GB2331183A - Organic light emitting devices - Google Patents
Organic light emitting devices Download PDFInfo
- Publication number
- GB2331183A GB2331183A GB9824546A GB9824546A GB2331183A GB 2331183 A GB2331183 A GB 2331183A GB 9824546 A GB9824546 A GB 9824546A GB 9824546 A GB9824546 A GB 9824546A GB 2331183 A GB2331183 A GB 2331183A
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- United Kingdom
- Prior art keywords
- film
- anode
- metal film
- transparent conductive
- organic light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 abstract description 70
- 239000002184 metal Substances 0.000 abstract description 70
- 230000002093 peripheral effect Effects 0.000 abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 239000004411 aluminium Substances 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229920000307 polymer substrate Polymers 0.000 abstract description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 230000005525 hole transport Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229960003540 oxyquinoline Drugs 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- -1 aluminium tin oxide Chemical compound 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
- H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The device comprises a display area 1 connected via an area 2 to a peripheral drive circuit. The display area includes an organic film laminate 5 sandwiched between anodes 4 and cathodes 6 on a glass or polymer substrate 3. Each anode consists of a laminate of a transparent conductive film such as indium tin oxide and a metal film of molybdenum or aluminium. The anodes are connected to drive circuit electrodes via conductive adhesive. The perpendicularly arranged anodes and cathodes define picture elements which have low resistance connections to the peripheral drive circuit.
Description
2331183 AN ORGANIC LIGHT-EMITTING DEVICE The present invention relates to
an organic light-emitting device which can be driven by a low drive voltage and with low power consumption. The present invention relates also to an organic light-emitting device of flat panel display type, the illuminance distribution thereof is small.
The organic light-emitting device exhibits excellent visibility due to the self-light-emitting nature thereof and can be driven by a low drive voltage and with low power consumption. Due to these characteristic features, research and development of the organic light-emitting device have been conducted vigorously. Usually, the organic light-emitting device includes a transparent substrate, an anode including a transparent and electrically conductive film (hereinafter referred to as a "transparent conductive film") on the transparent substrate, a binary organic film laminate consisting of a hole transport layer and a light- emitting layer, and a cathode on the organic film laminate. Or, the organic light-emitting device includes a transparent substrate, an anode including a transparent conductive film on the transparent substrate, a ternary organic film laminate consisting of a hole transport layer, a light-emitting layer and an electron transport layer, and a cathode on the organic film laminate.
The mechanism for light emission from the organic light-emitting device has been considered as follows. An electron injected from the cathode and a hole injected from the anode recombine in the vicinity of the boundary between the hole transport layer and the light-emitting layer and an exciton is generated. Light is radiated during the radiative deactivation of the exciton. The light is radiated outside through the anode, that is a transparent conductive film, and the transparent substrate. The flat panel display devices which employ the organic light-emitting device include a passive-matrix-type (simple-matrix-type) one as shown in Figure 1.
Referring now to Figure 1, the device includes a display area 1, a connection area 2 and a not shown peripheral drive circuit. The display area includes a plurality of anodes 4, a plurality of cathodes 6 arranged perpendicularly to the anodes 4, and an organic film laminate 5 sandwiched by the anodes 4 and the cathodes 6. A unit area where one of the anodes 4 and one of the cathodes 6 cross each other forms one picture element. The connection area 2, to which the anodes 4 and the cathodes 6 are extended, is on the peripheral area of a substrate. A display device is constructed by connecting the display area 1 to the peripheral drive circuit via the connection area 2.
The electrode wiring length in the display area 1 is defined by the number of picture elements and the pitch between the picture elements and determined by the purpose for which the display device is used. The wiring length in the connection area is determined by the length necessary for connecting the peripheral drive circuit and the length of the portion for installing the parts necessary for shielding the organic light-emitting device from the air.
Usually, indium tin oxide (hereinafter referred to as "ITO") is used for the transparent conductive film of the anodes 4. The resistivity of ITO is about 1.5X10 -4 9 - cm and much higher than that of Al and such metallic materials for wiring.
In these days, the display devices tend to have a wider screen, a much finer the structure, and longer and finer wiring. Therefore, high wiring resistance of the anode is inevitably caused due to the combined adverse effects of the high resistivity of the transparent conductive film and the fine wiring.
