GB2305003B - Semiconductor contact layer structure - Google Patents

Semiconductor contact layer structure

Info

Publication number
GB2305003B
GB2305003B GB9617283A GB9617283A GB2305003B GB 2305003 B GB2305003 B GB 2305003B GB 9617283 A GB9617283 A GB 9617283A GB 9617283 A GB9617283 A GB 9617283A GB 2305003 B GB2305003 B GB 2305003B
Authority
GB
United Kingdom
Prior art keywords
layer structure
contact layer
semiconductor contact
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9617283A
Other versions
GB2305003A (en
GB9617283D0 (en
Inventor
Mark Levence Leadbeater
Nalin Kumar Patel
Jeremy Henley Burroughes
Angus North
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Publication of GB9617283D0 publication Critical patent/GB9617283D0/en
Publication of GB2305003A publication Critical patent/GB2305003A/en
Application granted granted Critical
Publication of GB2305003B publication Critical patent/GB2305003B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9617283A 1995-08-23 1996-08-16 Semiconductor contact layer structure Expired - Fee Related GB2305003B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9517297A GB2304993B (en) 1995-08-23 1995-08-23 Semiconductor device

Publications (3)

Publication Number Publication Date
GB9617283D0 GB9617283D0 (en) 1996-09-25
GB2305003A GB2305003A (en) 1997-03-26
GB2305003B true GB2305003B (en) 1997-10-08

Family

ID=10779667

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9517297A Expired - Lifetime GB2304993B (en) 1995-08-23 1995-08-23 Semiconductor device
GB9617283A Expired - Fee Related GB2305003B (en) 1995-08-23 1996-08-16 Semiconductor contact layer structure

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9517297A Expired - Lifetime GB2304993B (en) 1995-08-23 1995-08-23 Semiconductor device

Country Status (2)

Country Link
JP (1) JPH09167876A (en)
GB (2) GB2304993B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
CN111244188B (en) * 2020-01-19 2022-04-01 中国科学院上海微系统与信息技术研究所 Heterojunction AlGaAs/GaAs diode and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012756A (en) * 1969-12-30 1977-03-15 International Business Machines Corporation Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith
US4048646A (en) * 1975-02-26 1977-09-13 Nippon Electric Company, Limited Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
US4165515A (en) * 1977-12-28 1979-08-21 Bell Telephone Laboratories, Incorporated Light emitting tunnel junctions which are stable at room temperature
GB2144266A (en) * 1983-06-29 1985-02-27 Citizen Watch Co Ltd Method of manufacture for ultra-miniature thin-film diodes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE189748T1 (en) * 1988-01-06 2000-02-15 Telstra Corp Ltd POWER INJECTION LASER
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4901327A (en) * 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012756A (en) * 1969-12-30 1977-03-15 International Business Machines Corporation Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith
US4048646A (en) * 1975-02-26 1977-09-13 Nippon Electric Company, Limited Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
US4165515A (en) * 1977-12-28 1979-08-21 Bell Telephone Laboratories, Incorporated Light emitting tunnel junctions which are stable at room temperature
GB2144266A (en) * 1983-06-29 1985-02-27 Citizen Watch Co Ltd Method of manufacture for ultra-miniature thin-film diodes

Also Published As

Publication number Publication date
GB2305003A (en) 1997-03-26
GB9517297D0 (en) 1995-10-25
GB2304993B (en) 1997-08-06
GB2304993A (en) 1997-03-26
JPH09167876A (en) 1997-06-24
GB9617283D0 (en) 1996-09-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100816