JP2824411B2 - Organic thin-film light emitting device - Google Patents
Organic thin-film light emitting deviceInfo
- Publication number
- JP2824411B2 JP2824411B2 JP7217130A JP21713095A JP2824411B2 JP 2824411 B2 JP2824411 B2 JP 2824411B2 JP 7217130 A JP7217130 A JP 7217130A JP 21713095 A JP21713095 A JP 21713095A JP 2824411 B2 JP2824411 B2 JP 2824411B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- emitting device
- thin film
- organic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 77
- 230000005525 hole transport Effects 0.000 claims description 35
- 150000002894 organic compounds Chemical class 0.000 claims description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 150000004706 metal oxides Chemical class 0.000 claims description 24
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 9
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 8
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 8
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 5
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 123
- 239000000758 substrate Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- -1 aromatic tertiary amine Chemical class 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical class C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は平面発光ディスプレ
イに用いる発光素子に関するものであり、特に発光物質
として蛍光性有機化合物を利用した有機薄膜発光素子の
改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device used for a flat light emitting display, and more particularly to an improvement in an organic thin film light emitting device using a fluorescent organic compound as a light emitting substance.
【０００２】[0002]
【従来の技術】近年、情報化社会の進歩に伴い、従来の
ＣＲＴよりも低消費電力でかつ薄型のディスプレイへの
ニーズが高まっている。この様なディスプレイとしては
液晶ディスプレイやプラズマディスプレイがあり、すで
に実用化されている。しかし、時代のニーズはさらに高
度化し、さらに低消費電力化、鮮明なフルカラー化が望
まれている。2. Description of the Related Art In recent years, with the progress of the information-oriented society, the need for a thinner display with lower power consumption than conventional CRTs has been increasing. Such displays include liquid crystal displays and plasma displays, which have already been put to practical use. However, the needs of the times have become more sophisticated, and further lower power consumption and clearer full color are desired.
【０００３】最近、それらのニーズを背景に、有機化合
物を利用した有機薄膜発光素子への期待が高まってい
る。これまでに報告されている素子の構造としては、陽
極および陰極の間に１層または複数層の有機化合物層が
挟まれた構造となっており、有機化合物層としては２層
構造あるいは３層構造がある。[0003] In recent years, with these needs in the background, expectations for an organic thin-film light-emitting device using an organic compound are increasing. The structure of the device reported so far has a structure in which one or more organic compound layers are sandwiched between an anode and a cathode, and the organic compound layer has a two-layer structure or a three-layer structure. There is.
【０００４】２層構造の例としては、陽極と陰極との間
に正孔輸送層と発光層が形成された構造（特開昭５９−
１９４３９３、Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５１，
９１３（１９８７））又は陽極と陰極との間に発光層と
電子輸送層とが形成された構造（ＵＳＰ Ｎｏ．５，０
８５９４７、特開平２−２５０９５２、Ａｐｐｌ．Ｐｈ
ｙｓ．Ｌｅｔｔ．５５．Ｐ１４８９（１９８９））があ
る。また、３層構造の例としては、陽極と陰極との間に
正孔輸送層と発光層と電子輸送層とが形成された構造
（Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５７，５３１（１９
９０））がある。また、単一層に全ての役割を持たせた
単層構造（Ｎａｔｕｒｅ，３４７，５３９（１９９
０）、Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．６１，７６１
（１９９２））も高分子や混合系で報告されている。こ
れらの素子構造が図６，７，８，９に示される。As an example of a two-layer structure, a structure in which a hole transport layer and a light emitting layer are formed between an anode and a cathode (Japanese Patent Laid-Open No.
194393, Appl. Phys. Lett. 51,
913 (1987)) or a structure in which a light emitting layer and an electron transporting layer are formed between an anode and a cathode (USP Nos. 5,0 and 0).
85947, JP-A-2-250952, Appl. Ph
ys. Lett. 55. P1489 (1989)). As an example of the three-layer structure, a structure in which a hole transport layer, a light emitting layer, and an electron transport layer are formed between an anode and a cathode (Appl. Phys. Lett. 57, 531 (19)
90)). Further, a single layer structure in which a single layer has all the functions (Nature, 347, 539 (199)
0), Appl. Phys. Lett. 61,761
(1992)) have also been reported for polymers and mixed systems. These element structures are shown in FIGS.
【０００５】図６には、基板１０上に設けられた陽極１
２と陰極１４との間に単一の有機化合物層である発光層
１６が形成された単層構造の例が示される。この場合の
発光層１６は、正孔輸送層及び電子輸送層の機能も果た
している。FIG. 6 shows an anode 1 provided on a substrate 10.
An example of a single-layer structure in which a light emitting layer 16 which is a single organic compound layer is formed between the cathode 2 and the cathode 14 is shown. In this case, the light emitting layer 16 also functions as a hole transport layer and an electron transport layer.
【０００６】図７には、基板１０上に設けられた陽極１
２と陰極１４との間に有機化合物層である発光層１６と
正孔輸送層１８とが形成された２層構造の例が示され
る。この場合の発光層１６は、電子輸送層の機能も果た
している。FIG. 7 shows an anode 1 provided on a substrate 10.
An example of a two-layer structure in which a light-emitting layer 16 and a hole transport layer 18 which are organic compound layers are formed between a cathode 2 and a cathode 14 is shown. In this case, the light emitting layer 16 also functions as an electron transport layer.
【０００７】図８には、基板１０上に設けられた陽極１
２と陰極１４との間に有機化合物層である発光層１６と
電子輸送層２０とが形成された２層構造の例が示され
る。この場合の発光層１６は、正孔輸送層の機能も果た
している。FIG. 8 shows an anode 1 provided on a substrate 10.
An example of a two-layer structure in which a light emitting layer 16 which is an organic compound layer and an electron transporting layer 20 are formed between a cathode 2 and a cathode 14 is shown. In this case, the light emitting layer 16 also functions as a hole transport layer.
【０００８】図９には、基板１０上に設けられた陽極１
２と陰極１４との間に有機化合物層である発光層１６と
正孔輸送層１８と電子輸送層２０とが形成された３層構
造の例が示される。FIG. 9 shows an anode 1 provided on a substrate 10.
An example of a three-layer structure in which a light-emitting layer 16, which is an organic compound layer, a hole transport layer 18, and an electron transport layer 20 are formed between the cathode 2 and the cathode 14 is shown.
