GB2497040B - Nanostructure electrode for pseudocapacitive energy storage - Google Patents

Nanostructure electrode for pseudocapacitive energy storage

Info

Publication number
GB2497040B
GB2497040B GB1304363.3A GB201304363A GB2497040B GB 2497040 B GB2497040 B GB 2497040B GB 201304363 A GB201304363 A GB 201304363A GB 2497040 B GB2497040 B GB 2497040B
Authority
GB
United Kingdom
Prior art keywords
energy storage
nanostructure electrode
pseudocapacitive
pseudocapacitive energy
nanostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1304363.3A
Other languages
English (en)
Other versions
GB2497040A (en
GB201304363D0 (en
Inventor
Richard A Haight
Stephen M Rossnagel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB201304363D0 publication Critical patent/GB201304363D0/en
Publication of GB2497040A publication Critical patent/GB2497040A/en
Application granted granted Critical
Publication of GB2497040B publication Critical patent/GB2497040B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/46—Metal oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
GB1304363.3A 2010-09-07 2011-07-20 Nanostructure electrode for pseudocapacitive energy storage Expired - Fee Related GB2497040B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/876,441 US8599533B2 (en) 2010-09-07 2010-09-07 Nanostructure electrode for pseudocapacitive energy storage
PCT/US2011/044643 WO2012033570A1 (en) 2010-09-07 2011-07-20 Nanostructure electrode for pseudocapacitive energy storage

Publications (3)

Publication Number Publication Date
GB201304363D0 GB201304363D0 (en) 2013-04-24
GB2497040A GB2497040A (en) 2013-05-29
GB2497040B true GB2497040B (en) 2014-06-18

Family

ID=45770566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1304363.3A Expired - Fee Related GB2497040B (en) 2010-09-07 2011-07-20 Nanostructure electrode for pseudocapacitive energy storage

Country Status (8)

Country Link
US (1) US8599533B2 (OSRAM)
JP (1) JP5629381B2 (OSRAM)
CN (1) CN103098160B (OSRAM)
DE (1) DE112011102970T5 (OSRAM)
GB (1) GB2497040B (OSRAM)
RU (1) RU2521083C2 (OSRAM)
TW (1) TWI497547B (OSRAM)
WO (1) WO2012033570A1 (OSRAM)

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WO2012128763A1 (en) * 2011-03-23 2012-09-27 Empire Technology Development Llc Capacitor with parallel nanotubes
WO2013048465A1 (en) 2011-09-30 2013-04-04 Intel Corporation Method of increasing an energy density and an achievable power output of an energy storage device
US9396883B2 (en) * 2013-04-26 2016-07-19 Intel Corporation Faradaic energy storage device structures and associated techniques and configurations
CA2851434A1 (en) 2013-05-03 2014-11-03 The Governors Of The University Of Alberta Carbon nanosheets
US10090376B2 (en) * 2013-10-29 2018-10-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and methods of forming capacitor structures
CA2937819A1 (en) * 2014-01-23 2015-07-30 The Regents Of The University Of California Fabrication of enhanced supercapacitors using atomic layer deposition of metal oxide on nanostructures
CN106252071B (zh) * 2016-08-05 2018-04-03 南京理工大学 一种高比容量纳米电介质电容器及其制备方法
CN106449158B (zh) * 2016-09-12 2018-07-17 武汉理工大学 钛基底上镍锰复合氧化物纳米菱柱阵列电极及其制备方法
JP2017130669A (ja) * 2017-02-27 2017-07-27 インテル コーポレイション エネルギー貯蔵デバイスのエネルギー密度及び達成可能な電力出力を増やす方法
RU2678055C2 (ru) * 2017-07-14 2019-01-22 ООО "Нелан-оксид плюс" Способ получения эластичной алюмооксидной наномембраны
CN108133838B (zh) * 2017-12-21 2019-09-17 北京理工大学 一种基于飞秒激光复合阳极氧化制备赝电容电极的方法
EP3570307A1 (en) * 2018-05-18 2019-11-20 Murata Manufacturing Co., Ltd. Integrated energy storage component
RU2716700C1 (ru) * 2019-08-28 2020-03-16 Акционерное общество "Концерн "Созвездие" Способ модификации поверхности фольги для электролитических конденсаторов
CN114744211B (zh) * 2022-05-13 2024-03-29 南京邮电大学 一种超分支氧化的多孔金属负极集流体及其制备方法

