GB594959A - Improvements in asymmetrically conducting electrical devices and methods of making them - Google Patents
Improvements in asymmetrically conducting electrical devices and methods of making themInfo
- Publication number
- GB594959A GB594959A GB19628/44A GB1962844A GB594959A GB 594959 A GB594959 A GB 594959A GB 19628/44 A GB19628/44 A GB 19628/44A GB 1962844 A GB1962844 A GB 1962844A GB 594959 A GB594959 A GB 594959A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- strip
- layer
- lead
- crust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12819—Group VB metal-base component
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US496416A US2438110A (en) | 1943-07-28 | 1943-07-28 | Electrical translating materials and devices and method of making them |
Publications (1)
Publication Number | Publication Date |
---|---|
GB594959A true GB594959A (en) | 1947-11-24 |
Family
ID=23972527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB19628/44A Expired GB594959A (en) | 1943-07-28 | 1944-10-11 | Improvements in asymmetrically conducting electrical devices and methods of making them |
Country Status (3)
Country | Link |
---|---|
US (1) | US2438110A (it) |
BE (1) | BE594959A (it) |
GB (1) | GB594959A (it) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE975925C (de) * | 1952-09-17 | 1962-12-13 | Siemens Ag | Verfahren zum Herstellen eines definierten, abgestuft verteilten Stoerstellengehaltes in einem Halbleiterkoerper |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL70486C (it) * | 1945-12-29 | |||
US2627600A (en) * | 1946-08-19 | 1953-02-03 | Robert H Rines | Method of and apparatus for producing visual likenesses with the aid of radio waves |
US2673311A (en) * | 1948-07-24 | 1954-03-23 | Sylvania Electric Prod | Crystal amplifier |
US2615965A (en) * | 1948-07-24 | 1952-10-28 | Sylvania Electric Prod | Crystal amplifier device |
US2642486A (en) * | 1948-08-25 | 1953-06-16 | Sylvania Electric Prod | Electrical crystal unit |
US2632042A (en) * | 1948-08-25 | 1953-03-17 | Sylvania Electric Prod | Electrical crystal unit |
US2626985A (en) * | 1948-08-25 | 1953-01-27 | Sylvania Electric Prod | Electrical crystal unit |
NL82014C (it) * | 1949-11-30 | |||
US2662984A (en) * | 1950-01-27 | 1953-12-15 | Gen Electric Co Ltd | Crystal contact device |
BE523522A (it) * | 1952-10-15 | |||
NL189769C (nl) * | 1953-12-30 | Amp Akzo Corp | Werkwijze voor het handhaven van badoplossingen voor het stroomloos afzetten van koper op substraatplaten in inrichtingen uit metaal. | |
NL130620C (it) * | 1954-05-18 | 1900-01-01 | ||
NL107361C (it) * | 1955-04-22 | 1900-01-01 | ||
US2964830A (en) * | 1957-01-31 | 1960-12-20 | Westinghouse Electric Corp | Silicon semiconductor devices |
US3051878A (en) * | 1957-05-02 | 1962-08-28 | Sarkes Tarzian | Semiconductor devices and method of manufacturing them |
US2937110A (en) * | 1958-07-17 | 1960-05-17 | Westinghouse Electric Corp | Protective treatment for semiconductor devices |
US3382054A (en) * | 1965-01-25 | 1968-05-07 | Texas Instruments Inc | Low melting point composite materials useful for brazing, soldering or the like |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB190806051A (en) * | 1907-03-26 | 1908-07-16 | Siemens Ag | An Improved Process for Hardening Tantalum. |
US925988A (en) * | 1908-03-20 | 1909-06-22 | Siemens Ag | Process of hardening tantalum. |
US1990277A (en) * | 1930-09-13 | 1935-02-05 | Feussner Otto | Metals of the platinum group and certain alloys |
-
0
- BE BE594959D patent/BE594959A/xx unknown
-
1943
- 1943-07-28 US US496416A patent/US2438110A/en not_active Expired - Lifetime
-
1944
- 1944-10-11 GB GB19628/44A patent/GB594959A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE975925C (de) * | 1952-09-17 | 1962-12-13 | Siemens Ag | Verfahren zum Herstellen eines definierten, abgestuft verteilten Stoerstellengehaltes in einem Halbleiterkoerper |
Also Published As
Publication number | Publication date |
---|---|
US2438110A (en) | 1948-03-23 |
BE594959A (it) |
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