GB9608086D0 - Flash eprom cell and manufacturing methods thereof - Google Patents

Flash eprom cell and manufacturing methods thereof

Info

Publication number
GB9608086D0
GB9608086D0 GBGB9608086.6A GB9608086A GB9608086D0 GB 9608086 D0 GB9608086 D0 GB 9608086D0 GB 9608086 A GB9608086 A GB 9608086A GB 9608086 D0 GB9608086 D0 GB 9608086D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing methods
flash eprom
eprom cell
cell
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9608086.6A
Other versions
GB2300302A (en
GB2300302B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9608086D0 publication Critical patent/GB9608086D0/en
Publication of GB2300302A publication Critical patent/GB2300302A/en
Application granted granted Critical
Publication of GB2300302B publication Critical patent/GB2300302B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
GB9608086A 1995-04-25 1996-04-18 Flash eeprom cell and manufacturing methods thereof Expired - Fee Related GB2300302B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950009736A KR0172271B1 (en) 1995-04-25 1995-04-25 Method of manufacturing flash eeprom cell

Publications (3)

Publication Number Publication Date
GB9608086D0 true GB9608086D0 (en) 1996-06-19
GB2300302A GB2300302A (en) 1996-10-30
GB2300302B GB2300302B (en) 1999-07-21

Family

ID=19412871

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9608086A Expired - Fee Related GB2300302B (en) 1995-04-25 1996-04-18 Flash eeprom cell and manufacturing methods thereof

Country Status (5)

Country Link
KR (1) KR0172271B1 (en)
CN (1) CN1100351C (en)
DE (1) DE19616603C2 (en)
GB (1) GB2300302B (en)
TW (1) TW306069B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1298026C (en) * 2003-10-30 2007-01-31 上海集成电路研发中心有限公司 Method for modifying formation procedure for fabricating cumulate texture of controlling grid of flash memory
KR100871547B1 (en) * 2007-08-14 2008-12-01 주식회사 동부하이텍 Nor flash memory device and method for fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
JPH0247868A (en) * 1988-08-10 1990-02-16 Fujitsu Ltd Nonvolatile semiconductor memory device
US5087584A (en) * 1990-04-30 1992-02-11 Intel Corporation Process for fabricating a contactless floating gate memory array utilizing wordline trench vias
EP0509697B1 (en) * 1991-04-18 1999-06-09 National Semiconductor Corporation Stacked etch fabrication of cross-point EPROM arrays
US5350706A (en) * 1992-09-30 1994-09-27 Texas Instruments Incorporated CMOS memory cell array
WO1994014196A1 (en) * 1992-12-08 1994-06-23 National Semiconductor Corporation High density contactless flash eprom array using channel erase
DE69417211T2 (en) * 1994-04-12 1999-07-08 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Planarization process for the production of integrated circuits, in particular for non-liquid semiconductor memory devices

Also Published As

Publication number Publication date
TW306069B (en) 1997-05-21
DE19616603C2 (en) 2002-12-12
KR0172271B1 (en) 1999-02-01
CN1143815A (en) 1997-02-26
KR960039406A (en) 1996-11-25
CN1100351C (en) 2003-01-29
GB2300302A (en) 1996-10-30
GB2300302B (en) 1999-07-21
DE19616603A1 (en) 1996-10-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100418