【０００９】これら有機薄膜発光素子における発光メカ
ニズムは、陽極から注入された正孔と陰極から注入され
た電子とが、正孔輸送層１８あるいは電子輸送層２０を
介して発光層１６に到達し、そこで再結合することによ
って発光層１６を構成する有機化合物の励起状態を作り
出し、その励起状態が基底状態に戻るときに有機化合物
の蛍光と同じ波長の光を放出するというものである。The light emission mechanism of these organic thin film light emitting devices is such that holes injected from the anode and electrons injected from the cathode reach the light emitting layer 16 via the hole transport layer 18 or the electron transport layer 20, Then, by recombination, an excited state of the organic compound forming the light emitting layer 16 is created, and when the excited state returns to the ground state, light having the same wavelength as the fluorescence of the organic compound is emitted.
【００１０】発光層用材料として用いられる有機化合物
は強い蛍光性を示す材料である。上記正孔輸送層１８、
発光層１６、電子輸送層２０に使用可能な材料として
は、これまで様々な有機化合物が報告されている。たと
えば、正孔輸送層１８の材料としては、芳香族３級アミ
ンが報告されている。The organic compound used as the material for the light emitting layer is a material showing strong fluorescence. The hole transport layer 18,
Various organic compounds have been reported as materials that can be used for the light emitting layer 16 and the electron transport layer 20. For example, an aromatic tertiary amine has been reported as a material for the hole transport layer 18.
【００１１】また、発光層１６の材料としては、以下の
化学式で表されるアルミニウムトリスオキシン（特開昭
５９−１９４３９３、特開昭６３−２９５６９５）The material of the light emitting layer 16 is aluminum trisoxin represented by the following chemical formula (Japanese Patent Laid-Open Nos. 59-194393 and 63-295695).
【化１】 や、スチリルアミン誘導体、スチリルベンゼン誘導体
（特開平２−２０９９８８）が報告されている。Embedded image And styrylamine derivatives and styrylbenzene derivatives (JP-A-2-209988).
【００１２】また、電子輸送層２０の材料としては、オ
キサジアゾール誘導体等（Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔ
ｔ．６３，２０３２（１９９３））が報告されている。As the material of the electron transport layer 20, oxadiazole derivatives and the like (Appl. Phys. Let.
t. 63, 2032 (1993)).
【００１３】これら低分子量の化合物ばかりではなく、
高分子量の化合物でも多くの報告例があり、特にポリ
（Ｐ−フェニレンビニレン）系誘導体（Ｎａｔｕｒｅ，
３４７，５３９（１９９０））は、単層構造の素子でも
良好な特性が得られている。Not only these low molecular weight compounds,
There have been many reports of high molecular weight compounds, especially poly (P-phenylenevinylene) derivatives (Nature,
347, 539 (1990)), good characteristics are obtained even with an element having a single-layer structure.
【００１４】これらの材料を使用した有機薄膜発光素子
は、その発光色や明るさから見て、発光素子としての性
能は十分に実用レベルにある。The organic thin-film light-emitting device using these materials has a sufficiently practical performance as a light-emitting device in view of its light-emitting color and brightness.
【００１５】[0015]
【発明が解決しようとする課題】しかし、これら有機薄
膜発光素子は未だ実用に至っていない。その最大の原因
は素子の耐久性が乏しいことにある。However, these organic thin-film light-emitting devices have not been put to practical use yet. The biggest cause is that the durability of the element is poor.
【００１６】これまで、様々な素子構造および有機化合
物を採用することにより、初期的には数１０００ｃｄ／
ｍ2 の高輝度が直流電圧１０Ｖ程度で達成されている
が、連続駆動あるいは長期保存によって輝度の低下と駆
動電圧の上昇といった特性の劣化が起り、これが有機薄
膜発光素子の実用化を妨げている。この素子寿命を支配
している要因は幾つか報告されているが、従来は薄膜の
耐熱性がその主要因であると考えられていた。そのた
め、有機化合物層の膜構造を安定化させるために、熱安
定性に優れた、つまり軟化温度（Ｔｇ）や融点の高い有
機化合物の合成が試みられている（Ａｐｐｌ．Ｐｈｙ
ｓ．Ｌｅｔｔ．６１，２５０３（１９９２））。Hitherto, by adopting various device structures and organic compounds, initially several thousands cd /
Although a high luminance of m 2 has been achieved at a DC voltage of about 10 V, deterioration in characteristics such as a decrease in luminance and an increase in drive voltage due to continuous driving or long-term storage has occurred, which has hindered the practical use of organic thin-film light emitting devices. . Several factors governing the life of the element have been reported, but it has heretofore been considered that the heat resistance of the thin film is the main factor. Therefore, in order to stabilize the film structure of the organic compound layer, synthesis of an organic compound having excellent thermal stability, that is, an organic compound having a high softening temperature (Tg) and a high melting point has been attempted (Appl. Phy.
s. Lett. 61, 2503 (1992)).
【００１７】しかし最近、以下の化学式で表される芳香
族３級アミンのトリフェニルジアミン誘導体However, recently, a triphenyldiamine derivative of an aromatic tertiary amine represented by the following chemical formula:
【化２】 を中心にした系統的な実験から、素子の寿命はこれら軟
化温度や融点よりも正孔輸送層のイオン化ポテンシャル
に関係していることが報告されている（Ａｐｐｌ．Ｐｈ
ｙｓ．Ｌｅｔｔ．，６６，２６７９（１９９５））。こ
れは、陽極である酸化錫インジウム（ＩＴＯ）と正孔輸
送層のエネルギー障壁すなわちＩＴＯ電極のフェルミ準
位と正孔輸送層の最高占有準位のエネルギー差が小さい
ほど素子の寿命が長くなることを意味している。Embedded image It has been reported from a systematic experiment centered on that the lifetime of the device is more related to the ionization potential of the hole transport layer than to the softening temperature and the melting point (Appl. Ph.
ys. Lett. , 66, 2679 (1995)). This is because the lifetime of the device becomes longer as the energy barrier between indium tin oxide (ITO) as the anode and the hole transport layer, that is, the energy difference between the Fermi level of the ITO electrode and the highest occupied level of the hole transport layer becomes smaller. Means
【００１８】一般に、ＩＴＯ電極のフェルミ準位は４．
６ｅＶ（Ｎａｔｕｒｅ，Ｖｏｌ．３７０，３５４（１９
９４））であることが知られており、この値は仕事関数
に対応している。また、正孔輸送層に使用される代表的
なジアミン誘導体であるトリフェニルジアミン（ＴＰ
Ｄ）の最高占有準位は５．５ｅＶ（Ａｐｐｌ．Ｐｈｙ
ｓ．Ｌｅｔｔ．，６１，２５０３（１９９２））である
ことが知られており、この値はイオン化ポテンシャルに
対応している。Generally, the Fermi level of an ITO electrode is 4.
