JPH06342692A - Organic thin film electroluminescent element - Google Patents

Organic thin film electroluminescent element

Info

Publication number
JPH06342692A
JPH06342692A JP5153007A JP15300793A JPH06342692A JP H06342692 A JPH06342692 A JP H06342692A JP 5153007 A JP5153007 A JP 5153007A JP 15300793 A JP15300793 A JP 15300793A JP H06342692 A JPH06342692 A JP H06342692A
Authority
JP
Japan
Prior art keywords
thin film
injection blocking
blocking layer
organic
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5153007A
Other languages
Japanese (ja)
Inventor
Hirota Sakon
洋太 左近
Kazukiyo Nagai
一清 永井
Chihaya Adachi
千波矢 安達
Nozomi Tamoto
望 田元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP5153007A priority Critical patent/JPH06342692A/en
Publication of JPH06342692A publication Critical patent/JPH06342692A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide the organic thin film electroluminescent element, which can restrict the rise of the driving voltage and the generation of unevenness of light emission and dark spot and of which pattern accuracy is improved an which can perform the display at a high quality and which can be manufactured easily. CONSTITUTION:An organic thin film electroluminescent element consists of a positive electrode 1, a negative electrode 2 and one or plural organic compound layers pinched between both the electrodes. A positive hole filling preventing layer 3 made of organic material is laminated so as to be overlapped with an edge of the positive electrode 1, which is in contact with the organic compound layer, and/or an electron filling preventing layer 4 made of organic material is laminated so as to be overlapped with an edge of the negative electrode 2, which is in contact with the organic compound layer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電界の印加によって発
光する、有機薄膜電界発光素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic thin film electroluminescent device which emits light when an electric field is applied.

【0002】[0002]

【従来の技術】電気信号に応答して多色表示するカラー
表示装置として、近年、完全固体型として高輝度の発光
が得られる有機薄膜電界発光素子が開発され、各種の表
示装置における発光素子として注目されている。有機薄
膜電界発光素子は、有機物質を原料としているため、そ
れを構成する材料も多種の材料から選択しうること、完
全固体型であるため耐衝撃性に優れていること、低電圧
の印加で発光しうること、高輝度高効率の発光が得られ
ること、更に、多色表示が可能である等、優れた特性を
有しており、それを構成する材料、構造等の研究が盛ん
に行なわれている。
2. Description of the Related Art In recent years, as a color display device for displaying multi-colors in response to an electric signal, an organic thin film electroluminescent device, which is a completely solid type and can obtain high-luminance light emission, has been recently developed and used as a light emitting device in various display devices. Attention has been paid. Since the organic thin film electroluminescent device is made of an organic substance as a raw material, the material constituting the organic thin film electroluminescent device can be selected from various materials, and since it is a completely solid type, it has excellent impact resistance, and can be applied with a low voltage. It has excellent properties such as the ability to emit light, the emission of light with high brightness and high efficiency, and the capability of multicolor display, and active research is being conducted on the materials and structures that make it up. Has been.

【0003】有機薄膜電界発光素子としては、その構造
として、陰極/発光層/正孔輸送層/陽極、陰極/電子
輸送層/発光層/陽極、陰極/電子輸送層/発光層/正
孔輸送層/陽極、等の構成のものが開発されている。具
体的には、例えば、透明基板上に、複数の透明陽極、必
要により正孔輸送層、発光層、必要により電子輸送層、
前記透明電極に交差する複数の背面陰極を、順に積層し
たものである。
The organic thin film electroluminescent device has a structure such as cathode / light emitting layer / hole transport layer / anode, cathode / electron transport layer / light emitting layer / anode, cathode / electron transport layer / light emitting layer / hole transport. Layer / anode, etc. configurations have been developed. Specifically, for example, on a transparent substrate, a plurality of transparent anodes, if necessary a hole transport layer, a light emitting layer, if necessary an electron transport layer,
A plurality of back cathodes intersecting the transparent electrode are laminated in order.

