GB723179A - Improvements in or relating to methods of preparing single crystals of semi-conducting materials - Google Patents

Improvements in or relating to methods of preparing single crystals of semi-conducting materials

Info

Publication number
GB723179A
GB723179A GB25907/52A GB2590752A GB723179A GB 723179 A GB723179 A GB 723179A GB 25907/52 A GB25907/52 A GB 25907/52A GB 2590752 A GB2590752 A GB 2590752A GB 723179 A GB723179 A GB 723179A
Authority
GB
United Kingdom
Prior art keywords
hopper
semi
crystal
single crystals
hammer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25907/52A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Priority to GB25907/52A priority Critical patent/GB723179A/en
Priority to NL181984A priority patent/NL88128C/xx
Priority to FR1084879D priority patent/FR1084879A/fr
Publication of GB723179A publication Critical patent/GB723179A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB25907/52A 1953-09-30 1953-09-30 Improvements in or relating to methods of preparing single crystals of semi-conducting materials Expired GB723179A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB25907/52A GB723179A (en) 1953-09-30 1953-09-30 Improvements in or relating to methods of preparing single crystals of semi-conducting materials
NL181984A NL88128C (enExample) 1953-09-30 1953-10-10
FR1084879D FR1084879A (fr) 1953-09-30 1953-10-12 Cristaux en matières semi-conductrices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25907/52A GB723179A (en) 1953-09-30 1953-09-30 Improvements in or relating to methods of preparing single crystals of semi-conducting materials

Publications (1)

Publication Number Publication Date
GB723179A true GB723179A (en) 1955-02-02

Family

ID=10235277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25907/52A Expired GB723179A (en) 1953-09-30 1953-09-30 Improvements in or relating to methods of preparing single crystals of semi-conducting materials

Country Status (3)

Country Link
FR (1) FR1084879A (enExample)
GB (1) GB723179A (enExample)
NL (1) NL88128C (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1131187B (de) * 1958-06-03 1962-06-14 Wacker Chemie Gmbh Verfahren zum Reinigen, Umkristallisieren und Formen von Metallen, Nichtmetallen undderen Verbindungen oder Legierungen
CN113337883A (zh) * 2021-06-09 2021-09-03 广东民鑫机械设备科技有限公司 一种陶瓷生产工艺

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3086850A (en) * 1959-06-17 1963-04-23 Itt Method and means for growing and treating crystals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1131187B (de) * 1958-06-03 1962-06-14 Wacker Chemie Gmbh Verfahren zum Reinigen, Umkristallisieren und Formen von Metallen, Nichtmetallen undderen Verbindungen oder Legierungen
CN113337883A (zh) * 2021-06-09 2021-09-03 广东民鑫机械设备科技有限公司 一种陶瓷生产工艺

Also Published As

Publication number Publication date
FR1084879A (fr) 1955-01-25
NL88128C (enExample) 1958-05-16

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