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US20050142898A1 (en) * 2003-12-30 2005-06-30 Hyundai Motor Company Method for manufacturing a nano-structured electrode of metal oxide
US20070045692A1 (en) * 2005-08-31 2007-03-01 Samsung Electronics Co., Ltd. Nonvolatile memory devices and methods of manufacturing the same
WO2007125282A2 (en) * 2006-04-21 2007-11-08 Imperial Innovations Limited Energy storage device
US20080316677A1 (en) * 2005-01-25 2008-12-25 Naturalnano Research, Inc. Ultracapacitors comprised of mineral microtubules
US20090142666A1 (en) * 2005-10-27 2009-06-04 Hae Jin Kim Methods for Manufacturing Manganese Oxide Nanotubes or Nanorods by Anodic Aluminum Oxide Template
US7623340B1 (en) * 2006-08-07 2009-11-24 Nanotek Instruments, Inc. Nano-scaled graphene plate nanocomposites for supercapacitor electrodes

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US2800616A (en) 1954-04-14 1957-07-23 Gen Electric Low voltage electrolytic capacitor
US3652902A (en) * 1969-06-30 1972-03-28 Ibm Electrochemical double layer capacitor
RU2123738C1 (ru) * 1997-03-21 1998-12-20 Воронежский государственный технический университет Пористое покрытие для модификации поверхности фольги электролитического конденсатора
US6359288B1 (en) 1997-04-24 2002-03-19 Massachusetts Institute Of Technology Nanowire arrays
US6205016B1 (en) 1997-06-04 2001-03-20 Hyperion Catalysis International, Inc. Fibril composite electrode for electrochemical capacitors
US6129901A (en) 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
KR100403611B1 (ko) * 2000-06-07 2003-11-01 삼성전자주식회사 금속-절연체-금속 구조의 커패시터 및 그 제조방법
JP4002829B2 (ja) 2000-09-06 2007-11-07 日立マクセル株式会社 電気化学素子用電極材料とその製造方法および電気化学素子
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JP2008192695A (ja) * 2007-02-01 2008-08-21 Matsushita Electric Ind Co Ltd 電極体、その製造方法及び電気二重層キャパシタ
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US20050142898A1 (en) * 2003-12-30 2005-06-30 Hyundai Motor Company Method for manufacturing a nano-structured electrode of metal oxide
US20080316677A1 (en) * 2005-01-25 2008-12-25 Naturalnano Research, Inc. Ultracapacitors comprised of mineral microtubules
US20070045692A1 (en) * 2005-08-31 2007-03-01 Samsung Electronics Co., Ltd. Nonvolatile memory devices and methods of manufacturing the same
US20090142666A1 (en) * 2005-10-27 2009-06-04 Hae Jin Kim Methods for Manufacturing Manganese Oxide Nanotubes or Nanorods by Anodic Aluminum Oxide Template
WO2007125282A2 (en) * 2006-04-21 2007-11-08 Imperial Innovations Limited Energy storage device
US7623340B1 (en) * 2006-08-07 2009-11-24 Nanotek Instruments, Inc. Nano-scaled graphene plate nanocomposites for supercapacitor electrodes

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Also Published As

Publication number Publication date
JP5629381B2 (ja) 2014-11-19
GB2497040A (en) 2013-05-29
GB201304363D0 (en) 2013-04-24
RU2012106418A (ru) 2013-10-27
US20120057273A1 (en) 2012-03-08
WO2012033570A1 (en) 2012-03-15
TWI497547B (zh) 2015-08-21
CN103098160A (zh) 2013-05-08
CN103098160B (zh) 2016-12-07
DE112011102970T5 (de) 2013-08-08
TW201243888A (en) 2012-11-01
US8599533B2 (en) 2013-12-03
RU2521083C2 (ru) 2014-06-27
JP2013541836A (ja) 2013-11-14

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20140730

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160720