6 eV (Nature, Vol. 370, 354 (19)
94)), which corresponds to the work function. Further, triphenyldiamine (TP) which is a typical diamine derivative used for the hole transport layer is used.
D) has the highest occupied level of 5.5 eV (Appl.
s. Lett. , 61, 2503 (1992)), which corresponds to the ionization potential.
【００１９】上述のＴＰＤを正孔輸送層に使用する場
合、正孔キャリアにとってはＩＴＯ電極と正孔輸送層と
の間に約０．９ｅＶの障壁が存在することになる。この
エネルギー差が小さければ障壁部に無理な電圧がかかる
必要がなく、素子の発熱が抑えられる。多くのジアミン
誘導体でイオン化ポテンシャルの大きな材料の合成が試
みられているが、有機材料からのアプローチだけでは障
壁低減に限界がある。従って、電極材料を改良して、従
来のＩＴＯよりも仕事関数の大きな透明電極を開発する
ことが望まれている。When the above-mentioned TPD is used for the hole transport layer, a barrier of about 0.9 eV exists between the ITO electrode and the hole transport layer for the hole carrier. If this energy difference is small, it is not necessary to apply an excessive voltage to the barrier portion, and the heat generation of the element can be suppressed. Although synthesis of materials having a large ionization potential has been attempted with many diamine derivatives, there is a limit to barrier reduction only by an approach using an organic material. Therefore, it is desired to develop a transparent electrode having a larger work function than conventional ITO by improving the electrode material.
【００２０】尚、発光層が正孔輸送層の機能も果たして
いる型の素子の場合は、陽極と発光層との間のエネルギ
ー障壁が問題となる。例えば、イオン化ポテンシャルが
５．０ｅＶのポリ（Ｐ−フェニレンビニレン）の場合、
０．４ｅＶの障壁が存在することになる（Ｎａｔｕｒ
ｅ，３７０，３５４（１９９０））。In the case of a device in which the light emitting layer also functions as a hole transport layer, there is a problem of an energy barrier between the anode and the light emitting layer. For example, in the case of poly (P-phenylenevinylene) having an ionization potential of 5.0 eV,
There will be a 0.4 eV barrier (Natur
e, 370, 354 (1990)).
【００２１】本発明は上記従来の課題に鑑みなされたも
のであり、その目的は、仕事関数が従来の陽極材料であ
るＩＴＯよりも大きい金属酸化物薄膜を用いて正孔輸送
層あるいは発光層とのエネルギー障壁を低減させ、駆動
電圧が低下でき発光性能が長時間に亘って保持できる耐
久性に優れた有機薄膜発光素子を提供することにある。The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to use a metal oxide thin film having a work function larger than that of ITO, which is a conventional anode material, with a hole transport layer or a light emitting layer. It is an object of the present invention to provide an organic thin-film light-emitting device having excellent durability, which can reduce the energy barrier of the device, reduce the driving voltage, and maintain the light-emitting performance for a long time.
【００２２】[0022]
【課題を解決するための手段】上記目的を達成するため
に、請求項１記載の発明は、陽極および陰極と、これら
に挟まれた１層または複数層の有機化合物層より構成さ
れる有機薄膜発光素子において、前記陽極が、仕事関数
が酸化錫インジウム（ＩＴＯ）よりも大きな金属酸化物
薄膜からなることを特徴とする。In order to achieve the above object, the present invention is directed to an organic thin film comprising an anode, a cathode and one or more organic compound layers sandwiched between the anode and the cathode. In the light emitting device, the anode is made of a metal oxide thin film having a work function larger than that of indium tin oxide (ITO).
【００２３】請求項２記載の発明は、請求項１記載の有
機薄膜発光素子において、前記陽極を、膜厚５００オン
グストロームから２０００オングストロームの範囲のＩ
ＴＯ薄膜と５０オングストロームから３００オングスト
ロームの範囲の金属酸化物薄膜とにより２層構造とした
ことを特徴とする。According to a second aspect of the present invention, in the organic thin-film light-emitting device according to the first aspect, the anode is formed of an I thin film having a thickness of 500 Å to 2,000 Å.
It has a two-layer structure comprising a TO thin film and a metal oxide thin film in a range of 50 Å to 300 Å.
【００２４】請求項３記載の発明は、請求項１記載の有
機薄膜発光素子において、前記有機化合物層が発光層で
あることを特徴とする。According to a third aspect of the present invention, in the organic thin film light emitting device according to the first aspect, the organic compound layer is a light emitting layer.
【００２５】請求項４記載の発明は、請求項１記載の有
機薄膜発光素子において、前記有機化合物層が正孔輸送
層と発光層とからなることを特徴とする。According to a fourth aspect of the present invention, in the organic thin-film light emitting device according to the first aspect, the organic compound layer comprises a hole transport layer and a light emitting layer.
【００２６】請求項５記載の発明は、請求項１記載の有
機薄膜発光素子において、前記有機化合物層が発光層と
電子輸送層とからなることを特徴とする。According to a fifth aspect of the present invention, in the organic thin film light emitting device according to the first aspect, the organic compound layer comprises a light emitting layer and an electron transport layer.
【００２７】請求項６記載の発明は、請求項１記載の有
機薄膜発光素子において、前記有機化合物層が正孔輸送
層と発光層と電子輸送層とからなることを特徴とする。According to a sixth aspect of the present invention, in the organic thin film light emitting device according to the first aspect, the organic compound layer comprises a hole transport layer, a light emitting layer, and an electron transport layer.
【００２８】請求項７記載の発明は、請求項１記載の有
機薄膜発光素子において、前記金属酸化物は、酸化バナ
ジウム、酸化ルテニウム、酸化モリブデンなどの仕事関
数が４．６ｅＶよりも大きな酸化物であることを特徴と
する。According to a seventh aspect of the present invention, in the organic thin-film light emitting device according to the first aspect, the metal oxide is an oxide having a work function larger than 4.6 eV, such as vanadium oxide, ruthenium oxide, and molybdenum oxide. There is a feature.
