GB706858A - Production of semiconductive bodies - Google Patents

Production of semiconductive bodies

Info

Publication number
GB706858A
GB706858A GB13634/51A GB1363451A GB706858A GB 706858 A GB706858 A GB 706858A GB 13634/51 A GB13634/51 A GB 13634/51A GB 1363451 A GB1363451 A GB 1363451A GB 706858 A GB706858 A GB 706858A
Authority
GB
United Kingdom
Prior art keywords
molten
mass
germanium
reservoir
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13634/51A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority claimed from US239609A external-priority patent/US2656496A/en
Publication of GB706858A publication Critical patent/GB706858A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
GB13634/51A 1950-06-15 1951-06-08 Production of semiconductive bodies Expired GB706858A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US168184A US2727840A (en) 1950-06-15 1950-06-15 Methods of producing semiconductive bodies
US239609A US2656496A (en) 1951-07-31 1951-07-31 Semiconductor translating device

Publications (1)

Publication Number Publication Date
GB706858A true GB706858A (en) 1954-04-07

Family

ID=26863873

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13634/51A Expired GB706858A (en) 1950-06-15 1951-06-08 Production of semiconductive bodies

Country Status (6)

Country Link
US (1) US2727840A (enrdf_load_stackoverflow)
BE (1) BE503719A (enrdf_load_stackoverflow)
DE (1) DE944209C (enrdf_load_stackoverflow)
FR (1) FR1036842A (enrdf_load_stackoverflow)
GB (1) GB706858A (enrdf_load_stackoverflow)
NL (1) NL88324C (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
DE973231C (de) * 1953-01-20 1959-12-24 Telefunken Gmbh Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
US2851341A (en) * 1953-07-08 1958-09-09 Shirley I Weiss Method and equipment for growing crystals
DE1032852B (de) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Verfahren und Einrichtung zur Herstellung von Halbleiterkristallen nach dem Kristallziehverfahren aus der Schmelze
BE553173A (enrdf_load_stackoverflow) * 1954-05-10
US2950219A (en) * 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2935478A (en) * 1955-09-06 1960-05-03 Gen Electric Co Ltd Production of semi-conductor bodies
US2996918A (en) * 1955-12-27 1961-08-22 Ibm Junction transistor thermostat
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
NL218610A (enrdf_load_stackoverflow) * 1956-07-02
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
DE1077187B (de) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen
DE1130414B (de) * 1959-04-10 1962-05-30 Elektronik M B H Verfahren und Vorrichtung zum Ziehen von Einkristallen
DE1227874B (de) * 1959-04-10 1966-11-03 Itt Ind Ges Mit Beschraenkter Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen
DE1140547B (de) * 1959-04-27 1962-12-06 Siemens Ag Verfahren zum Herstellen von kristallinen Halbleiterkoerpern mit grosser Lebensdauer der Minoritaetstraeger
DE1191789B (de) * 1960-10-25 1965-04-29 Siemens Ag Verfahren zum Ziehen von vorzugsweise einkristallinen Halbleiterstaeben
DE2548046C3 (de) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Ziehen einkristalliner Siliciumstäbe
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
FR957542A (enrdf_load_stackoverflow) * 1941-04-04 1950-02-23
NL67322C (enrdf_load_stackoverflow) * 1941-12-19
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2505633A (en) * 1946-03-18 1950-04-25 Purdue Research Foundation Alloys of germanium and method of making same
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon

Also Published As

Publication number Publication date
BE503719A (enrdf_load_stackoverflow)
NL88324C (enrdf_load_stackoverflow)
FR1036842A (fr) 1953-09-11
DE944209C (de) 1956-06-07
US2727840A (en) 1955-12-20

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