GB275152A - Improvements relating to current rectifying devices - Google Patents

Improvements relating to current rectifying devices

Info

Publication number
GB275152A
GB275152A GB1726/27A GB172627A GB275152A GB 275152 A GB275152 A GB 275152A GB 1726/27 A GB1726/27 A GB 1726/27A GB 172627 A GB172627 A GB 172627A GB 275152 A GB275152 A GB 275152A
Authority
GB
United Kingdom
Prior art keywords
improvements relating
current rectifying
rectifying devices
ackerly
assignees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1726/27A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Westinghouse Brake and Saxby Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd, Westinghouse Brake and Saxby Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Publication of GB275152A publication Critical patent/GB275152A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164Oxidation and subsequent heat treatment of the foundation plate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02614Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

275,152. Westinghouse Brake & Saxby Signal Co., Ltd., (Assignees of Ackerly, D. G.). July 29, 1926, [Convention date]. Coating. - In manufacturing a rectifying element, a copper blank is oxidized to produce cuprous oxide.. and is then heated in an atmosphere containing little or no oxygen to improve the crystal structure of the oxide layer. Both steps may be accomplished in the same furnace, a temperature in the neighbourhood of 1,000' C. being maintained. Specification 257,305 is referred to.
GB1726/27A 1926-07-29 1927-01-20 Improvements relating to current rectifying devices Expired GB275152A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US275152XA 1926-07-29 1926-07-29

Publications (1)

Publication Number Publication Date
GB275152A true GB275152A (en) 1928-04-20

Family

ID=21838156

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1726/27A Expired GB275152A (en) 1926-07-29 1927-01-20 Improvements relating to current rectifying devices

Country Status (2)

Country Link
DE (1) DE512818C (en)
GB (1) GB275152A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2825668A (en) * 1956-03-20 1958-03-04 Jack F Koons Jr Process of making a plate oxide rectifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2825668A (en) * 1956-03-20 1958-03-04 Jack F Koons Jr Process of making a plate oxide rectifier

Also Published As

Publication number Publication date
DE512818C (en) 1930-11-18

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