【００２９】[0029]
【発明の実施の形態】以下、本発明の好適な実施の形態
を図面に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.
【００３０】図１には、本発明に係る有機薄膜発光素子
の断面図が示される。図１において、ガラス等の基板１
０の上に陽極１２が形成され、陽極１２の上にＴＰＤか
らなる正孔輸送層１８が形成され、正孔輸送層１８の上
にアルミキノリノール錯体（Ａｌｑ）からなる発光層１
６が形成され、発光層１６の上にＭｇＡｇ合金からなる
陰極１４が形成されている。FIG. 1 is a sectional view of an organic thin-film light emitting device according to the present invention. In FIG. 1, a substrate 1 such as glass
0, an anode 12 is formed on the anode 12, a hole transport layer 18 made of TPD is formed on the anode 12, and a light emitting layer 1 made of aluminum quinolinol complex (Alq) is formed on the hole transport layer 18.
6 is formed, and the cathode 14 made of the MgAg alloy is formed on the light emitting layer 16.
【００３１】陽極１２としては、従来の陽極材料である
ＩＴＯよりも仕事関数が大きく導電性が高い材料が使用
される。たとえば、ルテニウム酸化物（ＲｕＯx ）、モ
リブデン酸化物（ＭｏＯx ）、バナジウム酸化物（ＶＯ
x ）などが好ましい。As the anode 12, a material having a higher work function and higher conductivity than ITO, which is a conventional anode material, is used. For example, ruthenium oxide (RuO x ), molybdenum oxide (MoO x ), vanadium oxide (VO
x ) and the like are preferred.
【００３２】表１には、各金属酸化物薄膜の仕事関数の
例が示される。これらの値は、大気中紫外光電子分光法
で実測したものである。表１に示された金属酸化物薄膜
の仕事関数は、ＩＴＯよりも大きな値となっており、本
発明に係る有機薄膜発光素子の陽極材料として使用が可
能である。Table 1 shows an example of the work function of each metal oxide thin film. These values are measured by atmospheric ultraviolet photoelectron spectroscopy. The work function of the metal oxide thin film shown in Table 1 is larger than that of ITO, and can be used as an anode material of the organic thin film light emitting device according to the present invention.
【００３３】[0033]
【表１】 これらの金属酸化物薄膜の中で光の透過性の乏しいもの
はＩＴＯとの２層構造の電極とする。この例が図２に示
される。図２においては、基板１０の上にＩＴＯ層２２
が形成され、ＩＴＯ層２２の上に金属酸化物薄膜２４が
形成されて２層構造の陽極１２が構成されている。尚、
金属酸化物薄膜２４の上には所定の有機化合物層及び陰
極が形成されているが図示は省略した。[Table 1] Among these metal oxide thin films, those having poor light transmittance are electrodes having a two-layer structure with ITO. This example is shown in FIG. In FIG. 2, an ITO layer 22 is formed on a substrate 10.
Is formed, and a metal oxide thin film 24 is formed on the ITO layer 22 to form the anode 12 having a two-layer structure. still,
A predetermined organic compound layer and a cathode are formed on the metal oxide thin film 24, but are not shown.
【００３４】陽極を２層構造とした場合の金属酸化物薄
膜２４の膜厚は３００オングストローム以下で５０オン
グストローム以上が好ましい。ＩＴＯの膜厚は５００オ
ングストロームから２０００オングストロームの範囲と
する。金属酸化物薄膜の作製は、電子ビーム蒸着、直流
スパッタ法、ＲＦマグネトロンスパッタ法、ＩＣＢ蒸着
法など、酸化物薄膜を作製するのに用いられる方法であ
れば、その作製方法は限定されない。When the anode has a two-layer structure, the thickness of the metal oxide thin film 24 is preferably 300 Å or less and 50 Å or more. The thickness of the ITO is in the range of 500 Å to 2000 Å. The method for manufacturing the metal oxide thin film is not limited as long as it is a method used for manufacturing an oxide thin film, such as electron beam evaporation, direct current sputtering, RF magnetron sputtering, or ICB evaporation.
【００３５】本発明に用いることができる有機化合物
は、図１に示されたものだけではなく、従来公知の材料
すべてが適用される。たとえば、正孔輸送層材料として
は、芳香族３級アミン（ＵＳＰ Ｎｏ．４，１７５，９
６０，ＵＳＰ Ｎｏ．４，５３９，５０７、Ｐｈｉｌ．
Ｍａｇ．Ｂ，５３，１９３（１９８６））、フタロシア
ニン誘導体やピラゾリン誘導体が挙げられ、特に芳香族
３級アミンは最も有用な化合物である。発光層用材料と
しては、金属キレート化オキシノイド化合物（特開昭５
９−１９４３９３）、オキサジアゾール誘導体、ブタジ
エン誘導体、ペリレン誘導体、スチリルベンゼン誘導体
（特開平２−２４７２７７）、ペリノン誘導体等が挙げ
られる。電子輸送層材料としては、オキサジアゾール化
合物（Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５５，１４８９
（１９８９））、ブタジエン誘導体、ペリレン誘導体な
どが挙げられ、また、金属キレート化オキシノイド化合
物（特開昭５９−１９４３９３）も使用できる。As the organic compound which can be used in the present invention, not only those shown in FIG. 1 but all conventionally known materials are applied. For example, as a hole transport layer material, an aromatic tertiary amine (USP No. 4,175,9)
60, USP No. 4,539,507, Phil.
Mag. B, 53, 193 (1986)), phthalocyanine derivatives and pyrazoline derivatives, and aromatic tertiary amines are particularly useful. As a material for the light emitting layer, a metal chelated oxinoid compound (Japanese Unexamined Patent Publication No.
9-194393), oxadiazole derivatives, butadiene derivatives, perylene derivatives, styrylbenzene derivatives (JP-A-2-247277), perinone derivatives and the like. As an electron transport layer material, an oxadiazole compound (Appl. Phys. Lett. 55, 1489) is used.
(1989)), butadiene derivatives, perylene derivatives and the like, and metal chelated oxinoid compounds (JP-A-59-194393) can also be used.
【００３６】陰極材料は、仕事関数の小さい銀、錫、マ
グネシウム、アルミニウム、カルシウム、あるいはこれ
らの合金が用いられる。また、アルミニウムやゲルマニ
ウムをドープした酸化亜鉛も透明な陰極として利用でき
る。陽極と陰極の少なくとも一方は素子の発光波長域で
十分に透明であることが望ましい。As the cathode material, silver, tin, magnesium, aluminum, calcium, or an alloy thereof having a small work function is used. Also, zinc oxide doped with aluminum or germanium can be used as a transparent cathode. It is desirable that at least one of the anode and the cathode is sufficiently transparent in the emission wavelength region of the device.
