GB2352562B - Functional element for use in an electric, an electronic or an optical device and method for producing the same - Google Patents

Functional element for use in an electric, an electronic or an optical device and method for producing the same

Info

Publication number
GB2352562B
GB2352562B GB0023716A GB0023716A GB2352562B GB 2352562 B GB2352562 B GB 2352562B GB 0023716 A GB0023716 A GB 0023716A GB 0023716 A GB0023716 A GB 0023716A GB 2352562 B GB2352562 B GB 2352562B
Authority
GB
United Kingdom
Prior art keywords
producing
electronic
electric
same
optical device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0023716A
Other languages
English (en)
Other versions
GB2352562A (en
GB0023716D0 (en
Inventor
Hidetoshi Saito
Minoru Sato
Yoshikazu Ueda
Hideo Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Corp, Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Kasei Corp
Publication of GB0023716D0 publication Critical patent/GB0023716D0/en
Publication of GB2352562A publication Critical patent/GB2352562A/en
Application granted granted Critical
Publication of GB2352562B publication Critical patent/GB2352562B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
GB0023716A 1998-04-30 1999-03-24 Functional element for use in an electric, an electronic or an optical device and method for producing the same Expired - Fee Related GB2352562B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13430098 1998-04-30
JP28589298 1998-09-24
PCT/JP1999/001477 WO1999057345A1 (fr) 1998-04-30 1999-03-24 Element fonctionnel pour dispositif electrique, electronique ou optique, et son procede de production

Publications (3)

Publication Number Publication Date
GB0023716D0 GB0023716D0 (en) 2000-11-08
GB2352562A GB2352562A (en) 2001-01-31
GB2352562B true GB2352562B (en) 2003-10-08

Family

ID=26468428

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0023716A Expired - Fee Related GB2352562B (en) 1998-04-30 1999-03-24 Functional element for use in an electric, an electronic or an optical device and method for producing the same

Country Status (3)

Country Link
DE (1) DE19983159B4 (de)
GB (1) GB2352562B (de)
WO (1) WO1999057345A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4615656B2 (ja) * 2000-01-26 2011-01-19 雅介 高田 酸化亜鉛単結晶およびその製造方法
JP4615657B2 (ja) * 2000-01-26 2011-01-19 雅介 高田 酸化亜鉛単結晶およびその製造方法
JP2008098220A (ja) * 2006-10-06 2008-04-24 Asahi Kasei Corp 発光ダイオード
CN109225294B (zh) * 2017-07-11 2021-03-16 中国科学院上海硅酸盐研究所 一种绿色催化合成安息香的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225382A (ja) * 1988-03-04 1989-09-08 Matsushita Electric Ind Co Ltd 感圧素子
JPH02237070A (ja) * 1989-03-09 1990-09-19 Olympus Optical Co Ltd 電荷移動錯体層の形成方法
JPH05306200A (ja) * 1992-04-30 1993-11-19 Matsushita Electric Ind Co Ltd 微細構造の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316027C2 (de) * 1983-05-03 1987-01-22 Dornier System Gmbh, 7990 Friedrichshafen Photodetektor und Verfahren zu seiner Herstellung
US5362972A (en) * 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
US5336558A (en) * 1991-06-24 1994-08-09 Minnesota Mining And Manufacturing Company Composite article comprising oriented microstructures
JPH06252360A (ja) * 1993-03-02 1994-09-09 Hitachi Ltd 半導体装置及びその製造方法
US6036774A (en) * 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
JPH10225382A (ja) * 1997-02-13 1998-08-25 Tamio Arinaga 周回式焼き機

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225382A (ja) * 1988-03-04 1989-09-08 Matsushita Electric Ind Co Ltd 感圧素子
JPH02237070A (ja) * 1989-03-09 1990-09-19 Olympus Optical Co Ltd 電荷移動錯体層の形成方法
JPH05306200A (ja) * 1992-04-30 1993-11-19 Matsushita Electric Ind Co Ltd 微細構造の製造方法

Also Published As

Publication number Publication date
DE19983159B4 (de) 2006-06-14
GB2352562A (en) 2001-01-31
GB0023716D0 (en) 2000-11-08
WO1999057345A1 (fr) 1999-11-11
DE19983159T1 (de) 2002-03-14

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160324