GB2293920B - Semiconductor sensor with a fusion bonded flexible structure - Google Patents

Semiconductor sensor with a fusion bonded flexible structure

Info

Publication number
GB2293920B
GB2293920B GB9520372A GB9520372A GB2293920B GB 2293920 B GB2293920 B GB 2293920B GB 9520372 A GB9520372 A GB 9520372A GB 9520372 A GB9520372 A GB 9520372A GB 2293920 B GB2293920 B GB 2293920B
Authority
GB
United Kingdom
Prior art keywords
flexible structure
semiconductor sensor
fusion bonded
bonded flexible
fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9520372A
Other languages
English (en)
Other versions
GB9520372D0 (en
GB2293920A (en
Inventor
Raffi M Garabedian
M Salleh Ismail
Gary J Pashby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kavlico Corp
Original Assignee
Kavlico Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kavlico Corp filed Critical Kavlico Corp
Publication of GB9520372D0 publication Critical patent/GB9520372D0/en
Publication of GB2293920A publication Critical patent/GB2293920A/en
Application granted granted Critical
Publication of GB2293920B publication Critical patent/GB2293920B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/038—Bonding techniques not provided for in B81C2203/031 - B81C2203/037
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
GB9520372A 1994-10-06 1995-10-05 Semiconductor sensor with a fusion bonded flexible structure Expired - Fee Related GB2293920B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/318,918 US5578843A (en) 1994-10-06 1994-10-06 Semiconductor sensor with a fusion bonded flexible structure

Publications (3)

Publication Number Publication Date
GB9520372D0 GB9520372D0 (en) 1995-12-06
GB2293920A GB2293920A (en) 1996-04-10
GB2293920B true GB2293920B (en) 1999-03-10

Family

ID=23240123

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9520372A Expired - Fee Related GB2293920B (en) 1994-10-06 1995-10-05 Semiconductor sensor with a fusion bonded flexible structure

Country Status (3)

