GB738216A - Improvements in and relating to broad area transistors - Google Patents

Improvements in and relating to broad area transistors

Info

Publication number
GB738216A
GB738216A GB16403/53A GB1640353A GB738216A GB 738216 A GB738216 A GB 738216A GB 16403/53 A GB16403/53 A GB 16403/53A GB 1640353 A GB1640353 A GB 1640353A GB 738216 A GB738216 A GB 738216A
Authority
GB
United Kingdom
Prior art keywords
electrodes
collector
emitter
germanium
soldered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16403/53A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB738216A publication Critical patent/GB738216A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/055Etched foil electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/08Working media
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4918Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Bipolar Transistors (AREA)
  • ing And Chemical Polishing (AREA)
GB16403/53A 1952-06-14 1953-06-15 Improvements in and relating to broad area transistors Expired GB738216A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29356852A 1952-06-14 1952-06-14
US603531A US2999195A (en) 1952-06-14 1956-08-13 Broad area transistors

Publications (1)

Publication Number Publication Date
GB738216A true GB738216A (en) 1955-10-12

Family

ID=26968019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16403/53A Expired GB738216A (en) 1952-06-14 1953-06-15 Improvements in and relating to broad area transistors

Country Status (4)

Country Link
US (1) US2999195A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE1291835B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB738216A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL299567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
US3051877A (en) * 1955-12-29 1962-08-28 Honeywell Regulator Co Semiconductor devices

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
US3087098A (en) * 1954-10-05 1963-04-23 Motorola Inc Transistor
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
NL290931A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-03-29 1900-01-01
US3275912A (en) * 1963-12-17 1966-09-27 Sperry Rand Corp Microelectronic chopper circuit having symmetrical base current feed

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
AT168228B (de) * 1948-02-26 1951-05-10 Western Electric Co Schaltelement aus halbleitendem Material
BE489418A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1948-06-26
NL147218C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1948-08-14
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
BE500302A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1949-11-30
US2771382A (en) * 1951-12-12 1956-11-20 Bell Telephone Labor Inc Method of fabricating semiconductors for signal translating devices
BE517808A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1952-03-14
US2651009A (en) * 1952-05-03 1953-09-01 Bjorksten Res Lab Inc Transistor design
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051877A (en) * 1955-12-29 1962-08-28 Honeywell Regulator Co Semiconductor devices
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors

Also Published As

Publication number Publication date
DE1291834B (de) 1969-04-03
US2999195A (en) 1961-09-05
DE1291835B (de) 1969-04-03
NL299567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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