【0004】正孔輸送層は、陽極からの正孔を注入させ
易くする機能と、電子をブロックする機能とを有し、一
方電子輸送層は陰極からの電子を注入させ易くする機能
を有している。発光層において、一対の電極から注入さ
れた電子と正孔との再結合によって励起子が生じ、この
励起子が放射失活する過程で光を放ち、この光が透明電
極及び透明基板を介して外部に放出され、表示が可能と
なる。
The hole transport layer has a function of facilitating injection of holes from the anode and a function of blocking electrons, while the electron transport layer has a function of facilitating injection of electrons from the cathode. ing. In the light-emitting layer, excitons are generated by recombination of electrons and holes injected from the pair of electrodes, and the excitons emit light in the process of radiation deactivation, and the light passes through the transparent electrode and the transparent substrate. It is released to the outside and can be displayed.

【0005】このような有機薄膜電界発光素子におい
て、素子の高精細化のために電極パターンを微細化する
ことが望まれており、電極間に層間絶縁膜を形成し、発
光の均一性を保持し、パターン精度を向上させたものが
提案されている(特開平3−250583号)。また有
機化合物層と電極間に絶縁層を形成し、パターン精度及
び表示品質を向上させたものも提案されている(特開平
3−274694号)。更にまた、電極の縁部に絶縁層
を形成し、クロストークや発光のにじみを減少させたも
のも提案されている(特開平4−51494号)。
In such an organic thin film electroluminescent device, it is desired to miniaturize the electrode pattern in order to make the device finer, and an interlayer insulating film is formed between the electrodes to maintain the uniformity of light emission. However, a device having improved pattern accuracy has been proposed (Japanese Patent Laid-Open No. 3-250583). In addition, there is also proposed a structure in which an insulating layer is formed between an organic compound layer and an electrode to improve pattern accuracy and display quality (JP-A-3-274694). Furthermore, there has been proposed a structure in which an insulating layer is formed on the edge of the electrode to reduce crosstalk and bleeding of light emission (Japanese Patent Laid-Open No. 4-51494).

【0006】しかしながら、これらの有機薄膜電界発光
素子は、駆動電圧が高く、表示において発光むらがあ
り、また陰極縁部近傍の発光面に、耐久性低下の原因と
なる非発光部(ダークスポット)が多発し、更に、これ
ら有機薄膜電界発光素子を製造するに当たって、その作
製工程が非常に複雑であるという欠点がある。
However, these organic thin film electroluminescent devices have high driving voltage, uneven light emission in display, and a non-light emitting portion (dark spot) on the light emitting surface in the vicinity of the cathode edge, which causes deterioration of durability. However, there is a drawback that the manufacturing process is very complicated in manufacturing these organic thin film electroluminescent devices.

【0007】[0007]

【発明が解決しようとする課題】本発明は、前記従来の
有機薄膜電界発光素子の欠点を解消し、パターン精度を
向上させ、また駆動電圧の上昇を防止し、発光むら、ダ
ークスポットの発生のない、高品質の表示が可能であ
り、しかもその製造において複雑な工程を要しない有機
薄膜電界発光素子を提供することを目的とする。
DISCLOSURE OF THE INVENTION The present invention solves the drawbacks of the conventional organic thin film electroluminescent device, improves the pattern accuracy, prevents the driving voltage from rising, and prevents uneven light emission and dark spots. It is an object of the present invention to provide an organic thin-film electroluminescent device capable of high quality display without requiring complicated steps in its manufacture.

【0008】[0008]