When the wiring resistance of the anode is high, the voltage applied to each picture element changes greatly from picture element to picture element due to the voltage drop across the resistance. As the voltage applied to each picture element changes greatly from picture element to picture element, the illuminance of the light emitted from each picture element changes greatly from picture element to picture element. The illuminance differences between the picture elements cause an illuminance distribution across the display screen and cause poor visibility. The Japanese Unexamined Laid Open Patent Applications No. H04- 82197, No. H05-307997 and No, H06-5369 disclose the techniques for reducing the wiring resistance of the anode.
The Japanese Unexamined laid Open Patent Application No. H04-82197 describes that the resistance of a transparent electrode has been reduced by arranging a metal electrode in electrical contact with the transparent electrode. The patent publication No, H04-82197 discloses an embodiment in which the transparent electrode is Imm in width and the metal electrode arranged on the transparent electrode is 0.5 mm in width. The Japanese Unexamined laid Open Patent Application No. H05-307997 discloses a metal film interposed partially between an anode and a hole transport layer. The metal film has a smaller work function than that of the anode. The Japanese Unexamined Laid Open Patent Application No. H06-5369 discloses an anode consisting of a transparent first anode portion and a second anode portion contacting with the hole transport layer. The second anode portion has a larger work function than that of the first anode portion. The techniques disclosed in the patent publications No. H05- 307997 and No. H06-5369 reduce the respective anode resistance values by the respective structures which consider the characteristics of carrier injection from the metal film to the device and combine the metal film with the transparent conductive film into a unitary electrode.
However, the Japanese Unexamined laid Open Patent Application No. H0482197 describes nothing on the effects of reducing the wiring resistance of the transparent conductive film by the position and shape of the metal electrode. Although the materials and shapes for the metal electrode in the display area have been investigated in all the foregoing patent publications, nothing is described on the arrangement of the metal electrode in the connection area which is one of the important constituent elements of the anode. Thus, any anode which exhibits the functions required to the practical organic light-emitting device has not been realised yet.
In view of the foregoing, it is an object of the invention to provide an organic light-emitting device having an electrode structure which facilitates reducing the resistance in the connection area as well as the resistance in the display area and preventing the wiring resistance of the anode from increasing. It is another object of the invention to provide an organic light-emitting device including an anode which meets the requirements for the electrode dimensions in the practical display devices.
According to the invention, there is provided an organic light-emitting device which includes a plurality of anodes electrically connected to a peripheral drive circuit, the anodes working also as wiring; one or more cathodes electrically connected to the peripheral drive circuit, the cathodes working also as wiring; and an organic film laminate between the plurality of the anodes and the one or more cathodes; each of the anodes including a transparent conductive film and a plurality of metal film electrically connected to the transparent conductive film; the resistivity of the metal for the plurality of the metal film being smaller than the resistivity of the material for the transparent conductive film.
Advantageously, the metal film is extended from the connection portion thereof with the peripheral drive circuit to the display area of the organic light-emitting device.
Advantageously, the metal film is arranged such that at least the openings necessary for taking out the display light and the area for securing electrical insulation between the adjacent metal films are not covered with the metal film.
Now the present invention will be explained hereinafter with reference to the accompanied drawing figures in which:
Figure 1 is an isometric view of the passive-matrix-type display device which uses an organic light-emitting device; Figure 2(a) is a cross-section schematically showing an example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention; Figure 2(b) is another cross-section schematically showing another example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention; Figure 2(c) is a still another cross-section schematically showing still another example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention; Figure 2(d) is a further cross-section schematically showing a further example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention; Figure 3(a) is a top plan view of the transparent conductive film according to the invention; Figure 3(b) is a cross-section of the transparent conductive film according to the invention, the dimensions thereof are described in the figure; Figure 4(a) is a top plan view showing a pattern of the metal film according to the invention; Figure 4(b) is a cross-section of the anode in the display area according to the invention; Figure 5 is another top plan view showing another pattern of the metal film; -6 Figure 6 is still another top plan view showing still another pattern of the metal film; Figure 7(a) is a pair of curves for the device according to an embodiment of the invention and a comparative device relating the illuminance of the picture element farthest to the connection portion of the anode with the applied voltage; Figure 7(b) is a pair of curves for the device according to the embodiment of the invention and the comparative relating the current injected to the picture element farthest to the connection portion of the anode with the applied voltage; Figure 8 is a cross-section of the display area of the organic light- emitting device showing another anode structure according to the invention; Figure 9(a) is a pair of curves for the device according to another embodiment of the invention and another comparative device relating the illuminance of the picture element farthest to the connection portion of the anode with the applied voltage; Figure 9(b) is a pair of curves for the device according to the other embodiment of the invention and the other comparative device relating the current injected to the picture element farthest to the connection portion of the anode with the applied voltage; Figure 10 is a top plan view showing a shape of the metal film in the display area; and Figure 11 is another top plan view showing another shape of the metal film in the display area.
