (en) 1954-03-05 1955-03-03 Silicon power rectifier

Publications (1)

Publication Number Publication Date
GB782664A true GB782664A (en) 1957-09-11

Family

ID=27022485

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6456/55A Expired GB782664A (en) 1954-03-05 1955-03-04 Semiconductive rectifying bodies

Country Status (7)

Country Link
US (1) US2811682A (https=)
BE (1) BE536150A (https=)
CH (1) CH337583A (https=)
DE (1) DE1033786B (https=)
FR (1) FR1115845A (https=)
GB (1) GB782664A (https=)
NL (2) NL193595A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107648C (https=) * 1956-05-15
BE557842A (https=) * 1956-06-01
NL224227A (https=) * 1957-01-29
FR1192082A (fr) * 1957-03-20 1959-10-23 Bosch Gmbh Robert Semi-conducteur de puissance
US3051878A (en) * 1957-05-02 1962-08-28 Sarkes Tarzian Semiconductor devices and method of manufacturing them
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
US2943268A (en) * 1957-07-30 1960-06-28 Texaco Inc Automatic gain control amplifier circuit
US3007092A (en) * 1957-12-23 1961-10-31 Hughes Aircraft Co Semiconductor devices
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
DE1104075B (de) * 1958-05-14 1961-04-06 Telefunken Gmbh Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung
NL239515A (https=) * 1958-06-18
US3021595A (en) * 1958-07-02 1962-02-20 Texas Instruments Inc Ohmic contacts for silicon conductor devices and method for making
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US3116442A (en) * 1959-07-27 1963-12-31 Link Belt Co Silicon rectifier assembly comprising a heat conductive mounting base
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (https=) * 1948-06-26
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE506280A (https=) * 1950-10-10
BE525428A (https=) * 1952-12-30

Also Published As

Publication number Publication date
NL99247C (https=)
BE536150A (https=)
FR1115845A (fr) 1956-04-30
NL193595A (https=)
CH337583A (fr) 1959-04-15
US2811682A (en) 1957-10-29
DE1033786B (de) 1958-07-10

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