GB9608086D0 - Flash eprom cell and manufacturing methods thereof - Google Patents
Flash eprom cell and manufacturing methods thereofInfo
- Publication number
- GB9608086D0 GB9608086D0 GBGB9608086.6A GB9608086A GB9608086D0 GB 9608086 D0 GB9608086 D0 GB 9608086D0 GB 9608086 A GB9608086 A GB 9608086A GB 9608086 D0 GB9608086 D0 GB 9608086D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing methods
- flash eprom
- eprom cell
- cell
- flash
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950009736A KR0172271B1 (en) | 1995-04-25 | 1995-04-25 | Method of manufacturing flash eeprom cell |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9608086D0 true GB9608086D0 (en) | 1996-06-19 |
GB2300302A GB2300302A (en) | 1996-10-30 |
GB2300302B GB2300302B (en) | 1999-07-21 |
Family
ID=19412871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9608086A Expired - Fee Related GB2300302B (en) | 1995-04-25 | 1996-04-18 | Flash eeprom cell and manufacturing methods thereof |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR0172271B1 (en) |
CN (1) | CN1100351C (en) |
DE (1) | DE19616603C2 (en) |
GB (1) | GB2300302B (en) |
TW (1) | TW306069B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1298026C (en) * | 2003-10-30 | 2007-01-31 | 上海集成电路研发中心有限公司 | Method for modifying formation procedure for fabricating cumulate texture of controlling grid of flash memory |
KR100871547B1 (en) * | 2007-08-14 | 2008-12-01 | 주식회사 동부하이텍 | Nor flash memory device and method for fabricating the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5047981A (en) * | 1988-07-15 | 1991-09-10 | Texas Instruments Incorporated | Bit and block erasing of an electrically erasable and programmable read-only memory array |
JPH0247868A (en) * | 1988-08-10 | 1990-02-16 | Fujitsu Ltd | Nonvolatile semiconductor memory device |
US5087584A (en) * | 1990-04-30 | 1992-02-11 | Intel Corporation | Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
EP0509697B1 (en) * | 1991-04-18 | 1999-06-09 | National Semiconductor Corporation | Stacked etch fabrication of cross-point EPROM arrays |
US5350706A (en) * | 1992-09-30 | 1994-09-27 | Texas Instruments Incorporated | CMOS memory cell array |
WO1994014196A1 (en) * | 1992-12-08 | 1994-06-23 | National Semiconductor Corporation | High density contactless flash eprom array using channel erase |
DE69417211T2 (en) * | 1994-04-12 | 1999-07-08 | Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano | Planarization process for the production of integrated circuits, in particular for non-liquid semiconductor memory devices |
-
1995
- 1995-04-25 KR KR1019950009736A patent/KR0172271B1/en not_active IP Right Cessation
-
1996
- 1996-04-17 TW TW085104591A patent/TW306069B/zh not_active IP Right Cessation
- 1996-04-18 GB GB9608086A patent/GB2300302B/en not_active Expired - Fee Related
- 1996-04-25 DE DE19616603A patent/DE19616603C2/en not_active Expired - Fee Related
- 1996-04-25 CN CN96107303A patent/CN1100351C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW306069B (en) | 1997-05-21 |
DE19616603C2 (en) | 2002-12-12 |
KR0172271B1 (en) | 1999-02-01 |
CN1143815A (en) | 1997-02-26 |
KR960039406A (en) | 1996-11-25 |
CN1100351C (en) | 2003-01-29 |
GB2300302A (en) | 1996-10-30 |
GB2300302B (en) | 1999-07-21 |
DE19616603A1 (en) | 1996-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2299449B (en) | Flash eeprom cell and manufacturing methods thereof | |
EP0848435A4 (en) | Cell and production method thereof | |
IL125126A (en) | Electroconversion cell | |
EP0871989A4 (en) | Electrical and structural interconnector | |
EP0841950A4 (en) | Neuronal progenitor cells and uses thereof | |
IL123449A0 (en) | Toothbrush and its manufacture | |
EP0745843A3 (en) | Electrochemical immunobiosensor | |
IL117721A0 (en) | Spacer flash cell process | |
GB2299451B (en) | Flash Eeprom cell and manufacturing method therefor | |
HU9603368D0 (en) | Building structure | |
GB2311167B (en) | Flash EEPROM cell and method of manufacturing the same | |
GB9624085D0 (en) | Precipitates and their production | |
EP0836617A4 (en) | Parevins and tachytegrins | |
GB2291263B (en) | Flash memory cells and methods for fabricating and arraying flash memory cells | |
ZA965191B (en) | Cell treatment | |
GB9608086D0 (en) | Flash eprom cell and manufacturing methods thereof | |
GB2304128B (en) | Blockage-resistant gutters and drains | |
GB2302839B (en) | Improvements in the manufacture of roof tiles | |
GB2307493B (en) | Fencing | |
GB9522756D0 (en) | Cell line and method | |
GB2298663B (en) | Fence | |
IL112871A0 (en) | Structural element and methods for its manufacture | |
EP0673071A3 (en) | Flash EEPROM and EPROM arrays. | |
PL103323U1 (en) | Construction and building up set | |
PL103475U1 (en) | Fencing set |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20100418 |