【００３７】本発明に係る有機薄膜発光素子は、図１に
示されるように、以上の各層をガラス基板やシリコンな
どの半導体基板上に順次積層することで素子として構成
される。これらは、素子の安定性、特に大気中の水分に
対する保護のために、シリコンオイル等と一緒にガラス
セルに封入するようにしてもよい。As shown in FIG. 1, the organic thin-film light-emitting device according to the present invention is formed as an element by sequentially laminating the above layers on a glass substrate or a semiconductor substrate such as silicon. These may be sealed in a glass cell together with silicon oil or the like for the stability of the element, particularly for protection against moisture in the atmosphere.
【００３８】尚、本発明に係る有機薄膜発光素子は、図
１に示される構造に限られるものではなく、必要により
図６，７，８，９に示されるような構造とすることもで
きる。The organic thin-film light emitting device according to the present invention is not limited to the structure shown in FIG. 1, but may have a structure as shown in FIGS.
【００３９】以下、本発明に係る有機薄膜発光素子の具
体例を実施例によりさらに詳細に説明する。Hereinafter, specific examples of the organic thin-film light emitting device according to the present invention will be described in more detail with reference to examples.
【００４０】[0040]
実施例１．本実施例では、金属酸化物薄膜の作製方法と
その特性について示す。Embodiment 1 FIG. Example 1 In this example, a method for manufacturing a metal oxide thin film and its characteristics will be described.
【００４１】表１に示された各材料を使用してガラス基
板上に高周波マグネトロンスパッタ法により金属酸化物
薄膜を形成した。この金属酸化物薄膜の形成条件及び特
性が表２に示される。Using each material shown in Table 1, a metal oxide thin film was formed on a glass substrate by a high-frequency magnetron sputtering method. Table 2 shows the forming conditions and characteristics of the metal oxide thin film.
【００４２】[0042]
【表２】 基板温度は１５０℃で、スパッタガス圧は２×１０-3Ｔ
ｏｒｒ（０．２７Ｐａ）とした。酸化モリブデン薄膜と
酸化ルテニウム薄膜が高い導電性を示し、酸化バナジウ
ム薄膜は半導体的であった。これらの金属酸化物薄膜は
着色しており、表２に示されるように可視域での光の透
過性が低いので、上述の通りＩＴＯとともに２層構造と
するのが好ましい。表２には、各金属酸化物薄膜の典型
的な組成も参考として示される。この組成は、スパッタ
成膜の条件（ガスの圧力、ガスの種類）によって若干変
動する。[Table 2] The substrate temperature is 150 ° C. and the sputtering gas pressure is 2 × 10 −3 T
orr (0.27 Pa). The molybdenum oxide thin film and the ruthenium oxide thin film showed high conductivity, and the vanadium oxide thin film was semiconductor-like. Since these metal oxide thin films are colored and have low light transmittance in the visible region as shown in Table 2, it is preferable to form a two-layer structure together with ITO as described above. Table 2 also shows a typical composition of each metal oxide thin film for reference. This composition slightly varies depending on the conditions of the sputter film formation (gas pressure, gas type).
【００４３】表３には、ＩＴＯと前述の金属酸化物薄膜
とを積層した、図２に示されるような２層構造電極の導
電性と光透過率が示される。金属酸化物薄膜の膜厚は透
明性を高めるために、３００オングストローム以下にし
た。また、ＩＴＯの膜厚は１２００オングストロームと
した。Table 3 shows the conductivity and light transmittance of a two-layer electrode as shown in FIG. 2 in which ITO and the above-mentioned metal oxide thin film were laminated. The thickness of the metal oxide thin film was set to 300 Å or less in order to enhance transparency. The thickness of the ITO was 1200 Å.
【００４４】本実施例の場合、電極を２層構造とするこ
とで、その表面抵抗は約２５Ω／□に設定することがで
きた。また、光透過率は、表２に示された各金属酸化物
薄膜の値よりも向上させることができた。In the case of this embodiment, the surface resistance could be set to about 25 Ω / □ by forming the electrodes in a two-layer structure. Further, the light transmittance was able to be improved from the value of each metal oxide thin film shown in Table 2.
【００４５】[0045]
【表３】 実施例２．本実施例では、図１に示される構造の有機薄
膜発光素子を製作し、その特性を評価した。[Table 3] Embodiment 2. FIG. In this example, an organic thin film light emitting device having the structure shown in FIG. 1 was manufactured and its characteristics were evaluated.
【００４６】ガラス基板上に実施例１の方法により約１
５００オングストロームの酸化バナジウム薄膜からなる
陽極を形成した。その陽極上に、真空蒸着法により、真
空度約２×１０-7Ｔｏｒｒ（２．７×１０-5Ｐａ）、蒸
着速度約３０オングストローム／分の条件でＴＰＤを約
５００オングストローム形成し、正孔輸送層とした。発
光層としてはアルミキノリノール錯体を用いた。陰極と
しては、真空度１×１０-6Ｔｏｒｒ（１．３×１０-4Ｐ
ａ）、蒸着速度約１５０オングストローム／分でＭｇと
Ａｇの合金（Ｍｇ：Ａｇ＝１０：１）を約１８００オン
グストローム形成した。素子１個のサイズは３ｍｍ×３
ｍｍであり、２５ｍｍ×３５ｍｍの基板上に１５個作製
した。On a glass substrate, about 1
An anode made of a 500 Å vanadium oxide thin film was formed. On the anode, about 500 Å of TPD is formed by vacuum evaporation under the conditions of a degree of vacuum of about 2 × 10 −7 Torr (2.7 × 10 −5 Pa) and a deposition rate of about 30 Å / min. It was a transport layer. An aluminum quinolinol complex was used for the light emitting layer. As the cathode, a degree of vacuum of 1 × 10 −6 Torr (1.3 × 10 −4 P
a) An alloy of Mg and Ag (Mg: Ag = 10: 1) was formed at about 1800 Å at a deposition rate of about 150 Å / min. The size of one element is 3 mm x 3
mm, and 15 pieces were produced on a 25 mm × 35 mm substrate.