【課題を解決するための手段】本発明によれば、陽極及
び陰極と、これらの間に狭持された一層または複数層の
有機化合物層より構成される有機薄膜電界発光素子にお
いて、少なくとも陽極の有機化合物層と接する側の縁部
に重なるように、有機物質よりなる正孔注入阻止層を積
層したことを特徴とする有機薄膜電界発光素子が提供さ
れる、また、陽極及び陰極と、これらの間に狭持させた
一層または複数層の有機化合物層より構成される有機薄
膜電界発光素子において、少なくとも陰極の有機化合物
層と接する側の縁部に重なるように、有機物質よりなる
電子注入阻止層を積層したことを特徴とする有機薄膜電
界発光素子が提供される、また、陽極及び陰極と、これ
らの間に狭持された一層または複数層の有機化合物層よ
り構成される有機薄膜電界発光素子において、陽極の有
機化合物層と接する側の縁部に重なるように有機物質よ
りなる正孔注入阻止層を積層し、かつ陰極の有機化合物
層と接する側の縁部に重なるように有機物質よりなる電
子注入阻止層を積層したことを特徴とする有機薄膜電界
発光素子が提供される、更に、前記陽極或いは陰極の有
機化合物層と接する側の縁部に重なるように積層された
正孔注入阻止層或いは電子注入阻止層の、陽極或いは陰
極との重なり部分の幅が、陽極或いは陰極の幅の10%
以上であることを特徴とする前記有機薄膜電界発光素子
が提供される、更にまた、前記正孔注入阻止層或いは前
記電子注入阻止層の薄膜が1000Å以下であることを
特徴とする前記有機薄膜電界発光素子が提供される。
According to the present invention, in an organic thin film electroluminescent device comprising an anode and a cathode and one or a plurality of organic compound layers sandwiched therebetween, at least the anode There is provided an organic thin film electroluminescent device characterized in that a hole injection blocking layer made of an organic substance is laminated so as to overlap an edge portion on the side in contact with an organic compound layer, and an anode and a cathode, and these In an organic thin film electroluminescent device composed of one or more organic compound layers sandwiched therebetween, an electron injection blocking layer made of an organic substance so as to overlap at least the edge of the cathode in contact with the organic compound layer. An organic thin-film electroluminescent device characterized by being laminated with an organic thin film electroluminescent device comprising an anode and a cathode and one or a plurality of organic compound layers sandwiched therebetween. In the film electroluminescent device, a hole injection blocking layer made of an organic material is laminated so as to overlap the edge of the anode in contact with the organic compound layer, and overlaps with the edge of the cathode in contact with the organic compound layer. There is provided an organic thin film electroluminescent device characterized by laminating an electron injection blocking layer made of an organic substance, and further, a positive electrode laminated so as to overlap with an edge of the anode or the cathode in contact with the organic compound layer. The width of the overlapping portion of the hole injection blocking layer or the electron injection blocking layer with the anode or the cathode is 10% of the width of the anode or the cathode.
The organic thin film electroluminescent device is provided as described above, and the thin film of the hole injection blocking layer or the electron injection blocking layer is 1000 Å or less. A light emitting device is provided.

【0009】本発明者等は、有機薄膜電界発光素子(以
下、単にEL素子と略称)の高精細化の為の電極パター
ンの微細化について鋭意検討を重ねた結果、陽極として
の透明電極は、金属電極に比べて電気抵抗が大きく、微
細パターン化による配線抵抗が増大し、そのため駆動電
圧増大、発光むらを引き起こすことに注目し、その抵抗
の増大を、非発光部を利用して減少させ得ること、また
耐久性低下の原因となる素子の発光面、特に陰極縁部の
近傍へのダークスポットの発生は、陰極の縁部を組成
的、型状的に均一性を高めることにより減少させ得るこ
とを見い出し、本発明を完成するに至った。
The inventors of the present invention have conducted extensive studies on the miniaturization of the electrode pattern for high definition of the organic thin film electroluminescent element (hereinafter simply referred to as EL element), and as a result, the transparent electrode as the anode is Note that the electrical resistance is higher than that of the metal electrode, and the wiring resistance due to fine patterning increases, which causes an increase in driving voltage and uneven light emission, and the increase in resistance can be reduced by utilizing the non-light emitting portion. In addition, the generation of dark spots on the light-emitting surface of the device, particularly the vicinity of the cathode edge, which causes deterioration of durability, can be reduced by enhancing the uniformity of the cathode edge in composition and shape. After finding out that, the present invention has been completed.

【0010】以下、本発明を図面に基づいて更に詳細に
説明する。図1、2、3は本発明のEL素子の陽極、陰
極、正孔注入阻止層、電子注入阻止層の構成を示したも
のである。これらの図面において、発光層、正孔輸送
層、電子輸送層は省略して示してある。
Hereinafter, the present invention will be described in more detail with reference to the drawings. 1, 2 and 3 show the structures of the anode, cathode, hole injection blocking layer and electron injection blocking layer of the EL device of the present invention. In these drawings, the light emitting layer, the hole transport layer, and the electron transport layer are omitted.