Figure 2(a) is a cross section schematically showing an example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention. Figure 2(b) is another cross-section schematically showing another example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention. Figure 2(c) is a still another cross-section schematically showing still another example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention. Figure 2(d) is a further cross-section schematically showing a further example of connections of the transparent conductive film, metal film and peripheral drive circuit in the organic light-emitting device according to the invention.
Referring now to Figure 2(a), an anode is formed by laminating a metal film 12 patterned on a transparent substrate 11 and a transparent conductive film 13 patterned on the metal film 12. The anode is connected to an electrode 15 of a peripheral drive circuit (hereinafter referred to simply as a Mrive circuit electrode") via an electrically conductive adhesive layer 14 such as an anisotropic electrically conductive tape (hereinafter referred to simply as an Manisotropic conductive tape"). The wiring resistance of the anode is reduced by extending the metal film to the area (hereinafter referred to simply as the "connection area") where the anode is connected with the drive circuit electrode 15.
When the metal film 12 is extending to the connection area of the drive circuit electrode 15, the dimensions of the transparent conductive film 13 does not affect greatly to the resistance of the anode. For example, the transparent conductive film 13 which is shorter than the metal film 12 as shown in Figure 2(b) or the transparent conductive film 13 which is not extended to the connection area affects extremely little the wiring resistance of the anode.
Although the anode including the metal film 12 and the transparent conductive film 13 is connected with the drive circuit electrode 15 via a conductive adhesive layer 14 in Figures 2(a) through 2(d), the conductive adhesive layer 14 is not always an indispensable feature according to the present invention.
Referring now to Figure 2(c), an anode is formed by laminating a transparent conductive film 13 patterned on a transparent substrate 11 and a metal film 12 patterned on the transparent conductive film 13. The anode is connected to a drive circuit electrode 15 via a conductive adhesive layer 14. The wiring resistance of the anode is reduced in the same manner as described above by extending the metal film 12 to the connection area of the of the drive circuit electrode 15. The dimensions of the transparent conductive film 13 in the connection area does not affect so much the wiring resistance of the anode. For example, the transparent conductive film 13 which is shorter than the metal film 12 as shown in Figure 2(d) or the transparent conductive film 13 which is not extended to the connection area affects extremely little the wiring resistance of the anode.
Figure 10 is a top plan view showing a shape of the metal film in the display area. Figure 11 is another top plan view showing another shape of the metal film in the display area.
Referring now to these figures, the metal film includes a connection portion 52, a display portion 51 and openings 53 in the display portion 51. The wiring resistance of the anode is reduced more by expanding the area of the display portion 51 of the metal film except for the openings 53 as widely as possible while leaving the area necessary for securing the insulation from the other anodes. The shapes preferable for reducing the wiring resistance of the anode are not always limited to those illustrated in Figures 10 and 11. The wiring resistance of the anode is reduced also by forming the metal film except the display portion 51 thereof as widely as possible as far as the connection with the peripheral drive circuit is not affected adversely.
-g- A glass substrate, a polymer substrate and such film-shaped substrates, and a colour filter and such organic films formed on a glass substrate may be used for the transparent substrate; Indium tin oxide (ITO), indium zinc oxide, tin oxide, zinc oxide and aluminium tin oxide may be used for the material of the transparent conductive film.
Mo and Al are used in the following embodiments of the invention for the metal film. Binary alloys such as Al-Ti, M-Cr, M-Mo, M-W, M-Ta, M-Cu and M-Nd, and ternary alloys may be also used for the metal film. It is preferable to select any arbitrary wiring stuff which facilitates reducing the wiring resistance of the anode greatly.
A laminate consisting of an ITO film and a Mo film is described as an example of the anode laminate in the following first embodiment, and a laminate consisting of an Al film and an indium zinc oxide film in the following second embodiment according to the invention. The other laminates such as a laminate consisting of a Mo film and an indium zinc oxide film may be also used. However, an anode laminate consisting of an ITO film and Al film on the underside of the ITO film is not referable, since hill rocks are caused when an A] film is formed on the underside of the ITO film and since the electric field in the device localises to the hill rocks. When an Al film is on an ITO film or on an indium zinc oxide film, the Al film is dissolved by the developing agent for the positivetype photoresist and the transparent conductive film is corroded. Therefore, it is difficult to manufacture the device which includes the anode consisting of a transparent conductive film and an Al film on the transparent conductive film.
