GB727252A - Improvements in or relating to electric devices employing semiconductors - Google Patents

Improvements in or relating to electric devices employing semiconductors

Info

Publication number
GB727252A
GB727252A GB1045652A GB1045652A GB727252A GB 727252 A GB727252 A GB 727252A GB 1045652 A GB1045652 A GB 1045652A GB 1045652 A GB1045652 A GB 1045652A GB 727252 A GB727252 A GB 727252A
Authority
GB
United Kingdom
Prior art keywords
semi
wires
conductor
araldite
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1045652A
Inventor
Stanley Carden Shepard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1045652A priority Critical patent/GB727252A/en
Publication of GB727252A publication Critical patent/GB727252A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

727,252. Semiconductor devices. STANDARD TELEPHONES & CABLES, Ltd. April 17, 1953 [April 25, 1952], No. 10456/52. Class 37. A semi-conductor device is manufactured by mounting the semi-conductor body on a metal plate, arranging a metal wire loop substantially parallel to the plate to form a skeleton mould and such that an electrode mounted on the loop contacts the surface of the body, and filling the skeleton mould with a liquid polymerizable insulating compound such as " Araldite " (Registered Trade Mark) to form a solid mass embodying the semi-conductor and the electrode. Fig. 7 shows the metal plate 2 fixed to wires 3, 4, which are fixed to a nickel ring 13. Terminal wires 5 and 6, also fixed to ring 13, are held together by a glass bead 7 and their ends are bent round in two semicircles to form the skeleton mould over plate 2. Two point contact electrodes 9, 10 are welded to wires 5 and 6 and are arranged to contact the surface of the germanium body 11, forming a transistor. After filling the mould with the insulating liquid which is polymerised, the wires 3, 4, 5 and 6 are cut away from ring 13 to provide a transistor as shown in Fig. 1. Alternatively, one of the contacts 9, 10 may be connected to the semi-conductor body by a conducting cement such as that described in Specification 716,243, [Group IV (a)]. The arrangement may comprise an additional electrode, or only a single point contact to provide a rectifier. The insulating material may consist of " Araldite " or a mixture of " Araldite " and alumina, reference being made to Specifications 518,057, 579,698, [both in Group IV], 629,111, 630,647, 630,663, [all in Group IV (a)], and 708,054.
GB1045652A 1952-04-25 1952-04-25 Improvements in or relating to electric devices employing semiconductors Expired GB727252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1045652A GB727252A (en) 1952-04-25 1952-04-25 Improvements in or relating to electric devices employing semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1045652A GB727252A (en) 1952-04-25 1952-04-25 Improvements in or relating to electric devices employing semiconductors

Publications (1)

Publication Number Publication Date
GB727252A true GB727252A (en) 1955-03-30

Family

ID=9968200

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1045652A Expired GB727252A (en) 1952-04-25 1952-04-25 Improvements in or relating to electric devices employing semiconductors

Country Status (1)

Country Link
GB (1) GB727252A (en)

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