GB2569497B - A power MOSFET with an integrated Schottky diode - Google Patents

A power MOSFET with an integrated Schottky diode Download PDF

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Publication number
GB2569497B
GB2569497B GB1905012.9A GB201905012A GB2569497B GB 2569497 B GB2569497 B GB 2569497B GB 201905012 A GB201905012 A GB 201905012A GB 2569497 B GB2569497 B GB 2569497B
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United Kingdom
Prior art keywords
schottky diode
power mosfet
integrated schottky
integrated
mosfet
Prior art date
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Active
Application number
GB1905012.9A
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English (en)
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GB2569497A (en
GB201905012D0 (en
Inventor
Jiang Huaping
Ke Maolong
Deviny Ian
Wei Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuzhou CRRC Times Electric Co Ltd
Dynex Semiconductor Ltd
Original Assignee
Zhuzhou CRRC Times Electric Co Ltd
Dynex Semiconductor Ltd
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Application filed by Zhuzhou CRRC Times Electric Co Ltd, Dynex Semiconductor Ltd filed Critical Zhuzhou CRRC Times Electric Co Ltd
Publication of GB201905012D0 publication Critical patent/GB201905012D0/en
Publication of GB2569497A publication Critical patent/GB2569497A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB1905012.9A 2016-09-23 2016-09-23 A power MOSFET with an integrated Schottky diode Active GB2569497B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/GB2016/052966 WO2018055318A1 (fr) 2016-09-23 2016-09-23 Mosfet de puissance à diode schottky intégrée

Publications (3)

Publication Number Publication Date
GB201905012D0 GB201905012D0 (en) 2019-05-22
GB2569497A GB2569497A (en) 2019-06-19
GB2569497B true GB2569497B (en) 2021-09-29

Family

ID=57068150

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1905012.9A Active GB2569497B (en) 2016-09-23 2016-09-23 A power MOSFET with an integrated Schottky diode

Country Status (2)

Country Link
GB (1) GB2569497B (fr)
WO (1) WO2018055318A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10679984B2 (en) * 2018-07-10 2020-06-09 Sanken Electric Co., Ltd. Semiconductor device and method for forming the semiconductor device
CN111933711B (zh) * 2020-08-18 2022-08-23 电子科技大学 一种集成sbd的超结mosfet
CN116072732A (zh) * 2021-02-25 2023-05-05 湖南三安半导体有限责任公司 集成肖特基二极管的碳化硅mosfet器件
CN113745316A (zh) * 2021-08-31 2021-12-03 深圳市威兆半导体有限公司 屏蔽栅mosfet器件、芯片和终端设备
CN117059672B (zh) * 2023-10-11 2024-01-23 通威微电子有限公司 一种集成sbd的半导体器件及其制作方法
CN117253923A (zh) * 2023-11-20 2023-12-19 深圳平创半导体有限公司 集成jbs的凸台分裂栅碳化硅mosfet及制备工艺
CN118136672A (zh) * 2024-04-30 2024-06-04 河北博威集成电路有限公司 集成sbd的碳化硅mosfet器件及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907169A (en) * 1997-04-18 1999-05-25 Megamos Corporation Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance
JP2000323488A (ja) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd ダイオードおよびその製造方法
US20070045727A1 (en) * 2005-08-25 2007-03-01 Masaki Shiraishi DMOSFET and planar type MOSFET
US20110227154A1 (en) * 2010-03-19 2011-09-22 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
EP1204145B1 (fr) * 2000-10-23 2011-12-28 Panasonic Corporation Élément semi-conducteur
US20120112266A1 (en) * 2010-11-10 2012-05-10 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
JP2015090883A (ja) * 2013-11-05 2015-05-11 住友電気工業株式会社 炭化珪素半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621107B2 (en) 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6979863B2 (en) 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907169A (en) * 1997-04-18 1999-05-25 Megamos Corporation Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance
JP2000323488A (ja) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd ダイオードおよびその製造方法
EP1204145B1 (fr) * 2000-10-23 2011-12-28 Panasonic Corporation Élément semi-conducteur
US20070045727A1 (en) * 2005-08-25 2007-03-01 Masaki Shiraishi DMOSFET and planar type MOSFET
US20110227154A1 (en) * 2010-03-19 2011-09-22 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20120112266A1 (en) * 2010-11-10 2012-05-10 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
JP2015090883A (ja) * 2013-11-05 2015-05-11 住友電気工業株式会社 炭化珪素半導体装置

Also Published As

Publication number Publication date
GB2569497A (en) 2019-06-19
WO2018055318A1 (fr) 2018-03-29
GB201905012D0 (en) 2019-05-22

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