DE19983159T1 - Funktionselement zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung und Verfahren zu dessen Herstellung - Google Patents
Funktionselement zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung und Verfahren zu dessen HerstellungInfo
- Publication number
- DE19983159T1 DE19983159T1 DE19983159T DE19983159T DE19983159T1 DE 19983159 T1 DE19983159 T1 DE 19983159T1 DE 19983159 T DE19983159 T DE 19983159T DE 19983159 T DE19983159 T DE 19983159T DE 19983159 T1 DE19983159 T1 DE 19983159T1
- Authority
- DE
- Germany
- Prior art keywords
- electronic
- electrical
- production
- optical device
- functional element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13430098 | 1998-04-30 | ||
JP10/134300 | 1998-04-30 | ||
JP28589298 | 1998-09-24 | ||
JP10/285892 | 1998-09-24 | ||
PCT/JP1999/001477 WO1999057345A1 (fr) | 1998-04-30 | 1999-03-24 | Element fonctionnel pour dispositif electrique, electronique ou optique, et son procede de production |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19983159T1 true DE19983159T1 (de) | 2002-03-14 |
DE19983159B4 DE19983159B4 (de) | 2006-06-14 |
Family
ID=26468428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19983159T Expired - Fee Related DE19983159B4 (de) | 1998-04-30 | 1999-03-24 | Verfahren zur Herstellung eines Funktionselementes zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE19983159B4 (de) |
GB (1) | GB2352562B (de) |
WO (1) | WO1999057345A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4615656B2 (ja) * | 2000-01-26 | 2011-01-19 | 雅介 高田 | 酸化亜鉛単結晶およびその製造方法 |
JP4615657B2 (ja) * | 2000-01-26 | 2011-01-19 | 雅介 高田 | 酸化亜鉛単結晶およびその製造方法 |
JP2008098220A (ja) * | 2006-10-06 | 2008-04-24 | Asahi Kasei Corp | 発光ダイオード |
CN109225294B (zh) * | 2017-07-11 | 2021-03-16 | 中国科学院上海硅酸盐研究所 | 一种绿色催化合成安息香的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3316027A1 (de) * | 1983-05-03 | 1984-11-08 | Dornier System Gmbh, 7990 Friedrichshafen | Photodetektor |
JP2553613B2 (ja) * | 1988-03-04 | 1996-11-13 | 松下電器産業株式会社 | 感圧素子 |
JPH02237070A (ja) * | 1989-03-09 | 1990-09-19 | Olympus Optical Co Ltd | 電荷移動錯体層の形成方法 |
US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
US5336558A (en) * | 1991-06-24 | 1994-08-09 | Minnesota Mining And Manufacturing Company | Composite article comprising oriented microstructures |
JP2697474B2 (ja) * | 1992-04-30 | 1998-01-14 | 松下電器産業株式会社 | 微細構造の製造方法 |
JPH06252360A (ja) * | 1993-03-02 | 1994-09-09 | Hitachi Ltd | 半導体装置及びその製造方法 |
US6036774A (en) * | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
RU2099808C1 (ru) * | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
JPH10225382A (ja) * | 1997-02-13 | 1998-08-25 | Tamio Arinaga | 周回式焼き機 |
-
1999
- 1999-03-24 GB GB0023716A patent/GB2352562B/en not_active Expired - Fee Related
- 1999-03-24 WO PCT/JP1999/001477 patent/WO1999057345A1/ja active Application Filing
- 1999-03-24 DE DE19983159T patent/DE19983159B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB0023716D0 (en) | 2000-11-08 |
DE19983159B4 (de) | 2006-06-14 |
WO1999057345A1 (fr) | 1999-11-11 |
GB2352562B (en) | 2003-10-08 |
GB2352562A (en) | 2001-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8607 | Notification of search results after publication | ||
8127 | New person/name/address of the applicant |
Owner name: SAITO, HIDETOSHI, NAGAOKA, NIIGATA, JP Owner name: ASAHI KASEI CHEMICALS CORPORATION, TOKIO/TOKYO, JP |
|
8127 | New person/name/address of the applicant |
Owner name: ASAHI KASEI KABUSHIKI KAISHA, OSAKA, JP Owner name: SAITO, HIDETOSHI, NAGAOKA, NIIGATA, JP |
|
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |