GB2372635B - Method of fabricating group-III nitride semiconductor crystals. - Google Patents

Method of fabricating group-III nitride semiconductor crystals.

Info

Publication number
GB2372635B
GB2372635B GB0208076A GB0208076A GB2372635B GB 2372635 B GB2372635 B GB 2372635B GB 0208076 A GB0208076 A GB 0208076A GB 0208076 A GB0208076 A GB 0208076A GB 2372635 B GB2372635 B GB 2372635B
Authority
GB
United Kingdom
Prior art keywords
nitride semiconductor
iii nitride
group
semiconductor crystals
fabricating group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0208076A
Other languages
English (en)
Other versions
GB2372635A (en
GB0208076D0 (en
Inventor
Yasuhito Urashima
Mineo Okuyama
Tetsuo Sakurai
Hisayuki Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of GB0208076D0 publication Critical patent/GB0208076D0/en
Publication of GB2372635A publication Critical patent/GB2372635A/en
Application granted granted Critical
Publication of GB2372635B publication Critical patent/GB2372635B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
GB0208076A 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals. Expired - Fee Related GB2372635B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000248106 2000-08-18
JP2000252067 2000-08-23
US25489500P 2000-12-13 2000-12-13
US25489800P 2000-12-13 2000-12-13
JP2001016636 2001-01-25
US26985201P 2001-02-21 2001-02-21
JP2001048721 2001-02-23
US27611601P 2001-03-16 2001-03-16
PCT/JP2001/007080 WO2002017369A1 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device

Publications (3)

Publication Number Publication Date
GB0208076D0 GB0208076D0 (en) 2002-05-22
GB2372635A GB2372635A (en) 2002-08-28
GB2372635B true GB2372635B (en) 2005-01-19

Family

ID=27573712

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0208076A Expired - Fee Related GB2372635B (en) 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals.

Country Status (5)

Country Link
JP (1) JP3940673B2 (de)
AU (1) AU2001280097A1 (de)
DE (1) DE10196361B4 (de)
GB (1) GB2372635B (de)
WO (1) WO2002017369A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940673B2 (ja) * 2000-08-18 2007-07-04 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法
JP3768943B2 (ja) * 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
JP2004083316A (ja) * 2002-08-26 2004-03-18 Namiki Precision Jewel Co Ltd 単結晶サファイア基板および単結晶サファイア基板の作製方法ならびに液晶プロジェクタ装置
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
DE10335080A1 (de) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE10335081A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip
US7781795B2 (en) 2003-12-22 2010-08-24 Showa Denko K.K. Group III nitride semiconductor device and light-emitting device using the same
FI118196B (fi) * 2005-07-01 2007-08-15 Optogan Oy Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
KR100712753B1 (ko) * 2005-03-09 2007-04-30 주식회사 실트론 화합물 반도체 장치 및 그 제조방법
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
TWI360234B (en) * 2005-04-07 2012-03-11 Showa Denko Kk Production method of group iii nitride semiconduct
JP5131889B2 (ja) * 2005-12-06 2013-01-30 学校法人 名城大学 窒化物系化合物半導体素子の製造方法
KR100901822B1 (ko) * 2007-09-11 2009-06-09 주식회사 실트론 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법
JP5167974B2 (ja) * 2008-06-16 2013-03-21 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
CN105612276B (zh) * 2014-08-29 2017-02-01 创光科学株式会社 外延生长用模板以及其制作方法、和氮化物半导体装置
CN114050104B (zh) * 2021-11-12 2022-09-30 松山湖材料实验室 氮化铝单晶衬底的加工方法及紫外发光器件的制备方法

Citations (9)

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JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPS63239936A (ja) * 1987-03-27 1988-10-05 Canon Inc 多結晶薄膜半導体の形成方法
JPH05109621A (ja) * 1991-10-15 1993-04-30 Asahi Chem Ind Co Ltd 窒化ガリウム系薄膜の成長方法
JPH09134878A (ja) * 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
JPH10215035A (ja) * 1997-01-30 1998-08-11 Toshiba Corp 化合物半導体素子及びその製造方法
JPH11135832A (ja) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法
JPH11261169A (ja) * 1998-03-12 1999-09-24 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置
JP2000068559A (ja) * 1998-08-24 2000-03-03 Mitsubishi Cable Ind Ltd ＧａＮ系結晶基材およびその製造方法
JP2001057463A (ja) * 1999-06-07 2001-02-27 Sharp Corp 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法

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JPS50109621A (de) * 1974-02-04 1975-08-28
JP3940673B2 (ja) * 2000-08-18 2007-07-04 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPS63239936A (ja) * 1987-03-27 1988-10-05 Canon Inc 多結晶薄膜半導体の形成方法
JPH05109621A (ja) * 1991-10-15 1993-04-30 Asahi Chem Ind Co Ltd 窒化ガリウム系薄膜の成長方法
JPH09134878A (ja) * 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
JPH10215035A (ja) * 1997-01-30 1998-08-11 Toshiba Corp 化合物半導体素子及びその製造方法
JPH11135832A (ja) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法
JPH11261169A (ja) * 1998-03-12 1999-09-24 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置
JP2000068559A (ja) * 1998-08-24 2000-03-03 Mitsubishi Cable Ind Ltd ＧａＮ系結晶基材およびその製造方法
JP2001057463A (ja) * 1999-06-07 2001-02-27 Sharp Corp 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法

Also Published As

Publication number Publication date
GB2372635A (en) 2002-08-28
DE10196361T5 (de) 2005-05-25
JP3940673B2 (ja) 2007-07-04
WO2002017369A1 (en) 2002-02-28
GB0208076D0 (en) 2002-05-22
DE10196361B4 (de) 2008-01-03
JP2004507106A (ja) 2004-03-04
AU2001280097A1 (en) 2002-03-04

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