GB715398A - Improvements in or relating to the manufacture of electrical amplifying devices - Google Patents

Improvements in or relating to the manufacture of electrical amplifying devices

Info

Publication number
GB715398A
GB715398A GB3048851A GB3048851A GB715398A GB 715398 A GB715398 A GB 715398A GB 3048851 A GB3048851 A GB 3048851A GB 3048851 A GB3048851 A GB 3048851A GB 715398 A GB715398 A GB 715398A
Authority
GB
United Kingdom
Prior art keywords
blocks
type
layer
metal
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3048851A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB3048851A priority Critical patent/GB715398A/en
Priority to CH310628D priority patent/CH310628A/en
Priority to FR1069750D priority patent/FR1069750A/en
Publication of GB715398A publication Critical patent/GB715398A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

715,398. Semi-conductive devices. GENERAL ELECTRIC CO., Ltd., DOUGLAS, R. W., and RYDE, J. W. Dec. 12, 1952, [Dec. 31, 1951.] No. 30488/51. Class 37. A semi-conductive amplifying device of the type comprising two blocks of material 1, 2 (Fig. 3) of arc conductivity type separated by material 3, 4 of the opposite conductivity type is manufactured by forming on the surface of one of the blocks a layer 3 of the opposite conductivity material bringing the two blocks into contact and heating them in an inert atmosphere while pressed together. The blocks i, 2 are of N-type germanium and the P-type layer is formed on the end of arc of the blocks by introducing a P-type impurity such as boron into the appropriate surface. Such a P-type layer may be formed on both blocks as shown-the drawings. Connections are made to blocks 1, 2 and the P-type layer by means of metal coatings 10, 11, 5 on the imposed surface. The coating may be made by plating, evaporation of metal or painting with metal paint. The completed amplifier may be embedded in a plastic housing.
GB3048851A 1951-12-31 1951-12-31 Improvements in or relating to the manufacture of electrical amplifying devices Expired GB715398A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB3048851A GB715398A (en) 1951-12-31 1951-12-31 Improvements in or relating to the manufacture of electrical amplifying devices
CH310628D CH310628A (en) 1951-12-31 1952-12-24 Method of manufacturing a transistor.
FR1069750D FR1069750A (en) 1951-12-31 1952-12-26 Electric amplification device and its manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3048851A GB715398A (en) 1951-12-31 1951-12-31 Improvements in or relating to the manufacture of electrical amplifying devices

Publications (1)

Publication Number Publication Date
GB715398A true GB715398A (en) 1954-09-15

Family

ID=10308460

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3048851A Expired GB715398A (en) 1951-12-31 1951-12-31 Improvements in or relating to the manufacture of electrical amplifying devices

Country Status (3)

Country Link
CH (1) CH310628A (en)
FR (1) FR1069750A (en)
GB (1) GB715398A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1184385A (en) * 1956-10-17 1959-07-21 Thomson Houston Comp Francaise New transistron with junctions and devices using them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure

Also Published As

Publication number Publication date
CH310628A (en) 1955-10-31
FR1069750A (en) 1954-07-12

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