GB700156A - Semiconducting crystal rectifier or amplifier and method of manufacturing it - Google Patents

Semiconducting crystal rectifier or amplifier and method of manufacturing it

Info

Publication number
GB700156A
GB700156A GB16256/52A GB1625652A GB700156A GB 700156 A GB700156 A GB 700156A GB 16256/52 A GB16256/52 A GB 16256/52A GB 1625652 A GB1625652 A GB 1625652A GB 700156 A GB700156 A GB 700156A
Authority
GB
United Kingdom
Prior art keywords
etching
germanium
die
silicon
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16256/52A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB700156A publication Critical patent/GB700156A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
GB16256/52A 1951-07-03 1952-06-27 Semiconducting crystal rectifier or amplifier and method of manufacturing it Expired GB700156A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE311394X 1951-07-03

Publications (1)

Publication Number Publication Date
GB700156A true GB700156A (en) 1953-11-25

Family

ID=6129531

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16256/52A Expired GB700156A (en) 1951-07-03 1952-06-27 Semiconducting crystal rectifier or amplifier and method of manufacturing it

Country Status (3)

Country Link
BE (1) BE512585A (enExample)
CH (1) CH311394A (enExample)
GB (1) GB700156A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027320B (de) * 1953-12-30 1958-04-03 Ibm Deutschland Spitzentransistor, dessen Halbleiteroberflaeche teilweise um einen geringen Dickenbetag abgetragen ist

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2927220A1 (de) * 1979-07-05 1981-01-15 Wacker Chemitronic Verfahren zur stapelfehlerinduzierenden oberflaechenzerstoerung von halbleiterscheiben

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027320B (de) * 1953-12-30 1958-04-03 Ibm Deutschland Spitzentransistor, dessen Halbleiteroberflaeche teilweise um einen geringen Dickenbetag abgetragen ist

Also Published As

Publication number Publication date
BE512585A (enExample)
CH311394A (de) 1955-11-30

Similar Documents

Publication Publication Date Title
GB1076440A (en) Isolation of semiconductor devices
JPS54110783A (en) Semiconductor substrate and its manufacture
GB852003A (en) Improvements relating to the production of wafers of semi-conductor material
GB1025984A (en) The production of a silicon body with a pn-junction in it
JPS5224478A (en) Semiconductor device manufacturing process
GB1190893A (en) A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
GB599341A (en) Improvements in electrical translating devices such as contact rectifiers
GB1096484A (en) Improvements in or relating to semiconductor circuits
GB700156A (en) Semiconducting crystal rectifier or amplifier and method of manufacturing it
GB1487201A (en) Method of manufacturing semi-conductor devices
GB1206371A (en) The etching of silicon semiconductor wafers and semiconductor devices incorporating such wafers
GB1031043A (en) Improvements in or relating to semi-conductor devices
GB1214238A (en) A process for manufacturing a semiconductor device
IE34051B1 (en) Method for use in subdividing semiconductor wafers
GB1211627A (en) Methods of manufacture of semiconductor elements and elements manufactured therby
US3759768A (en) Preferential etching of silicon
JPS554980A (en) Semicondutor device manufacturing method
GB958247A (en) Semiconductor devices and methods of fabricating same
JPS5346270A (en) Production of semiconductor device
US2702361A (en) Semiconductor rectifier or amplifier of any desired surface profile
JPS5244175A (en) Method of flat etching of silicon substrate
GB1297235A (enExample)
JPS5236983A (en) Mos type semiconductor integrated circuit device and process for produ ction of same
GB985450A (en) Semi-conductor devices
JPS51126069A (en) Surface treatment equipment of semi-conductor weber