GB2263335A - Optically aligned electron beam lithography - Google Patents

Optically aligned electron beam lithography Download PDF

Info

Publication number
GB2263335A
GB2263335A GB9204703A GB9204703A GB2263335A GB 2263335 A GB2263335 A GB 2263335A GB 9204703 A GB9204703 A GB 9204703A GB 9204703 A GB9204703 A GB 9204703A GB 2263335 A GB2263335 A GB 2263335A
Authority
GB
United Kingdom
Prior art keywords
electron beam
wafer
lithography
alignment mark
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9204703A
Other languages
English (en)
Other versions
GB9204703D0 (en
Inventor
Ho-Young Kang
Hak Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9204703D0 publication Critical patent/GB9204703D0/en
Publication of GB2263335A publication Critical patent/GB2263335A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
GB9204703A 1992-01-09 1992-03-04 Optically aligned electron beam lithography Withdrawn GB2263335A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR920000208 1992-01-09

Publications (2)

Publication Number Publication Date
GB9204703D0 GB9204703D0 (en) 1992-04-15
GB2263335A true GB2263335A (en) 1993-07-21

Family

ID=19327690

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9204703A Withdrawn GB2263335A (en) 1992-01-09 1992-03-04 Optically aligned electron beam lithography

Country Status (4)

Country Link
JP (1) JPH05259046A (cg-RX-API-DMAC7.html)
GB (1) GB2263335A (cg-RX-API-DMAC7.html)
IT (1) IT1254518B (cg-RX-API-DMAC7.html)
TW (1) TW208757B (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747816A (en) * 1995-07-05 1998-05-05 Hitachi, Ltd. Charged particle beam apparatus
FR2792065A1 (fr) * 1999-04-09 2000-10-13 Centre Nat Etd Spatiales Installation et procede d'observation de deux specimens identiques
EP1091385A1 (en) * 1998-09-30 2001-04-11 Advantest Corporation Electron-beam lithography system and alignment method
US9236224B2 (en) 2013-04-26 2016-01-12 Canon Kabushiki Kaisha Drawing apparatus and method of manufacturing article
DE102019128860A1 (de) * 2019-10-25 2020-11-26 Carl Zeiss Smt Gmbh Verfahren zur Vermessung einer Struktur und Substrat für die Halbleiterlithographie

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1291575A (en) * 1969-07-03 1972-10-04 Texas Instruments Ltd Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby
GB1597203A (en) * 1977-01-20 1981-09-03 Siemens Ag Position setting systems using a scanning beam
US4385838A (en) * 1980-01-19 1983-05-31 Nippon Kogaku K. K. Alignment device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1291575A (en) * 1969-07-03 1972-10-04 Texas Instruments Ltd Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby
GB1597203A (en) * 1977-01-20 1981-09-03 Siemens Ag Position setting systems using a scanning beam
US4385838A (en) * 1980-01-19 1983-05-31 Nippon Kogaku K. K. Alignment device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747816A (en) * 1995-07-05 1998-05-05 Hitachi, Ltd. Charged particle beam apparatus
EP0752715B1 (en) * 1995-07-05 2001-05-30 Hitachi, Ltd. Charged particle beam apparatus
EP1091385A1 (en) * 1998-09-30 2001-04-11 Advantest Corporation Electron-beam lithography system and alignment method
FR2792065A1 (fr) * 1999-04-09 2000-10-13 Centre Nat Etd Spatiales Installation et procede d'observation de deux specimens identiques
US9236224B2 (en) 2013-04-26 2016-01-12 Canon Kabushiki Kaisha Drawing apparatus and method of manufacturing article
DE102019128860A1 (de) * 2019-10-25 2020-11-26 Carl Zeiss Smt Gmbh Verfahren zur Vermessung einer Struktur und Substrat für die Halbleiterlithographie

Also Published As

Publication number Publication date
ITMI920530A0 (it) 1992-03-06
GB9204703D0 (en) 1992-04-15
IT1254518B (it) 1995-09-25
TW208757B (cg-RX-API-DMAC7.html) 1993-07-01
ITMI920530A1 (it) 1993-09-06
JPH05259046A (ja) 1993-10-08

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)