JPS53139977A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53139977A
JPS53139977A JP5428577A JP5428577A JPS53139977A JP S53139977 A JPS53139977 A JP S53139977A JP 5428577 A JP5428577 A JP 5428577A JP 5428577 A JP5428577 A JP 5428577A JP S53139977 A JPS53139977 A JP S53139977A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
film
miniaturize
utilization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5428577A
Other languages
Japanese (ja)
Other versions
JPS6118861B2 (en
Inventor
Mitsumasa Koyanagi
Yuji Tanida
Shinpei Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5428577A priority Critical patent/JPS53139977A/en
Publication of JPS53139977A publication Critical patent/JPS53139977A/en
Publication of JPS6118861B2 publication Critical patent/JPS6118861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To miniaturize the element by covering the conductive electrodes formed through insulation film with a thick oxide film through the utilization of a Si3N4 film formed by heating a Si substrate at above 1 atmospheric pressure in an atmosphere containing N2, and forming connection holes through self-alignment.
JP5428577A 1977-05-13 1977-05-13 Production of semiconductor device Granted JPS53139977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5428577A JPS53139977A (en) 1977-05-13 1977-05-13 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5428577A JPS53139977A (en) 1977-05-13 1977-05-13 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53139977A true JPS53139977A (en) 1978-12-06
JPS6118861B2 JPS6118861B2 (en) 1986-05-14

Family

ID=12966281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5428577A Granted JPS53139977A (en) 1977-05-13 1977-05-13 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53139977A (en)

Also Published As

Publication number Publication date
JPS6118861B2 (en) 1986-05-14

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