【0011】図1に示す本発明のEL素子の構成は、陽
極の縁部に重なる様に正孔注入阻止層を設けたものであ
るが、この構成により、陽極の抵抗を減少させることが
可能となる。即ち、陽極としての透明電極は、金属と比
べて抵抗が高く、パターンが微細になるに従い、駆動電
圧の上昇や発光むらを引き起こす原因となるが、本発明
のEL素子の如く、陽極間隔をせばめ、縁部に正孔注入
阻止層を積層することにより、非発光部の陽極部分を利
用して抵抗を減少させることができる。
The structure of the EL device of the present invention shown in FIG. 1 is such that the hole injection blocking layer is provided so as to overlap the edge portion of the anode. With this structure, the resistance of the anode can be reduced. Becomes That is, the transparent electrode as an anode has a higher resistance than a metal and causes a rise in driving voltage and uneven light emission as the pattern becomes finer. However, as in the EL element of the present invention, the anode spacing is narrowed. By stacking the hole injection blocking layer on the edge portion, the resistance can be reduced by utilizing the anode portion of the non-light emitting portion.

【0012】正孔注入阻止層を重ねる幅は、陽極の幅に
対して少なくとも1/10以上が抵抗減少に対して有効
である。また、正孔注入阻止層の膜厚は、その材料によ
って耐圧や正孔注入阻止能が異なり、必要な膜厚も異な
って来るが、少なくとも1000Åでなければその段差
部によって、後述するダークスポットの発生要因とな
る。
The width over which the hole injection blocking layer is overlapped is at least 1/10 of the width of the anode and is effective in reducing the resistance. Also, the film thickness of the hole injection blocking layer differs depending on the material, such as withstand voltage and hole injection blocking ability, and the required film thickness also differs. It becomes a generation factor.

【0013】更に、正孔注入阻止層に用いる材料として
は、正孔注入に対するエネルギーレベルから判断して適
当なものを使用できるが、その色が黒色に近いものを選
ぶことにより、非発光部を隠蔽でき表示品質を向上させ
ることもできる。具体的には、正孔注入阻止層に用いる
材料として、これまで電子輸送層材料として使用されて
きた従来公知の材料を用いることができ、例えば以下の
表1に示すオキサジアゾール誘導体を例として挙げるこ
とが出来る。
Further, as the material used for the hole injection blocking layer, an appropriate material can be used judging from the energy level for hole injection, but by selecting a material whose color is close to black, the non-light emitting portion can be formed. It can be hidden and the display quality can be improved. Specifically, as a material used for the hole injection blocking layer, a conventionally known material that has been used as an electron transport layer material can be used. For example, the oxadiazole derivative shown in Table 1 below is used as an example. I can name it.

【0014】[0014]

【表1】 [Table 1]

【0015】図2に示す本発明の別のEL素子の構成
は、陰極の縁部に重なる様に電子注入阻止層を設けたも
のであるが、この構成により劣化の原因であるダークス
ポットの影響を抑制することが可能となる。即ち、EL
素子の発光面に現われる非発光部であるダークスポット
は陰極の縁部に多く発生し、これは陰極の縁部における
組成的、形状的不均一性に起因すると考えられ、本発明
のEL素子の如く、陰極間隔をせばめ、縁部に電子注入
阻止層を積層することにより、前記ダークスポットの発
生を防止することができる。
The structure of another EL element of the present invention shown in FIG. 2 is such that an electron injection blocking layer is provided so as to overlap the edge portion of the cathode, but this structure has an effect of a dark spot which is a cause of deterioration. Can be suppressed. That is, EL
Dark spots, which are non-light emitting portions appearing on the light emitting surface of the device, are often generated at the edge of the cathode, which is considered to be due to compositional and shape nonuniformity at the edge of the cathode. In this way, the dark spots can be prevented by interposing the cathode spacing and stacking the electron injection blocking layer on the edge portion.

【0016】電子注入阻止層を重ねる幅は陰極の幅に対
して少なくとも1/10以上が、ダークスポットの回避
に対して有効である。また電子注入阻止層の膜厚は、そ
の材料によって耐圧や電子注入阻止能が異なり、必要な
膜厚も異ってくるが、少なくとも1000Å以下でなけ
れば、逆に段差部にダークスポットを発生する原因とな
る。
The overlapping width of the electron injection blocking layer is at least 1/10 or more of the width of the cathode, which is effective for avoiding dark spots. The film thickness of the electron injection blocking layer differs depending on the material, such as the withstand voltage and the electron injection blocking ability, and the required film thickness also differs, but if it is not less than 1000 Å or less, a dark spot is generated in the step portion. Cause.

