GB9517297D0 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB9517297D0 GB9517297D0 GBGB9517297.9A GB9517297A GB9517297D0 GB 9517297 D0 GB9517297 D0 GB 9517297D0 GB 9517297 A GB9517297 A GB 9517297A GB 9517297 D0 GB9517297 D0 GB 9517297D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9517297A GB2304993B (en) | 1995-08-23 | 1995-08-23 | Semiconductor device |
GB9617283A GB2305003B (en) | 1995-08-23 | 1996-08-16 | Semiconductor contact layer structure |
JP22279696A JPH09167876A (en) | 1995-08-23 | 1996-08-23 | Semiconductor laser and fabrication of semiconductor laser and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9517297A GB2304993B (en) | 1995-08-23 | 1995-08-23 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9517297D0 true GB9517297D0 (en) | 1995-10-25 |
GB2304993A GB2304993A (en) | 1997-03-26 |
GB2304993B GB2304993B (en) | 1997-08-06 |
Family
ID=10779667
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9517297A Expired - Lifetime GB2304993B (en) | 1995-08-23 | 1995-08-23 | Semiconductor device |
GB9617283A Expired - Fee Related GB2305003B (en) | 1995-08-23 | 1996-08-16 | Semiconductor contact layer structure |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9617283A Expired - Fee Related GB2305003B (en) | 1995-08-23 | 1996-08-16 | Semiconductor contact layer structure |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH09167876A (en) |
GB (2) | GB2304993B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
CN111244188B (en) * | 2020-01-19 | 2022-04-01 | 中国科学院上海微系统与信息技术研究所 | Heterojunction AlGaAs/GaAs diode and preparation method thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4012756A (en) * | 1969-12-30 | 1977-03-15 | International Business Machines Corporation | Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith |
FR2302592A1 (en) * | 1975-02-26 | 1976-09-24 | Nippon Electric Co | DOUBLE DOOR SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR |
US4165515A (en) * | 1977-12-28 | 1979-08-21 | Bell Telephone Laboratories, Incorporated | Light emitting tunnel junctions which are stable at room temperature |
DE3424085A1 (en) * | 1983-06-29 | 1985-01-17 | Citizen Watch Co., Ltd., Tokio/Tokyo | METHOD FOR THE PRODUCTION OF HIGHLY MINIMIZED THICK FILM DIODES |
ATE189748T1 (en) * | 1988-01-06 | 2000-02-15 | Telstra Corp Ltd | POWER INJECTION LASER |
US4943970A (en) * | 1988-10-24 | 1990-07-24 | General Dynamics Corporation, Electronics Division | Surface emitting laser |
US4901327A (en) * | 1988-10-24 | 1990-02-13 | General Dynamics Corporation, Electronics Division | Transverse injection surface emitting laser |
US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
US5018157A (en) * | 1990-01-30 | 1991-05-21 | At&T Bell Laboratories | Vertical cavity semiconductor lasers |
US5068868A (en) * | 1990-05-21 | 1991-11-26 | At&T Bell Laboratories | Vertical cavity surface emitting lasers with electrically conducting mirrors |
US5212703A (en) * | 1992-02-18 | 1993-05-18 | Eastman Kodak Company | Surface emitting lasers with low resistance bragg reflectors |
US5388120A (en) * | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
-
1995
- 1995-08-23 GB GB9517297A patent/GB2304993B/en not_active Expired - Lifetime
-
1996
- 1996-08-16 GB GB9617283A patent/GB2305003B/en not_active Expired - Fee Related
- 1996-08-23 JP JP22279696A patent/JPH09167876A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2305003A (en) | 1997-03-26 |
GB2304993B (en) | 1997-08-06 |
GB2304993A (en) | 1997-03-26 |
JPH09167876A (en) | 1997-06-24 |
GB9617283D0 (en) | 1996-09-25 |
GB2305003B (en) | 1997-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW520816U (en) | Semiconductor device | |
GB2292010B (en) | Semiconductor device | |
GB2295488B (en) | Semiconductor device | |
EP0704897A3 (en) | Semiconductor device | |
TW505356U (en) | Semiconductor device | |
EP0723292A3 (en) | Semiconductor device | |
EP0720295A3 (en) | Semiconductor device | |
TW490082U (en) | Semiconductor device | |
GB9523207D0 (en) | Semiconductor device | |
GB2292637B (en) | Semiconductor device | |
GB2323212B (en) | Secure semiconductor device | |
SG63659A1 (en) | Semiconductor device | |
GB2295272B (en) | Semiconductor device | |
GB2308740B (en) | Semiconductor device | |
GB2303963B (en) | Semiconductor device | |
GB2296373B (en) | Semiconductor device | |
EP0716445A3 (en) | Semiconductor device | |
GB2295051B (en) | Semiconductor device | |
GB9402639D0 (en) | Semiconductor device | |
GB9513898D0 (en) | Semiconductor device | |
GB2286719B (en) | Semiconductor device | |
GB2304993B (en) | Semiconductor device | |
GB2304992B (en) | Semiconductor device | |
GB0101031D0 (en) | Semiconductor device | |
GB9504726D0 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20150822 |