GB732797A - Improvements in or relating to methods for the production of semi-conducting layers - Google Patents

Improvements in or relating to methods for the production of semi-conducting layers

Info

Publication number
GB732797A
GB732797A GB24374/52A GB2437452A GB732797A GB 732797 A GB732797 A GB 732797A GB 24374/52 A GB24374/52 A GB 24374/52A GB 2437452 A GB2437452 A GB 2437452A GB 732797 A GB732797 A GB 732797A
Authority
GB
United Kingdom
Prior art keywords
germanium
semi
layers
crucible
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24374/52A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of GB732797A publication Critical patent/GB732797A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB24374/52A 1952-01-22 1952-09-29 Improvements in or relating to methods for the production of semi-conducting layers Expired GB732797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307775X 1952-01-22

Publications (1)

Publication Number Publication Date
GB732797A true GB732797A (en) 1955-06-29

Family

ID=20307566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24374/52A Expired GB732797A (en) 1952-01-22 1952-09-29 Improvements in or relating to methods for the production of semi-conducting layers

Country Status (4)

Country Link
BE (1) BE514927A (fr)
CH (1) CH307775A (fr)
FR (1) FR1064045A (fr)
GB (1) GB732797A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548791A (fr) * 1955-06-20
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
DE1058634B (de) * 1956-06-07 1959-06-04 Ibm Deutschland Gasdiffusionsverfahren zur Herstellung eines Transistors
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
DE1071177B (fr) * 1958-01-17
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds
FR1317607A (fr) * 1961-03-14 1963-05-08
NL291466A (fr) * 1962-04-13
DE1237076B (de) * 1962-06-19 1967-03-23 Western Electric Co Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage

Also Published As

Publication number Publication date
BE514927A (fr)
FR1064045A (fr) 1954-05-10
CH307775A (de) 1955-06-15

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