GB2300302B - Flash eeprom cell and manufacturing methods thereof - Google Patents

Flash eeprom cell and manufacturing methods thereof

Info

Publication number
GB2300302B
GB2300302B GB9608086A GB9608086A GB2300302B GB 2300302 B GB2300302 B GB 2300302B GB 9608086 A GB9608086 A GB 9608086A GB 9608086 A GB9608086 A GB 9608086A GB 2300302 B GB2300302 B GB 2300302B
Authority
GB
United Kingdom
Prior art keywords
manufacturing methods
flash eeprom
eeprom cell
cell
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9608086A
Other languages
English (en)
Other versions
GB2300302A (en
GB9608086D0 (en
Inventor
Jae Chun An
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9608086D0 publication Critical patent/GB9608086D0/en
Publication of GB2300302A publication Critical patent/GB2300302A/en
Application granted granted Critical
Publication of GB2300302B publication Critical patent/GB2300302B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
GB9608086A 1995-04-25 1996-04-18 Flash eeprom cell and manufacturing methods thereof Expired - Fee Related GB2300302B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950009736A KR0172271B1 (ko) 1995-04-25 1995-04-25 플래쉬 이이피롬 셀의 제조방법

Publications (3)

Publication Number Publication Date
GB9608086D0 GB9608086D0 (en) 1996-06-19
GB2300302A GB2300302A (en) 1996-10-30
GB2300302B true GB2300302B (en) 1999-07-21

Family

ID=19412871

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9608086A Expired - Fee Related GB2300302B (en) 1995-04-25 1996-04-18 Flash eeprom cell and manufacturing methods thereof

Country Status (5)

Country Link
KR (1) KR0172271B1 (de)
CN (1) CN1100351C (de)
DE (1) DE19616603C2 (de)
GB (1) GB2300302B (de)
TW (1) TW306069B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1298026C (zh) * 2003-10-30 2007-01-31 上海集成电路研发中心有限公司 一种用于制造闪烁存储器控制栅堆积结构形成工艺的改进方法
KR100871547B1 (ko) * 2007-08-14 2008-12-01 주식회사 동부하이텍 노어 플래시 메모리 소자 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243718A (en) * 1990-04-30 1991-11-06 Intel Corp A process for fabricating a contact less floating gate memory array
US5469383A (en) * 1992-09-30 1995-11-21 Texas Instruments Incorporated Memory cell array having continuous-strip field-oxide regions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
JPH0247868A (ja) * 1988-08-10 1990-02-16 Fujitsu Ltd 不揮発性半導体記憶装置
EP0509696A3 (en) * 1991-04-18 1993-02-03 National Semiconductor Corporation Contactless flash eprom cell using a standard row decoder
WO1994014196A1 (en) * 1992-12-08 1994-06-23 National Semiconductor Corporation High density contactless flash eprom array using channel erase
DE69417211T2 (de) * 1994-04-12 1999-07-08 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Planariezierungsverfahren für die Herstellung von integrierten Schaltkreisen, insbesondere für nichtflüssige Halbleiterspeicheranordnungen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243718A (en) * 1990-04-30 1991-11-06 Intel Corp A process for fabricating a contact less floating gate memory array
US5469383A (en) * 1992-09-30 1995-11-21 Texas Instruments Incorporated Memory cell array having continuous-strip field-oxide regions

Also Published As

Publication number Publication date
GB2300302A (en) 1996-10-30
GB9608086D0 (en) 1996-06-19
TW306069B (de) 1997-05-21
DE19616603A1 (de) 1996-10-31
CN1143815A (zh) 1997-02-26
KR0172271B1 (ko) 1999-02-01
KR960039406A (ko) 1996-11-25
DE19616603C2 (de) 2002-12-12
CN1100351C (zh) 2003-01-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100418