【0017】電子注入阻止層に用いる材料は、電子注入
に対するエネルギーレベルから判断して適当なものを使
用できるが、その色が黒色に近いものを選ぶことにより
非発光部を隠蔽でき表示品質を向上させることもでき
る。具体的には、電子注入阻止層に用いる材料として、
これまで正孔輸送層材料として使用されてきた従来公知
の材料を用いることが出来、例えば以下の表2に示す誘
導体を例として挙げることが出来る。
As the material used for the electron injection blocking layer, an appropriate material can be used, judging from the energy level for electron injection, but by selecting a material whose color is close to black, the non-light emitting portion can be hidden and the display quality can be improved. You can also let it. Specifically, as a material used for the electron injection blocking layer,
Conventionally known materials that have been used as hole transport layer materials can be used, and the derivatives shown in Table 2 below can be given as examples.

【0018】[0018]

【表2】 [Table 2]

【0019】図3に示す本発明の更に別のEL素子の構
成は、陰極と陽極の両方の縁部に各々キャリア注入阻止
層を設けたものである。この構成により、前述した様な
配線抵抗の減少とダークスポットの抑制の両方に有効と
なり、非常に良好な電界発光素子を得ることができる。
The structure of yet another EL element of the present invention shown in FIG. 3 is such that a carrier injection blocking layer is provided on each of the edges of both the cathode and the anode. With this configuration, both the reduction of the wiring resistance and the suppression of the dark spot as described above are effective, and a very good electroluminescent device can be obtained.

【0020】尚、本発明では、基板、電極、発光層、キ
ャリア注入輸送層の材料構成は従来公知のものを適用で
きる。
In the present invention, conventionally known material constitutions can be applied to the substrate, the electrode, the light emitting layer and the carrier injecting and transporting layer.

【0021】本発明におけるEL素子の正孔注入阻止
層、電子注入阻止層は、素子の他の構成部分である発光
層、正孔輸送層、電子輸送層とその材料が実質的に同一
であるため、その製法として従来の真空蒸着法、溶液塗
布法等により所望の膜厚に薄膜化することができ、素子
の製造に関し何ら複雑な操作を必要とせず、製法上、極
めて有利である。
The hole injection blocking layer and the electron injection blocking layer of the EL device of the present invention are substantially the same in material as the light emitting layer, the hole transporting layer and the electron transporting layer which are the other constituent parts of the device. Therefore, as a manufacturing method thereof, a thin film having a desired film thickness can be formed by a conventional vacuum vapor deposition method, a solution coating method, or the like, and no complicated operation is required for manufacturing the element, which is extremely advantageous in the manufacturing method.

【0022】[0022]

【実施例】以下、実施例により本発明をさらに詳細に説
明する。
The present invention will be described in more detail with reference to the following examples.

【0023】実施例1 2mm幅、3.6mmピッチのITOより成る陽極パタ
ーンを有するガラス基板を用い、図1に示す様に、まず
正孔注入阻止層を、陽極との重なりが0.2mmとなる
様にパターン状に膜厚500Åで形成した。つづいて正
孔輸送層を500Å、発光層を500Å積層し、最後に
MgAg合金(MgAg=10:1)より成る陰極を同
じく2mm幅、3.6mmピッチで膜厚2000Åで積
層し、電界発光素子を作製した。正孔注入阻止層、発光
層の材料は下記構造式(化1)で表されるAlq3を、
正孔輸送層の材料は、下記構造式(化2)で表わされる
TPDを用いた。この様にして作製した素子を電源に接
続して駆動したところ、各発光部の輝度ばらつきは非常
に少なく、優れた素子であった。
Example 1 Using a glass substrate having an anode pattern made of ITO having a width of 2 mm and a pitch of 3.6 mm, as shown in FIG. 1, first, a hole injection blocking layer was formed so that the overlap with the anode was 0.2 mm. It was formed in a pattern with a film thickness of 500Å. Subsequently, a hole transport layer of 500 Å and a light emitting layer of 500 Å are laminated, and finally, a cathode made of an MgAg alloy (MgAg = 10: 1) is similarly laminated with a width of 2 mm and a pitch of 3.6 mm with a film thickness of 2000 Å. Was produced. The material for the hole injection blocking layer and the light emitting layer is Alq 3 represented by the following structural formula (Formula 1),
As the material of the hole transport layer, TPD represented by the following structural formula (Formula 2) was used. When the device manufactured in this manner was connected to a power source and driven, the brightness variation of each light emitting portion was very small and it was an excellent device.