【００４７】以上のように作製した有機薄膜発光素子の
陽極側に正、陰極側に負の直流電圧を印加し、ガラス基
板側からの発光を観察したところ、印加電圧３Ｖで１ｃ
ｄ／ｍ2 で緑色の発光を開始し、緑色発光が長時間に亘
って観察された。従って、１ｃｄ／ｍ2 の輝度が得られ
る印加電圧を発光開始電圧とすれば、本実施例の素子の
発光開始電圧は３Ｖであった。更に、５Ｖ印加では２０
ｃｄ／ｍ2 の輝度を示した。最高輝度は印加電圧１２Ｖ
で３００ｃｄ／ｍ2 であった。When a positive DC voltage was applied to the anode side and a negative DC voltage was applied to the cathode side of the organic thin-film light-emitting device manufactured as described above, and light emission from the glass substrate side was observed, the applied voltage was 3 V and 1 c
Green light emission was started at d / m 2 , and green light emission was observed over a long period of time. Therefore, assuming that the applied voltage at which a luminance of 1 cd / m 2 is obtained is the light emission start voltage, the light emission start voltage of the device of this example was 3 V. Furthermore, when 5V is applied, 20
It showed a luminance of cd / m 2 . Maximum brightness is applied voltage 12V
Was 300 cd / m 2 .
【００４８】比較例１．ガラス基板上に高周波マグネト
ロンスパッタ法でＩＴＯを１５００オングストローム成
膜して陽極とし、その上に、実施例２と同様の方法で、
正孔輸送層、発光層、ＭｇＡｇ電極を真空蒸着し、比較
用の素子を作製した。この比較用の素子では、１ｃｄ／
ｍ2 の輝度が得られる印加電圧すなわち発光開始電圧は
５Ｖであった。最高輝度は印加電圧１５Ｖで５０００ｃ
ｄ／ｍ2 の性能が得られた。駆動電流１０ｍＡ／ｃｍ2
での発光効率は約０．８５ｌｍ／Ｗであった。この素子
の発光寿命を１０ｍＡ／ｃｍ2 の駆動条件で測定したと
ころ、図４に示されるように、半減寿命（初期輝度の半
分に低下するまでの時間）が８０時間であった。Comparative Example 1 On a glass substrate, 1500 angstrom of ITO was formed by a high-frequency magnetron sputtering method to form an anode, and on the anode, a method similar to that of Example 2 was used.
The hole transport layer, the light emitting layer, and the MgAg electrode were vacuum-deposited to prepare a comparative device. In this comparative device, 1 cd /
The applied voltage at which a luminance of m 2 was obtained, that is, the light emission starting voltage was 5 V. Maximum brightness is 5000c at applied voltage of 15V
A performance of d / m 2 was obtained. Drive current 10 mA / cm 2
Was about 0.85 lm / W. When the light emission lifetime of this device was measured under a driving condition of 10 mA / cm 2 , as shown in FIG. 4, the half-life (time required to decrease to half of the initial luminance) was 80 hours.
【００４９】比較例２．ガラス基板上に高周波マグネト
ロンスパッタ法でＩｎ2 Ｏ3 を１５００オングストロー
ム成膜し、その上に、実施例２と同様の方法で、正孔輸
送層、発光層、ＭｇＡｇ電極を真空蒸着し、比較用の素
子を作製した。この比較用の素子では、１ｃｄ／ｍ2 の
輝度が得られる発光開始電圧は７Ｖで、最高輝度は印加
電圧１５Ｖで４０００ｃｄ／ｍ2 であった。Comparative Example 2 1500 Å of In 2 O 3 was formed on a glass substrate by a high-frequency magnetron sputtering method, and a hole transport layer, a light emitting layer, and an MgAg electrode were vacuum-deposited thereon in the same manner as in Example 2 for comparison. Was manufactured. In this comparative device, the light emission starting voltage at which a luminance of 1 cd / m 2 was obtained was 7 V, and the maximum luminance was 4000 cd / m 2 at an applied voltage of 15 V.
【００５０】比較例３．ガラス基板上に高周波マグネト
ロンスパッタ法でＳｎＯ2 を１５００オングストローム
成膜し、その上に、実施例２と同様の方法で、正孔輸送
層、発光層、ＭｇＡｇ電極を真空蒸着した。この素子で
は、１ｃｄ／ｍ2 の輝度が得られる発光開始電圧は７Ｖ
で、最高輝度は印加電圧１５Ｖで４０００ｃｄ／ｍ2 で
あった。Comparative Example 3 1500 Å of SnO 2 was formed on a glass substrate by a high-frequency magnetron sputtering method, and a hole transport layer, a light emitting layer, and a MgAg electrode were vacuum-deposited thereon in the same manner as in Example 2. In this device, the light emission starting voltage at which a luminance of 1 cd / m 2 is obtained is 7 V
The maximum luminance was 4000 cd / m 2 at an applied voltage of 15 V.
【００５１】このように、実施例２と比較例１、２、３
とを比較すると、本発明による素子では発光開始電圧が
低減していることが分った。しかし、酸化バナジウム電
極の光透過性が低いため、十分な輝度が達成できなかっ
た。そこで、ＩＴＯ薄膜との積層によって光透過性を改
善した２層電極での実施例を次に示す。Thus, Example 2 and Comparative Examples 1, 2, 3
In comparison with the above, it was found that the light emission starting voltage was reduced in the device according to the present invention. However, due to the low light transmittance of the vanadium oxide electrode, sufficient luminance could not be achieved. Therefore, an embodiment using a two-layer electrode in which light transmittance is improved by lamination with an ITO thin film will be described below.
【００５２】実施例３．高周波マグネトロンスパッタ法
で、ガラス基板上に１２００オングストロームのＩＴＯ
と３００オングストロームの酸化バナジウム薄膜を連続
して成膜して２層構造電極（透明電極）を形成した。こ
の電極上に実施例２と同様に、正孔輸送層を約５００オ
ングストローム、発光層を約５００オングストローム、
ＭｇＡｇ電極を約１８００オングストローム成膜して有
機薄膜発光素子を作製した。この有機薄膜発光素子の発
光開始電圧と発光効率を測定した結果が表４に示され
る。Embodiment 3 FIG. 1200 angstroms of ITO on a glass substrate by high frequency magnetron sputtering
And a 300 angstrom vanadium oxide thin film were continuously formed to form a two-layer structure electrode (transparent electrode). On this electrode, as in Example 2, the hole transport layer was about 500 Å, the light emitting layer was about 500 Å,
An MgAg electrode was formed into a film of about 1800 angstroms to produce an organic thin film light emitting device. Table 4 shows the results of measuring the light emission starting voltage and the light emission efficiency of this organic thin film light emitting device.