Country Link
US (2) US5578843A (de)
DE (1) DE19537285B4 (de)
GB (1) GB2293920B (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871499A (en) * 1993-06-30 1999-02-16 Novatrix, Inc. Child birth assisting system
DE19638373B8 (de) * 1995-09-19 2007-08-09 Denso Corp., Kariya Halbleitersensor und sein Herstellungsverfahren
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
US6038928A (en) 1996-10-07 2000-03-21 Lucas Novasensor Miniature gauge pressure sensor using silicon fusion bonding and back etching
US6043524A (en) * 1997-02-03 2000-03-28 Motorola, Inc. Transducer and interface circuit
US5923952A (en) * 1997-07-18 1999-07-13 Kavlico Corporation Fusion-bond electrical feed-through
US6211558B1 (en) 1997-07-18 2001-04-03 Kavlico Corporation Surface micro-machined sensor with pedestal
US6124765A (en) * 1997-10-24 2000-09-26 Stmicroelectronics, Inc. Integrated released beam oscillator and associated methods
US5917226A (en) * 1997-10-24 1999-06-29 Stmicroelectronics, Inc. Integrated released beam, thermo-mechanical sensor for sensing temperature variations and associated methods
US6058778A (en) 1997-10-24 2000-05-09 Stmicroelectronics, Inc. Integrated sensor having plurality of released beams for sensing acceleration
US6028343A (en) * 1997-10-24 2000-02-22 Stmicroelectronics, Inc. Integrated released beam sensor for sensing acceleration and associated methods
US5955771A (en) * 1997-11-12 1999-09-21 Kulite Semiconductor Products, Inc. Sensors for use in high vibrational applications and methods for fabricating same
US6008113A (en) * 1998-05-19 1999-12-28 Kavlico Corporation Process for wafer bonding in a vacuum
US6143583A (en) * 1998-06-08 2000-11-07 Honeywell, Inc. Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
JP2000094696A (ja) * 1998-09-24 2000-04-04 Ricoh Co Ltd インクジェットヘッド及びその作製方法
US6232150B1 (en) 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
US6388299B1 (en) 1998-12-10 2002-05-14 Honeywell Inc. Sensor assembly and method
EP1173893A4 (de) * 1999-01-15 2007-08-01 Univ California Polykristalline silizium-germanium-filme zur herstellung mikroelektrochemischer systeme
US6211598B1 (en) * 1999-09-13 2001-04-03 Jds Uniphase Inc. In-plane MEMS thermal actuator and associated fabrication methods
ATE501089T1 (de) * 1999-09-28 2011-03-15 Honeywell Inc Herstellungsverfahren mit auflösung der halbleiterscheibe und entsprechende mikroelektromechanische vorrichtung auf einem trägersubstrat mit distanzmesas
FR2801970B1 (fr) * 1999-12-07 2002-02-15 St Microelectronics Sa Capteur magnetique de tres haute sensibilite
WO2001063645A2 (en) 2000-02-23 2001-08-30 National Center For Scientific Research 'demokrit Os Institute Of Microelectronics Capacitive pressure-responsive devices and their fabrication
US6647796B2 (en) * 2000-08-11 2003-11-18 California Institue Of Technology Semiconductor nitride pressure microsensor and method of making and using the same
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US6808956B2 (en) * 2000-12-27 2004-10-26 Honeywell International Inc. Thin micromachined structures
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
US6584853B2 (en) 2001-10-12 2003-07-01 Kavlico Corporation Corrosion-proof pressure transducer
SE0103471D0 (sv) * 2001-10-15 2001-10-15 Silex Microsystems Ab Electrum Pressure sensor
US20030183888A1 (en) * 2002-03-28 2003-10-02 Eyal Bar-Sadeh Corrugated diaphragm
US6662663B2 (en) 2002-04-10 2003-12-16 Hewlett-Packard Development Company, L.P. Pressure sensor with two membranes forming a capacitor
DE10323559A1 (de) * 2003-05-26 2004-12-30 Robert Bosch Gmbh Mikromechanische Vorrichtung, Drucksensor und Verfahren
DE10324960B4 (de) * 2003-06-03 2011-08-11 Robert Bosch GmbH, 70469 Kapazitiver Drucksensor
JP2007521324A (ja) * 2003-09-29 2007-08-02 エノス ファーマシューティカルズ， インク． 徐放性ｌ−アルギニン調合物並びにその製造法及び使用法
KR20050075659A (ko) * 2004-01-17 2005-07-21 삼성전자주식회사 디지털 출력을 갖는 압력센서, 그 제조방법 및 그 센싱방법
US20050223783A1 (en) * 2004-04-06 2005-10-13 Kavlico Corporation Microfluidic system
US7028551B2 (en) * 2004-06-18 2006-04-18 Kavlico Corporation Linearity semi-conductive pressure sensor
EP1860418A1 (de) * 2006-05-23 2007-11-28 Sensirion AG Verfahren zur Herstellung eines Drucksensors unter Verwendung von SOI-Wafern
EP2275793A1 (de) * 2006-05-23 2011-01-19 Sensirion Holding AG Drucksensor mit einer Kammer und Herstellungsverfahren dafür
US8081783B2 (en) * 2006-06-20 2011-12-20 Industrial Technology Research Institute Miniature acoustic transducer
US7493822B2 (en) * 2007-07-05 2009-02-24 Honeywell International Inc. Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
US8132465B1 (en) * 2007-08-01 2012-03-13 Silicon Microstructures, Inc. Sensor element placement for package stress compensation
JP4655083B2 (ja) * 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
EP2159558A1 (de) * 2008-08-28 2010-03-03 Sensirion AG Verfahren zur Herstellung eines integrierten Drucksensors
US8637802B2 (en) * 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8316717B2 (en) * 2010-06-29 2012-11-27 Rogue Valley Microdevices, Inc. Wireless self-powered monolithic integrated capacitive sensor and method of manufacture
JP5465634B2 (ja) * 2010-08-03 2014-04-09 ハネウェル・インターナショナル・インコーポレーテッド 溶解ウェーハ製造プロセス、およびスペーシング・メサを持つ支持基板を有する関連マイクロ電気機械デバイス
US9455105B2 (en) * 2010-09-27 2016-09-27 Kulite Semiconductor Products, Inc. Carbon nanotube or graphene based pressure switch
US9450066B2 (en) * 2012-10-12 2016-09-20 Texas State University Vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer and method of forming a VMGFET
US9400288B2 (en) 2012-12-05 2016-07-26 Robert Bosch Gmbh Packaging system and process for inertial sensor modules using moving-gate transducers
EP3367082A1 (de) 2013-11-06 2018-08-29 Invensense, Inc. Drucksensor
EP2871455B1 (de) 2013-11-06 2020-03-04 Invensense, Inc. Drucksensor
TWI588918B (zh) * 2014-04-01 2017-06-21 亞太優勢微系統股份有限公司 具精確間隙機電晶圓結構與及其製作方法
DE102014223926A1 (de) * 2014-11-25 2016-05-25 Robert Bosch Gmbh Verfahren zum Herstellen eines MEMS-Bauelements mit zwei miteinander verbundenen Substraten und entsprechendes MEMS-Bauelement
EP3038177B1 (de) 2014-12-22 2019-12-18 Nokia Technologies Oy Modulare elektronische Vorrichtungen und Verfahren
JP6534548B2 (ja) * 2015-03-31 2019-06-26 長野計器株式会社 センサモジュール
EP3076146B1 (de) 2015-04-02 2020-05-06 Invensense, Inc. Drucksensor
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
DE102018221102B4 (de) * 2018-12-06 2020-06-25 Robert Bosch Gmbh Inertialsensor mit einem beweglichen Detektionselement eines Feldeffekttransistors und Verfahren zum Herstellen desselben
US11326972B2 (en) 2019-05-17 2022-05-10 Invensense, Inc. Pressure sensor with improve hermeticity