【0023】[0023]

【化1】 [Chemical 1]

【化2】 [Chemical 2]

【0024】実施例2 実施例1で用いたものと同じ基板を用い、図2に示す様
にまず正孔輸送層TPD、発光層Alq3を各500Å
積層した。次に電子注入阻止層としてTPDを500
Å、2mm幅、3.6mmピッチで形成した。最後にM
gAg陰極2000Åを同じく2mm幅、3.6mmピ
ッチで、電子注入阻止層との重なりが0.2mmとなる
様に形成し、電界発光素子を作成した。尚、マスク蒸着
による場合には、本実施例の電子注入阻止層と陰極は同
じマスクを用い、その位置をずらせるだけで形成でき
る。この様にして作製した素子を電源に接続して駆動し
たところ、従来の発光部端部に多く存在したダークスポ
ットは認められず、優れた素子であった。
Example 2 Using the same substrate as that used in Example 1, first, as shown in FIG. 2, a hole transport layer TPD and a light emitting layer Alq 3 were each 500 Å.
Laminated. Next, 500 TPD is used as an electron injection blocking layer.
Å It was formed with a width of 2 mm and a pitch of 3.6 mm. Finally M
A gAg cathode 2000Å was similarly formed with a width of 2 mm and a pitch of 3.6 mm so that the overlap with the electron injection blocking layer would be 0.2 mm to prepare an electroluminescent device. In the case of mask vapor deposition, the electron injection blocking layer and the cathode of this embodiment can be formed by using the same mask and shifting their positions. When the device thus produced was connected to a power source and driven, no dark spots, which often existed at the end of the conventional light emitting portion, were observed, and the device was excellent.

【0025】実施例3 実施例1で用いたものと同じ基板を用い、図3に示す様
にまず正孔注入阻止層としてAlq3500Åを陽極と
の重なりが0.2mmとなる様にパターン状に形成し
た。次に、正孔輸送層TPD500Å、発光層Alq3
500Åを積層し、その上に電子注入阻止層としてTP
D500Åを2mm幅、3.6mmピッチで形成した。
最後にMgAg陰極2000Åを同じく2mm幅、3.
6mmピッチで電子注入阻止層との重なりが0.2mm
となる様に形成し電界発光素子を作製した。この様にし
て作製した素子を電源に接続して駆動したところ、各発
光部の輝度ばらつきは非常に少なく、かつ、ダークスポ
ットの非常に少ない優れた素子であった。
Example 3 Using the same substrate as used in Example 1, first, as shown in FIG. 3, Alq 3 500Å as a hole injection blocking layer was patterned so that the overlap with the anode was 0.2 mm. Formed. Next, the hole transport layer TPD500Å and the light emitting layer Alq 3
Laminate 500 Å, and TP as an electron injection blocking layer on top of it
D500Å was formed with a width of 2 mm and a pitch of 3.6 mm.
Finally, the MgAg cathode 2000 Å is also 2 mm wide, 3.
Overlapping with electron injection blocking layer is 0.2mm at 6mm pitch
And an electroluminescent device was manufactured. When the device manufactured in this manner was connected to a power source and driven, it was an excellent device in which there were very few variations in the brightness of each light emitting portion and very few dark spots.

【0026】比較例1 実施例1における正孔注入阻止層を次に述べるものとし
た以外は、実施例1と同様にして電界発光素子を作製し
た。すなわち、ITO陽極パターンを有するガラス基板
上にRFマグネトロンスパッタリングによりSiO2
を一様に形成した後、レジスト層を設けフォトリソグラ
フィによりパターニングし、つづいてエッチング処理を
施して実施例1における正孔注入阻止層と同様な形状の
絶縁層を形成した。この様にして作製した素子は、その
特性は実施例1とほぼ同じであったが、作製工程におい
て実施例1では新たな装置及び材料を必要としないのに
対して、本比較例はまったく逆でありその作製工程が非
常に複雑であった。
Comparative Example 1 An electroluminescent device was produced in the same manner as in Example 1 except that the hole injection blocking layer in Example 1 was changed to the following. That is, after uniformly forming a SiO 2 layer by RF magnetron sputtering on a glass substrate having an ITO anode pattern, a resist layer is provided and patterning is performed by photolithography, and then an etching process is performed to inject holes in Example 1. An insulating layer having the same shape as the blocking layer was formed. The characteristics of the element manufactured in this manner were almost the same as those of Example 1, but in the manufacturing process, Example 1 does not require a new apparatus and materials, whereas this Comparative Example is completely opposite. Therefore, the manufacturing process was very complicated.