The foregoing problems are avoided by further laminating a Mo film or a Ni film on the Al film of the unfavourable laminates described above.
Although the anode and the peripheral drive circuit are connected with each other in the following embodiments with an anisotropic conductive tape and an electrolytic copper foil on which Au-Ni layers are plated, the anode and the peripheral drive circuit may be connected by the other methods.
Although N,N'-dipheny]-N,N'-bis(3methylphenyl)-1,1'-biphenyl-4, 4'diamine and tris(8quinolinol)aluminium are used for the organic film laminate in the following embodiments, the organic materials for the organic film laminate are not always limited to those described above. For example, the organic materials used in the conventional organic lightemitting devices and their appropriate combinations may be also used.
Display panels were fabricated as the organic light-emitting devices according to the embodiments of the invention. The organic light-emitting devices included 960X240 picture elements aligned with a pitch of 11OX330 u m. The anodes were divided into an upper group and a lower group. The diagonal length of the display area was 5 inches.
An indium tin oxide (ITO) film of 100 nm in thickness was deposited by sputtering on a transparent glass substrate heated at 3000C. Then, a positive-type photoresist (OFPR-800 supplied from Tokyo Ma Kogyo Co., Ltd. ) was coated on the ITO film by spin-coating. The photoresist was exposed to light, and the pattern as shown in Figure 3(a) was developed with a developing agent (NMD-3 supplied from Tokyo Ma Kogyo Co., Ltd.). The pattern included a display area 96 p m in width and 42 mm in length and a connection area 70 p m in width and 13 mm in length. The length of the connection area included the length of the connection between the sealing portion and the peripheral drive circuit.
A transparent conductive film was formed by etching the ITO film with the patterned photoresist coated thereon with hydrochloric acid and by peeling off the photoresist. Figure 3(b) is a cross-section of the transparent conductive film, the dimensions thereof are described in the figure. It is possible to manufacture a device which prevents electric field localisation from causing by sharpening the angle @ of the edge portion, in contact with the transparent substrate 21, of the transparent conductive film 23. A sharper angle E) is more favourable also to prevent water and oxygen from coming into the device during the sealing process of the device.
Then, a Mo film of 200 nm in thickness was coated on the wafer, including the transparent substrate 21 and the transparent conductive film 23, by sputtering at the substrate temperature of 200C. A positive-type photoresist was coated on the Mo film by spin-coating and, then, exposed to light. Then, a pattern 1 as shown in Figure 4(a), a pattern 2 as shown in Figure 5 or a pattern 3 as shown in Figure 6 was developed with a developing agent. In these patterns, the width of the metal film was 16,p m in the display area.
Figure 4(a) is a top plan view showing a pattern (pattern 1) of the metal film according to the invention. In Figure 4(a), the metal film is disposed only in the display area. Figure 4(b) is a cross-section of the metal film. A part of a metal film 32 is on a transparent conductive film 33 formed on a transparent substrate 31 and the remaining part of the metal film 32 is on one side of the transparent conductive film 38.
In the pattern 2 of Figure 5, the metal film is shaped in the same manner with the metal film in the pattern 1 of Figure 4(a) in the display area. In the pattern 2, the width of the metal film, outside the display area, is wider than that of the metal film in the pattern 1.
In the pattern 3 shown in Figure 6, the metal film is extended to the area where the metal film is connected with the external signal lines.
Finally, a metal film was formed by etching the Mo film with a mixture of phosphoric acid, nitric acid and acetic add and by peeling off the photoresist.
The resistance between a connection portion and a picture element nearest to the connection portion and resistance between the connection portion and the picture element farthest to the connection portion were measured on the device Cl according to the comparative example 1 (which includes an anode consisting of a transparent conductive film) and on the devices E], E2 and E3 according to the first through third embodiments. Results are described in Table 1. A specimen for resistance measurement was prepared by connecting an electrolytic copper foil, on the surface thereof. Ni-Au layers had been plated, to the connection portion side of the anode with an anisotropic conductive tape (AC7201 supplied from Hitachi Chemical Co., Ltd.). Table 1 lists the resistance values obtained by measuring the resistance of the specimen prepared as described above and by subtracting the resistance values of the electrolytic copper foil and the anisotropic conductive tape from the measured resistance value of the specimen.
