GB2256732B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB2256732B
GB2256732B GB9119222A GB9119222A GB2256732B GB 2256732 B GB2256732 B GB 2256732B GB 9119222 A GB9119222 A GB 9119222A GB 9119222 A GB9119222 A GB 9119222A GB 2256732 B GB2256732 B GB 2256732B
Authority
GB
United Kingdom
Prior art keywords
memory cell
data state
input
cell array
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9119222A
Other languages
English (en)
Other versions
GB2256732A (en
GB9119222D0 (en
Inventor
Jeon-Hyoung Lee
Boo-Yung Huh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9119222D0 publication Critical patent/GB9119222D0/en
Publication of GB2256732A publication Critical patent/GB2256732A/en
Application granted granted Critical
Publication of GB2256732B publication Critical patent/GB2256732B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
GB9119222A 1991-06-14 1991-09-09 Semiconductor memory device Expired - Lifetime GB2256732B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009839A KR940006079B1 (ko) 1991-06-14 1991-06-14 반도체 메모리 장치

Publications (3)

Publication Number Publication Date
GB9119222D0 GB9119222D0 (en) 1991-10-23
GB2256732A GB2256732A (en) 1992-12-16
GB2256732B true GB2256732B (en) 1995-01-04

Family

ID=19315789

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9119222A Expired - Lifetime GB2256732B (en) 1991-06-14 1991-09-09 Semiconductor memory device

Country Status (4)

Country Link
US (1) US5218572A (enExample)
KR (1) KR940006079B1 (enExample)
DE (1) DE4129133C1 (enExample)
GB (1) GB2256732B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258958A (en) * 1989-06-12 1993-11-02 Kabushiki Kaisha Toshiba Semiconductor memory device
US5499292A (en) * 1994-05-06 1996-03-12 At&T Corp. On hook/off hook mechanism for wrist telephone
US5555212A (en) * 1994-09-19 1996-09-10 Kabushiki Kaisha Toshiba Method and apparatus for redundancy word line replacement in a semiconductor memory device
DE69518163T2 (de) * 1994-11-15 2001-03-22 Cirrus Logic, Inc. Schaltungen, systeme und verfahren zur diagnose von fehlerhaften zellen in einer speichereinrichtung
US6209071B1 (en) 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
GB2312974A (en) * 1996-05-10 1997-11-12 Memory Corp Plc Memory replacement
US6046945A (en) * 1997-07-11 2000-04-04 Integrated Silicon Solution, Inc. DRAM repair apparatus and method
US6263448B1 (en) 1997-10-10 2001-07-17 Rambus Inc. Power control system for synchronous memory device
US6097644A (en) 1999-02-22 2000-08-01 Micron Technology, Inc. Redundant row topology circuit, and memory device and test system using same
DE102004006288B4 (de) * 2004-02-09 2006-02-23 Infineon Technologies Ag Integrierter Halbleiterspeicher mit redundanten Speicherzellen sowie Verfahren zum Testen eines integrierten Halbleiterspeichers mit redundanten Speicherzellen und Verfahren zum Betreiben eines integrierten Halbleiterspeichers mit redundanten Speicherzellen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890003691B1 (ko) * 1986-08-22 1989-09-30 삼성전자 주식회사 블럭 열 리던던씨 회로
US5043943A (en) * 1990-06-18 1991-08-27 Motorola, Inc. Cache memory with a parity write control circuit

Also Published As

Publication number Publication date
KR940006079B1 (ko) 1994-07-06
GB2256732A (en) 1992-12-16
DE4129133C1 (enExample) 1992-12-17
GB9119222D0 (en) 1991-10-23
KR930001211A (ko) 1993-01-16
US5218572A (en) 1993-06-08

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20110908