【0027】比較例2 実施例2における電子注入阻止層を次に述べるものとし
た以外は、実施例2と同様にして電界発光素子を作製し
た。すなわち、実施例2における電子注入阻止層をSi
Oによる絶縁層とした。この時SiOによる絶縁層はマ
スク蒸着により実施例2における電子注入阻止層と同様
な形状として電界発光素子を作製した。この様にして作
製した素子を電源に接続して駆動したところ、発光部端
部にダークスポットを認められ、それらは経時的に増大
し耐久性に劣るものであった。
Comparative Example 2 An electroluminescent device was produced in the same manner as in Example 2 except that the electron injection blocking layer in Example 2 was changed to the following. That is, the electron injection blocking layer in Example 2 is made of Si.
The insulating layer was made of O. At this time, the insulating layer made of SiO had the same shape as the electron injection blocking layer in Example 2 by mask vapor deposition to fabricate an electroluminescence device. When the device produced in this manner was connected to a power source and driven, dark spots were observed at the end of the light emitting portion, which increased with time and were inferior in durability.

【0028】[0028]

【発明の効果】本発明のEL素子は、前記したように陽
極と陰極と、これらの間に狭持された一層または複数層
の有機化合物層より構成されるEL素子において、少な
くとも前記陽極の有機化合物層と接する側の縁部に重な
るように、有機物質よりなる正孔注入阻止層を積層した
ことにより、駆動電圧の上昇、発光むらの発生を抑制で
き、或いは、少なくとも前記陰極の有機化合物層と接す
る側の縁部に重なるように、有機物質よりなる電子注入
阻止層を積層したことにより、ダークスポットの発生を
抑制でき、しかもパターン精度を向上させた、高品質の
表示が可能な優れたEL素子である。また、本発明の正
孔注入阻止層及び電子注入阻止層を設けたEL素子は、
両方の効果を発揮し、極めて優れたものである。そして
その製造においても複雑な工程を必要とせず、製法上も
極めて有利なものである。
As described above, the EL element of the present invention is an EL element composed of an anode, a cathode, and one or more organic compound layers sandwiched therebetween, and at least the organic compound of the anode. By stacking a hole injection blocking layer made of an organic material so as to overlap the edge portion on the side in contact with the compound layer, it is possible to suppress an increase in driving voltage and uneven light emission, or at least an organic compound layer of the cathode. By stacking an electron injection blocking layer made of an organic material so that it overlaps with the edge on the side in contact with, it is possible to suppress the generation of dark spots, improve the pattern accuracy, and provide an excellent display of high quality. It is an EL element. Further, the EL device provided with the hole injection blocking layer and the electron injection blocking layer of the present invention,
It exhibits both effects and is extremely excellent. Also, the manufacturing process does not require complicated steps, and is extremely advantageous in terms of manufacturing method.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の正孔注入阻止層を設けた有機薄膜電界
発光素子の略図である。
FIG. 1 is a schematic view of an organic thin film electroluminescent device provided with a hole injection blocking layer of the present invention.

【図2】本発明の電子注入阻止層を設けた有機薄膜電界
発光素子の略図である。
FIG. 2 is a schematic view of an organic thin film electroluminescent device provided with an electron injection blocking layer of the present invention.

【図3】本発明の、正孔注入阻止層及び電子注入阻止層
を設けた有機薄膜電界発光素子の略図である。
FIG. 3 is a schematic view of an organic thin film electroluminescent device having a hole injection blocking layer and an electron injection blocking layer according to the present invention.