Table 1: Measured resistance values Resistance values between Resistance values between Anodes the connection portion the connection portion and the nearest picture and the farthest picture element element Cl An ITO film 6400 0 46350 11 El An ITO film 6400 0 7445 0 + pattern 1 E2 An ITO film 1455 0 4580 0 + pattern 2 E3 An ITO film 340 0 3465 0 + pattern 3 As Table 1 clearly indicates, the resistance between the picture elements is reduced greatly by the disposition of the metal film. It has been confirmed that the anode resistance is reduced more effectively as the position where the metal film is disposed is closer to the connection portion of the anode.
An organic film laminate including an organic hole transport layer which contains N,N'-diphenyl-N,N'-bis(3methylphenyl)-1,]'-biphenyl-4,4',diamine (TPD) and an organic light-emitting layer which contains tris-(8quinolinol)aluminium (Alq,) was formed on the wafer (E3) including a substrate, an ITO film on the substrate and a metal film shaped with the pattern 3 of Figure 6 on the ITO film. Aluminium cathodes were formed on the above described organic film laminate in perpendicular to the anodes.
Figure 7(a) is a pair of curves for the device E3 according to the third embodiment of the invention and the comparative device Cl relating the illuminance of the picture element farthest to the connection portion of the anode with the applied voltage. Figure 7(b) is a pair of curves for the device E3 and the comparative device Cl relating the current injected to the picture element farthest to the connection portion of the anode with the applied voltage. In these figures, the solid curves are for the organic light-emitting device E3 obtained as described above, and the dotted curves are for the comparative device Cl, the anode of which consists only of a transparent conductive film. The voltage at which light emission starts is not so different between the device E3 according to the invention and the comparative device Cl. However, the differences in the injected current and the illuminance keep expanding as the driving voltage increases, since the metal electrode added to the transparent conductive film reduces the voltage drop across the wiring resistance when a large current is made flow through the device.
An A] film of 200 nm in thickness was deposited by sputtering on a transparent glass substrate at room temperature. Then, a positive-type photoresist was coated on the Al film by spin-coating. The photoresist was exposed to light, and the pattern 1, 2 or 3 as shown in Figure 4(a), 5 or 6 was developed in the similar manner as in the first embodiment.
The A] film with the photoresist developed thereon was etched with a mixture of phosphoric acid, nitric acid and acetic acid, and then, the photoresist was peeled off.
An indium zinc oxide (IZO) film of 200 nm in thickness was deposited by sputtering at room temperature on the wafer with the metal film formed thereon. Then, a positive-type photoresist was coated on the IZO film by spin-coating. The photoresist was exposed to light, and the pattern as shown in Figure 3(a) was developed with a developing agent (NMD-3 supplied from Tokyo Ohka Kogyo Co., Ltd.). Then, a transparent conductive film was formed by etching the IZO film with the patterned photoresist coated thereon with oxalic add and by peeling off the photoresist.
Figure 8 is a cross-section of the display area of the organic lightemitting device showing another anode structure according to the invention. In Figure 8, the anode includes a metal film 42 on a transparent substrate 41 and a transparent conductive film 43, a part thereof is on the metal film 42 and the remaining part thereof is on the transparent substrate 41. It is possible to manufacture a device which prevents electric field localisation from causing by sharpening the angle 8 of the edge portion, in contact with the transparent substrate 41, of anode. A sharper angle 8 is more favourable to prevent water and oxygen from coming into the device during the sealing process of the device.
The resistance between a connection portion and a picture element nearest to the connection portion and resistance between the connection portion and the picture element farthest to the connection portion were measured in the same manner as described above on the device C2 according to the comparative example 2 (which includes an anode consisting of a transparent conductive film) and on the devices E4, ES and E3 according to the fourth through sixth embodiments. Results are described in Table 2.
Table 2: Measured resistance values Resistance values between Resistance values between Anodes the connection portion the connection portion and the nearest picture and the farthest picture element element C2 An IZO film 2905 0 21065 0 E4 An IZO film 2905 0 3955 0 + pattern 1 E5 An IZO film 625 0 1670 0 + pattern 2 E6 An IZO film 115 11 1162 0 + pattern 3 As Table 2 clearly indicates, the anode resistance is reduced more as the position where the metal film is disposed is closer to the connection portion of the anode. The anode laminate consisting of an A] film and an IZO film reduces the resistance more effectively than the anode laminate consisting of an ITO film and a Mo film presumably because the resistivity of Al is smaller than that of Mo.