【００５３】[0053]
【表４】 表４に示されるように、この素子の発光開始電圧は３Ｖ
であった。また、図５に示されるように、わずか５Ｖの
印加で１００ｃｄ／ｍ2 もの輝度が観察された。最高輝
度は１２Ｖで５０００ｃｄ／ｍ2 であり、発光効率は
０．９２ｌｍ／Ｗ（駆動電流１０ｍＡ／ｃｍ2 ）であっ
た。この素子の半減寿命を１０ｍＡ／ｃｍ2 の駆動条件
で測定したところ、図４に示されるように、１００時間
以上であった。ＩＴＯのみを用いた素子にくらべ、より
低い印加電圧で強い発光が可能であり発光効率も改善さ
れ、かつ、発光寿命も長くなることが分った。[Table 4] As shown in Table 4, the light emission starting voltage of this device was 3 V
Met. Further, as shown in FIG. 5, a luminance as high as 100 cd / m 2 was observed by applying only 5 V. The maximum luminance was 5000 cd / m 2 at 12 V, and the luminous efficiency was 0.92 lm / W (drive current 10 mA / cm 2 ). When the half-life of this device was measured under the driving condition of 10 mA / cm 2 , it was 100 hours or more as shown in FIG. Compared to the device using only ITO, it was found that intense light emission was possible at a lower applied voltage, the light emission efficiency was improved, and the light emission life was longer.
【００５４】更に、酸化バナジウム薄膜を１００オング
ストロームとした２層構造電極の場合、発光開始電圧は
３Ｖで上述の例と変わらなかったが、最高輝度が高くな
り、発光効率は１．０ｌｍ／Ｗとなった。Further, in the case of a two-layer structure electrode having a vanadium oxide thin film of 100 Å, the light emission starting voltage was 3 V, which was the same as the above example, but the maximum luminance was high and the light emission efficiency was 1.0 lm / W. became.
【００５５】実施例４．ガラス基板上に１４００オング
ストロームのＩＴＯと３００オングストロームの酸化ル
テニウム薄膜を成膜した２層構造電極の上に、実施例２
と同様に、正孔輸送層を約５００オングストローム、発
光層を約５００オングストローム、ＭｇＡｇ電極を約１
８００オングストローム成膜して有機薄膜発光素子を作
製し、実施例３と同様に発光開始電圧と発光効率を測定
した。Embodiment 4 FIG. Example 2 Example 2 was formed on a two-layer electrode in which 1400 Å of ITO and 300 Å of ruthenium oxide thin film were formed on a glass substrate.
Similarly, the hole transport layer is about 500 Å, the light emitting layer is about 500 Å, and the MgAg electrode is about 1 Å.
An organic thin film light emitting device was manufactured by forming a film of 800 angstrom, and the light emission starting voltage and the light emission efficiency were measured in the same manner as in Example 3.
【００５６】表４に示されるように、この素子の発光開
始電圧は３．５Ｖであった。また、５Ｖ印加で３０ｃｄ
／ｍ2 の輝度が観察された（図４）。発光効率は０．８
５ｌｍ／Ｗであった。As shown in Table 4, the light emission starting voltage of this device was 3.5 V. In addition, 30 cd with 5 V applied
/ M 2 was observed (FIG. 4). Luminous efficiency is 0.8
It was 5 lm / W.
【００５７】本実施例においては、酸化ルテニウムの膜
厚をさらに薄くすれば電極の光透過率が改善され、効率
がさらに向上する。In this embodiment, if the thickness of ruthenium oxide is further reduced, the light transmittance of the electrode is improved, and the efficiency is further improved.
【００５８】実施例５．ガラス基板上に、１２００オン
グストロームのＩＴＯと３００オングストロームの酸化
モリブデンを連続成膜した２層構造電極を形成し、その
上に実施例２と同様に、正孔輸送層、発光層、電極を真
空蒸着して有機薄膜発光素子を作製し、実施例３と同様
に発光開始電圧と発光効率を測定した。Embodiment 5 FIG. On a glass substrate, a two-layer electrode was formed by continuously depositing 1200 Å of ITO and 300 Å of molybdenum oxide, and a hole transport layer, a light-emitting layer, and an electrode were vacuum-deposited thereon in the same manner as in Example 2. Thus, an organic thin-film light-emitting device was manufactured, and the light-emission starting voltage and the light-emission efficiency were measured in the same manner as in Example 3.
【００５９】表４に示されるように、この素子の発光開
始電圧は３．５Ｖで、印加電圧５Ｖでは３０ｃｄ／ｍ2
の輝度を示した（図５）。As shown in Table 4, the light emission starting voltage of this device was 3.5 V, and 30 cd / m 2 at an applied voltage of 5 V.
(FIG. 5).
【００６０】実施例６．次に、上部電極（陰極）から、
光を取り出す場合の素子についての実施例を示す。Embodiment 6 FIG. Next, from the upper electrode (cathode)
An example of an element for extracting light will be described.
【００６１】図３には、本実施例に係る有機薄膜発光素
子の断面図が示される。図３において、ガラス基板１０
上に、酸化ルテニウムを１５００オングストローム成膜
して陽極１２とし、その上に、実施例２と同様に、正孔
輸送層１８と発光層１６とを真空蒸着した。最後に、陰
極１４として、仕事関数の小さなアルミ添加酸化亜鉛を
高周波スパッタ法で約１２００オングストローム成膜し
た。FIG. 3 is a sectional view of the organic thin-film light emitting device according to this embodiment. In FIG. 3, a glass substrate 10
A film of ruthenium oxide was formed to a thickness of 1500 angstroms to form the anode 12, on which the hole transport layer 18 and the light emitting layer 16 were vacuum-deposited in the same manner as in Example 2. Finally, as the cathode 14, aluminum-added zinc oxide having a small work function was formed into a film of about 1200 angstroms by a high frequency sputtering method.
【００６２】この素子で、酸化ルテニウム電極（陽極１
２）に正の電圧を印加し、酸化亜鉛電極（陰極１４）を
通して光を観測したところ、透明な陰極１４側から明瞭
な発光が観察された。この場合、酸化ルテニウム電極が
黒色であるためＭｇＡｇ金属電極の場合よりもコントラ
スト比の高い発光が得られた。In this device, a ruthenium oxide electrode (anode 1) was used.