【符号の説明】[Explanation of symbols]

1…陽極 2…陰極 3…正孔注入阻止層 4…電子注入阻止層 DESCRIPTION OF SYMBOLS 1 ... Anode 2 ... Cathode 3 ... Hole injection blocking layer 4 ... Electron injection blocking layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 田元 望 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nozomi Tamoto 1-3-3 Nakamagome, Ota-ku, Tokyo Inside Ricoh Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 陽極及び陰極と、これらの間に狭持され
た一層または複数層の有機化合物層より構成される有機
薄膜電界発光素子において、少なくとも陽極の有機化合
物層と接する側の縁部に重なるように、有機物質よりな
る正孔注入阻止層を積層したことを特徴とする有機薄膜
電界発光素子。
1. An organic thin film electroluminescent device comprising an anode and a cathode, and one or a plurality of organic compound layers sandwiched between the anode and the cathode, and at least an edge portion of the anode in contact with the organic compound layer. An organic thin film electroluminescent device, characterized in that a hole injection blocking layer made of an organic material is laminated so as to overlap.
【請求項2】 陽極及び陰極と、これらの間に狭持させ
た一層または複数層の有機化合物層より構成される有機
薄膜電界発光素子において、少なくとも陰極の有機化合
物層と接する側の縁部に重なるように、有機物質よりな
る電子注入阻止層を積層したことを特徴とする有機薄膜
電界発光素子。
2. An organic thin film electroluminescent device comprising an anode and a cathode and one or a plurality of organic compound layers sandwiched therebetween, at least at the edge of the cathode which is in contact with the organic compound layer. An organic thin film electroluminescent device, characterized in that an electron injection blocking layer made of an organic material is laminated so as to overlap.
【請求項3】 陽極及び陰極と、これらの間に狭持され
た一層または複数層の有機化合物層より構成される有機
薄膜電界発光素子において、陽極の有機化合物層と接す
る側の縁部に重なるように有機物質よりなる正孔注入阻
止層を積層し、かつ陰極の有機化合物層と接する側の縁
部に重なるように有機物質よりなる電子注入阻止層を積
層したことを特徴とする有機薄膜電界発光素子。
3. In an organic thin film electroluminescent device comprising an anode and a cathode and one or more organic compound layers sandwiched between them, the organic thin film electroluminescent element overlaps with an edge of the anode in contact with the organic compound layer. The organic thin film electric field is characterized in that the hole injection blocking layer made of an organic substance is laminated as described above, and the electron injection blocking layer made of an organic substance is laminated so as to overlap the edge of the cathode in contact with the organic compound layer. Light emitting element.
【請求項4】 前記陽極或いは陰極の有機化合物層と接
する側の縁部に重なるように積層された正孔注入阻止層
或いは電子注入阻止層の、陽極或いは陰極との重なり部
分の幅が、陽極或いは陰極の幅の10%以上であること
を特徴とする請求項1、2又は3記載の有機薄膜電界発
光素子。
4. The width of the overlapping portion of the hole injection blocking layer or the electron injection blocking layer, which is laminated so as to overlap the edge portion of the anode or the cathode which is in contact with the organic compound layer, with the anode or the cathode. Alternatively, the width of the cathode is 10% or more, and the organic thin film electroluminescent element according to claim 1, 2 or 3.
【請求項5】 前記正孔注入阻止層或いは前記電子注入
阻止層の薄膜が1000Å以下であることを特徴とする
請求項1、2又は3記載の有機薄膜電界発光素子。
5. The organic thin film electroluminescent device according to claim 1, wherein the thin film of the hole injection blocking layer or the electron injection blocking layer is 1000 Å or less.
JP5153007A 1993-05-31 1993-05-31 Organic thin film electroluminescent element Pending JPH06342692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5153007A JPH06342692A (en) 1993-05-31 1993-05-31 Organic thin film electroluminescent element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5153007A JPH06342692A (en) 1993-05-31 1993-05-31 Organic thin film electroluminescent element

Publications (1)

Publication Number Publication Date
JPH06342692A true JPH06342692A (en) 1994-12-13

Family

ID=15552921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5153007A Pending JPH06342692A (en) 1993-05-31 1993-05-31 Organic thin film electroluminescent element

Country Status (1)

Country Link
JP (1) JPH06342692A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004387A (en) * 2008-09-05 2009-01-08 Sony Corp Organic el display, and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004387A (en) * 2008-09-05 2009-01-08 Sony Corp Organic el display, and manufacturing method thereof
JP4557069B2 (en) * 2008-09-05 2010-10-06 ソニー株式会社 Organic EL display and manufacturing method thereof

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