An organic film laminate including an organic hole transport layer which contains N,N'-dipheny]-N,NI-bis(3methylphenyl)-1,1'-bipheny]-4,4'-diamine (TPD) and an organic light-emitting layer which contains tris(8quinolinol)aluminium (Alq3) was formed on the wafer (E6) including a substrate, a metal film shaped with the pattern 3 of Figure 6 on the substrate, and an IZO film on the metal film. Aluminium cathodes were formed on the above described organic film laminate in perpendicular to the anodes.
Figure 9(a) is a pair of curves for the device E6 according to the sixth embodiment of the invention and the comparative device C2 relating the illuminance of the picture element farthest to the connection portion of the anode with the applied voltage. Figure 9(b) is a pair of curves for the device E6 according to the sixth embodiment of the invention and the comparative device C2 relating the current injected to the picture elementfarthest to the connection portion of the anode with the applied voltage. In these figures, the solid curves are for the organic light- emitting device E6, and the dotted curves are for the comparative device C2, the anode of which consists only of a transparent conductive film. The effects of arranging a metal film are remarkable in the device of the sixth embodiment in the same manner as in the device of the third embodiment when a large current is made flow through the device.
The organic light-emitting device which includes an anode with low resistance according to the invention facilitates obtaining a wide display with very fine resolution and with uniform illuminance. The anode structure according to the invention meets the requirements for the electrode dimensions of the practical display devices.
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9307300A JPH11144877A (en) | 1997-11-10 | 1997-11-10 | Organic light emitting device |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| GB2331183A9 GB2331183A9 (en) | |
| GB9824546D0 GB9824546D0 (en) | 1999-01-06 |
| GB2331183A true GB2331183A (en) | 1999-05-12 |
| GB2331183B GB2331183B (en) | 2002-10-02 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9824546A Expired - Fee Related GB2331183B (en) | 1997-11-10 | 1998-11-09 | An organic light-emitting device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH11144877A (en) |
| GB (1) | GB2331183B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7423371B2 (en) | 1999-04-30 | 2008-09-09 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element and manufacturing method thereof |
| EP1566838A3 (en) * | 2004-02-20 | 2010-09-01 | LG Electronics, Inc. | Organic electro-luminescence display device and fabricating method thereof |
| DE102010061013A1 (en) * | 2010-12-03 | 2012-06-06 | Novaled Ag | Organic electro-optical device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4693262B2 (en) * | 2000-03-27 | 2011-06-01 | 株式会社半導体エネルギー研究所 | Passive matrix light emitting device |
| KR100474906B1 (en) * | 2002-06-07 | 2005-03-10 | 엘지전자 주식회사 | Active Matrix Organic Electro-Luminescence Device |
| JP4322538B2 (en) * | 2003-04-08 | 2009-09-02 | パイオニア株式会社 | Method for manufacturing light-emitting display panel |
| JP2007234819A (en) * | 2006-02-28 | 2007-09-13 | Optrex Corp | Organic electroluminescence display, and method for manufacturing organic electroluminescence display |
| JP2008262749A (en) * | 2007-04-10 | 2008-10-30 | Tdk Corp | El panel |
| JP5256868B2 (en) * | 2008-06-10 | 2013-08-07 | 日本精機株式会社 | Laminated body and organic EL panel |
| US9119272B2 (en) | 2010-12-24 | 2015-08-25 | Nec Lighting, Ltd. | Organic electroluminescent element and organic electroluminescent lighting device |
| US8766097B2 (en) | 2010-12-30 | 2014-07-01 | Lg Chem Ltd. | Electrode, and electronic device comprising same |
| CN107843806B (en) * | 2017-10-30 | 2020-08-28 | 阳光电源股份有限公司 | Wiring detection method and device and photovoltaic power generation system |
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| WO1993026139A2 (en) * | 1992-06-11 | 1993-12-23 | Westinghouse Electric Corporation | Low resistance, thermally stable electrode structure for electroluminescent displays |
| WO1994027418A1 (en) * | 1993-05-17 | 1994-11-24 | Westinghouse Electric Corporation | Color thin film electroluminescent display |
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| US7423371B2 (en) | 1999-04-30 | 2008-09-09 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element and manufacturing method thereof |
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| DE102010061013B4 (en) | 2010-12-03 | 2019-03-21 | Novaled Gmbh | Organic electro-optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9824546D0 (en) | 1999-01-06 |
| GB2331183B (en) | 2002-10-02 |
| GB2331183A9 (en) | |
| JPH11144877A (en) | 1999-05-28 |
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| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20101109 |