When a positive voltage was applied to 2) and light was observed through the zinc oxide electrode (cathode 14), clear light emission was observed from the transparent cathode 14 side. In this case, since the ruthenium oxide electrode was black, light emission with a higher contrast ratio was obtained than in the case of the MgAg metal electrode.
【００６３】[0063]
【発明の効果】以上説明したように、本発明によれば、
金属酸化物薄膜電極と正孔輸送層あるいは発光層とのエ
ネルギー障壁を小さくでき、正孔輸送層や発光層への正
孔注入が容易となり、低い印加電圧で素子駆動が可能と
なる。その結果、発光効率が改善され、素子の長寿命化
が達成できる。よって、本発明の発光素子は各種ディス
プレイ分野への応用が可能となる。As described above, according to the present invention,
The energy barrier between the metal oxide thin film electrode and the hole transport layer or the light emitting layer can be reduced, holes can be easily injected into the hole transport layer or the light emitting layer, and the device can be driven with a low applied voltage. As a result, the luminous efficiency is improved, and the life of the element can be extended. Therefore, the light emitting device of the present invention can be applied to various display fields.
【図１】 本発明に係る有機薄膜発光素子の断面図であ
る。FIG. 1 is a cross-sectional view of an organic thin-film light emitting device according to the present invention.
【図２】 本発明に係る２層構造電極の断面図である。FIG. 2 is a sectional view of a two-layer electrode according to the present invention.
【図３】 本発明に係る陰極から光を取り出す有機薄膜
発光素子の断面図である。FIG. 3 is a cross-sectional view of an organic thin-film light-emitting device that extracts light from a cathode according to the present invention.
【図４】 各種素子の駆動時間に対する発光輝度の変化
を示す図である。FIG. 4 is a diagram showing a change in light emission luminance with respect to driving time of various elements.
【図５】 各種素子の印加電圧と発光輝度との関係を示
す図である。FIG. 5 is a diagram showing a relationship between applied voltages of various elements and light emission luminance.
【図６】 単層構造の有機薄膜発光素子の断面図であ
る。FIG. 6 is a cross-sectional view of an organic thin film light emitting device having a single layer structure.
【図７】 正孔輸送層を有する２層構造有機薄膜発光素
子の断面図である。FIG. 7 is a cross-sectional view of a two-layer organic thin film light emitting device having a hole transport layer.
【図８】 電子輸送層を有する２層構造有機薄膜発光素
子の断面図である。FIG. 8 is a cross-sectional view of a two-layer organic thin-film light emitting device having an electron transport layer.
【図９】 ３層構造の有機薄膜発光素子の断面図であ
る。FIG. 9 is a sectional view of an organic thin-film light emitting device having a three-layer structure.
１０ 基板、１２ 陽極、１４ 陰極、１６ 発光層、
１８ 正孔輸送層、２０ 電子輸送層、２２ ＩＴＯ
層、２４ 金属酸化物薄膜。10 substrate, 12 anode, 14 cathode, 16 light emitting layer,
18 hole transport layer, 20 electron transport layer, 22 ITO
Layer, 24 metal oxide thin film.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−151063（ＪＰ，Ａ) 特開 平６−5369（ＪＰ，Ａ) 特開 平４−772（ＪＰ，Ａ) 特開 平４−121953（ＪＰ，Ａ) 特開 平２−144851（ＪＰ，Ａ) 特開 平２−209988（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H05B 33/26──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-6-151063 (JP, A) JP-A-6-5369 (JP, A) JP-A-4-772 (JP, A) JP-A-4- 121953 (JP, A) JP-A-2-1444851 (JP, A) JP-A-2-209988 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H05B 33/26
Claims (7)
層または複数層の有機化合物層より構成される有機薄膜
発光素子において、前記陽極が、仕事関数が酸化錫イン
ジウム（ＩＴＯ）よりも大きな金属酸化物薄膜からなる
ことを特徴とする有機薄膜発光素子。1. An anode and a cathode, and an anode and a cathode sandwiched therebetween.
An organic thin-film light-emitting device comprising a layer or a plurality of organic compound layers, wherein the anode comprises a metal oxide thin film having a work function larger than that of indium tin oxide (ITO).
て、前記陽極を、膜厚５００オングストロームから２０
００オングストロームの範囲のＩＴＯ薄膜と５０オング
ストロームから３００オングストロームの範囲の金属酸
化物薄膜とにより２層構造としたことを特徴とする有機
薄膜発光素子。2. The organic thin-film light emitting device according to claim 1, wherein said anode is formed to a thickness of 500 Å to 20 Å.
An organic thin-film light-emitting device having a two-layer structure comprising an ITO thin film in a range of 00 Å and a metal oxide thin film in a range of 50 Å to 300 Å.
て、前記有機化合物層が発光層であることを特徴とする
有機薄膜発光素子。3. The organic thin film light emitting device according to claim 1, wherein said organic compound layer is a light emitting layer.
て、前記有機化合物層が正孔輸送層と発光層とからなる
ことを特徴とする有機薄膜発光素子。4. The organic thin film light emitting device according to claim 1, wherein said organic compound layer comprises a hole transport layer and a light emitting layer.
て、前記有機化合物層が発光層と電子輸送層とからなる
ことを特徴とする有機薄膜発光素子。5. The organic thin-film light-emitting device according to claim 1, wherein said organic compound layer comprises a light-emitting layer and an electron transport layer.
て、前記有機化合物層が正孔輸送層と発光層と電子輸送
層とからなることを特徴とする有機薄膜発光素子。6. The organic thin film light emitting device according to claim 1, wherein said organic compound layer comprises a hole transport layer, a light emitting layer, and an electron transport layer.
て、前記金属酸化物は、酸化バナジウム、酸化ルテニウ
ム、酸化モリブデンなどの仕事関数が４．６ｅＶよりも
大きな酸化物であることを特徴とする有機薄膜発光素
子。7. The organic thin-film light emitting device according to claim 1, wherein the metal oxide is an oxide having a work function larger than 4.6 eV, such as vanadium oxide, ruthenium oxide, and molybdenum oxide. Organic thin film light emitting device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7217130A JP2824411B2 (en) | 1995-08-25 | 1995-08-25 | Organic thin-film light emitting device |
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|---|---|
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| Publication number | Publication date |
|---|---|
| JPH0963771A (en) | 1997-03-07 |
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