GB761926A - Self-powered semiconductive devices - Google Patents
Self-powered semiconductive devicesInfo
- Publication number
- GB761926A GB761926A GB20073/54A GB2007354A GB761926A GB 761926 A GB761926 A GB 761926A GB 20073/54 A GB20073/54 A GB 20073/54A GB 2007354 A GB2007354 A GB 2007354A GB 761926 A GB761926 A GB 761926A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- junction
- transistor
- alloy
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/311—Design considerations for internal polarisation in bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US761926XA | 1953-08-03 | 1953-08-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB761926A true GB761926A (en) | 1956-11-21 |
Family
ID=22130499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB20073/54A Expired GB761926A (en) | 1953-08-03 | 1954-07-08 | Self-powered semiconductive devices |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE530809A (enrdf_load_stackoverflow) |
GB (1) | GB761926A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
DE1196295B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung |
DE1207511B (de) * | 1959-05-06 | 1965-12-23 | Texas Instruments Inc | Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
FR2629639A1 (en) * | 1988-04-01 | 1989-10-06 | Balkanski Minko | Self-powered integrated component of the junction type and method for its manufacture |
EP0637037A1 (en) * | 1993-07-30 | 1995-02-01 | Texas Instruments Incorporated | Radioisotope power cells |
-
0
- BE BE530809D patent/BE530809A/xx unknown
-
1954
- 1954-07-08 GB GB20073/54A patent/GB761926A/en not_active Expired
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
DE1196299B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196300B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung |
DE1196297B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196301B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen |
DE1196298B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung |
DE1196295B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung |
DE1196296B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196297C2 (de) * | 1959-02-06 | 1974-01-17 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196299C2 (de) * | 1959-02-06 | 1974-03-07 | Texas Instruments Inc | Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung |
DE1207511B (de) * | 1959-05-06 | 1965-12-23 | Texas Instruments Inc | Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
FR2629639A1 (en) * | 1988-04-01 | 1989-10-06 | Balkanski Minko | Self-powered integrated component of the junction type and method for its manufacture |
EP0637037A1 (en) * | 1993-07-30 | 1995-02-01 | Texas Instruments Incorporated | Radioisotope power cells |
Also Published As
Publication number | Publication date |
---|---|
BE530809A (enrdf_load_stackoverflow) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB748925A (en) | Semiconductor electric signal translating devices and circuits employing them | |
GB800300A (en) | Improvement in or relating to semi-conductor devices | |
GB748414A (en) | Semiconductor signal translating elements and devices utilizing them | |
GB721740A (en) | Signal translating devices utilising semiconductive bodies | |
GB739294A (en) | Improvements in semi-conductor devices | |
GB879977A (en) | Improvements in semi-conductor devices | |
GB1057823A (en) | Improvements in semiconductor switch | |
GB871307A (en) | Transistor with double collector | |
GB807582A (en) | High power junction transistor | |
GB920630A (en) | Improvements in the fabrication of semiconductor elements | |
GB1251088A (enrdf_load_stackoverflow) | ||
GB995703A (en) | Improvements in semiconductive devices | |
GB761926A (en) | Self-powered semiconductive devices | |
GB1009547A (en) | Semiconductor transistor devices | |
GB849477A (en) | Improvements in or relating to semiconductor control devices | |
GB983266A (en) | Semiconductor switching devices | |
GB682206A (en) | Improvements in or relating to amplifiers employing semi-conductors | |
GB1100627A (en) | Power transistor | |
GB936165A (en) | Improvements in or relating to electrical power sources | |
GB998165A (en) | Improvements in or relating to electrical signal translating circuits | |
GB1502122A (en) | Semiconductor devices | |
GB741267A (en) | Improvements in or relating to transistor elements and transistor circuits | |
GB1337906A (en) | Integrated semiconductor structure | |
GB905945A (en) | Improvements in or relating to transistors | |
GB826916A (en) | Improvements in and relating to semiconductive signal-translating devices |