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983001536A1 (en) * 1981-10-13 1983-04-28 United Technologies Corp Silicon-glass-silicon capacitive pressure transducer
WO1985005737A1 (en) * 1984-06-04 1985-12-19 Tactile Perceptions, Inc. Semiconductor transducer
GB2242313A (en) * 1990-03-21 1991-09-25 Bosch Gmbh Robert Process for producing multilayer silicon structures
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506502A (en) * 1967-06-05 1970-04-14 Sony Corp Method of making a glass passivated mesa semiconductor device
JPS5855732A (ja) * 1981-09-30 1983-04-02 Hitachi Ltd 静電容量型圧力センサ
US4426768A (en) * 1981-12-28 1984-01-24 United Technologies Corporation Ultra-thin microelectronic pressure sensors
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
US4516316A (en) * 1984-03-27 1985-05-14 Advanced Micro Devices, Inc. Method of making improved twin wells for CMOS devices by controlling spatial separation
US4554726A (en) * 1984-04-17 1985-11-26 At&T Bell Laboratories CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well
US4861420A (en) * 1984-06-04 1989-08-29 Tactile Perceptions, Inc. Method of making a semiconductor transducer
JPS60194827U (ja) * 1984-06-06 1985-12-25 ファナック株式会社 フラツトキ−ボ−ド
US4812888A (en) * 1984-11-11 1989-03-14 Cornell Research Foundation, Inc. Suspended gate field effect semiconductor pressure transducer device
FR2578323B1 (fr) * 1985-03-01 1987-11-20 Metravib Sa Capteur integre de grandeurs mecaniques a effet capacitif et procede de fabrication.
DE3635462A1 (de) * 1985-10-21 1987-04-23 Sharp Kk Feldeffekt-drucksensor
JPS62120051A (ja) * 1985-11-20 1987-06-01 Fuji Electric Co Ltd 半導体装置の製造方法
US4926696A (en) * 1986-11-19 1990-05-22 Massachusetts Institute Of Technology Optical micropressure transducer
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
JP2532149B2 (ja) * 1990-02-06 1996-09-11 本田技研工業株式会社 半導体センサ
US5126812A (en) * 1990-02-14 1992-06-30 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical accelerometer
US5164328A (en) * 1990-06-25 1992-11-17 Motorola, Inc. Method of bump bonding and sealing an accelerometer chip onto an integrated circuit chip
US5103279A (en) * 1990-10-18 1992-04-07 Motorola, Inc. Field effect transistor with acceleration dependent gain
JP2896725B2 (ja) * 1991-12-26 1999-05-31 株式会社山武 静電容量式圧力センサ
US5264693A (en) * 1992-07-01 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Microelectronic photomultiplier device with integrated circuitry
US5264075A (en) * 1992-11-06 1993-11-23 Ford Motor Company Fabrication methods for silicon/glass capacitive absolute pressure sensors
US5316619A (en) * 1993-02-05 1994-05-31 Ford Motor Company Capacitive surface micromachine absolute pressure sensor and method for processing
EP0619495B1 (de) * 1993-04-05 1997-05-21 Siemens Aktiengesellschaft Verfahren zur Herstellung von Tunneleffekt-Sensoren

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983001536A1 (en) * 1981-10-13 1983-04-28 United Technologies Corp Silicon-glass-silicon capacitive pressure transducer
WO1985005737A1 (en) * 1984-06-04 1985-12-19 Tactile Perceptions, Inc. Semiconductor transducer
GB2242313A (en) * 1990-03-21 1991-09-25 Bosch Gmbh Robert Process for producing multilayer silicon structures
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures

Also Published As

Publication number Publication date
GB9520372D0 (en) 1995-12-06
US5578843A (en) 1996-11-26
GB2293920A (en) 1996-04-10
DE19537285A1 (de) 1996-04-18
DE19537285B4 (de) 2007-01-11
US5576251A (en) 1996-11-19

Similar Documents

Publication Publication Date Title
GB2293920B (en) Semiconductor sensor with a fusion bonded flexible structure
GB9406142D0 (en) A sensor
AU4687497A (en) Bonded thermoplastic device
EP0702221A3 (de) Auf einem Chip integrierter Sensor
ZA983860B (en) Flexible bag with selectively-activatible support-engagement feature
EP0550014A3 (en) Dicing-die bonding film
ZA956253B (en) A fusion protein comprising an il4 mutant or variant
HK209896A (en) A wire bonded microfuse
PL327229A1 (en) Flexible union element
TW350490U (en) A honeycomb body assembly
EP0451978A3 (en) Thermoplastic elastomer adhesive
HK1014212A1 (en) Watch having a sensor
GB9302581D0 (en) Electrodynamic transducer with integrated pressure sensor
GB9317946D0 (en) Fibre bonding
GB2289579B (en) Earth bonding device
EP0713916A3 (de) Rekombinantes Beta-Amylase
GB9403465D0 (en) A sensor
GB9710399D0 (en) A glazing with a mechanical element bonded thereto
ZA982048B (en) Heat-sealable adhesive
GB9411271D0 (en) A connecting member
TW335984U (en) The structure of a connection lead
GB2245371B (en) A flow sensor
EP0557703A3 (en) Joining element
AU121977S (en) A structural element
ZA944595B (en) A structural element

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20141005