GB2188774B - Method of forming a conductive pattern on a semiconductor surface - Google Patents

Method of forming a conductive pattern on a semiconductor surface

Info

Publication number
GB2188774B
GB2188774B GB8628789A GB8628789A GB2188774B GB 2188774 B GB2188774 B GB 2188774B GB 8628789 A GB8628789 A GB 8628789A GB 8628789 A GB8628789 A GB 8628789A GB 2188774 B GB2188774 B GB 2188774B
Authority
GB
United Kingdom
Prior art keywords
forming
conductive pattern
semiconductor surface
semiconductor
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8628789A
Other languages
English (en)
Other versions
GB2188774A (en
GB8628789D0 (en
Inventor
Subhadra Gupta
Patricia Adzija Palaschak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB8628789D0 publication Critical patent/GB8628789D0/en
Publication of GB2188774A publication Critical patent/GB2188774A/en
Application granted granted Critical
Publication of GB2188774B publication Critical patent/GB2188774B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Optics & Photonics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
GB8628789A 1986-04-02 1986-12-02 Method of forming a conductive pattern on a semiconductor surface Expired GB2188774B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84733986A 1986-04-02 1986-04-02

Publications (3)

Publication Number Publication Date
GB8628789D0 GB8628789D0 (en) 1987-01-07
GB2188774A GB2188774A (en) 1987-10-07
GB2188774B true GB2188774B (en) 1990-10-31

Family

ID=25300378

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8628789A Expired GB2188774B (en) 1986-04-02 1986-12-02 Method of forming a conductive pattern on a semiconductor surface

Country Status (4)

Country Link
JP (1) JPS62232973A (ja)
DE (1) DE3643898A1 (ja)
FR (1) FR2596921A1 (ja)
GB (1) GB2188774B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882435A (en) * 1993-09-30 1999-03-16 Siemens Solar Gmbh Process for the metal coating of solar cells made of crystalline silicon
DE4333426C1 (de) * 1993-09-30 1994-12-15 Siemens Solar Gmbh Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium
AT408158B (de) * 1998-12-28 2001-09-25 Kroener Friedrich Dr Maske zur strukturierten, elektrochemischen bearbeitung eines siliziumplättchens für die solarzellenherstellung
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US20090238994A1 (en) * 2006-01-25 2009-09-24 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for producing a metal contact structure of a solar cell
DE102007005161B4 (de) * 2007-01-29 2009-04-09 Nb Technologies Gmbh Verfahren zur Metallisierung von Substraten
DE102007010872A1 (de) * 2007-03-06 2008-09-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung
CN102439728B (zh) * 2009-04-21 2015-08-19 泰特拉桑有限公司 形成太阳能电池中的结构的方法
DE102009022337A1 (de) * 2009-05-13 2010-11-18 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung eines Substrats
DE102011110171B3 (de) * 2011-08-16 2012-11-29 Rena Gmbh Verfahren zur Ausbildung einer metallischen Leiterstruktur
US9293624B2 (en) * 2012-12-10 2016-03-22 Sunpower Corporation Methods for electroless plating of a solar cell metallization layer
US10242789B2 (en) * 2015-06-16 2019-03-26 Murata Manufacturing Co., Ltd. Method for manufacturing ceramic electronic component, and ceramic electronic component
CN108441843B (zh) * 2018-03-13 2020-02-18 北京科技大学 材料表面金属图案的激光直写预成形光催化镀制备方法
CN113851374B (zh) * 2021-11-05 2024-09-24 南京航空航天大学 提高半导体材料放电加工效率的进电端表面预处理方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB847927A (en) * 1955-10-11 1960-09-14 Philco Corp A method and apparatus for the electrolytic treatment of semiconductive bodies
GB1176889A (en) * 1967-02-14 1970-01-07 Ibm A Method of Forming a Pattern of Conductivity on a Substrate
GB1465567A (en) * 1974-10-17 1977-02-23 Nat Res Dev Deposition of materials onto semiconductors
US4217183A (en) * 1979-05-08 1980-08-12 International Business Machines Corporation Method for locally enhancing electroplating rates
GB2106542A (en) * 1981-07-24 1983-04-13 Inoue Japax Res A method and apparatus for electrodeposition
EP0171129A2 (en) * 1984-02-17 1986-02-12 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US4578157A (en) * 1984-10-02 1986-03-25 Halliwell Michael J Laser induced deposition of GaAs
EP0180101A2 (en) * 1984-11-01 1986-05-07 International Business Machines Corporation Deposition of patterns using laser ablation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL212349A (ja) * 1955-04-22 1900-01-01
US3711325A (en) * 1968-12-13 1973-01-16 Texas Instruments Inc Activation process for electroless nickel plating
DE2028819C3 (de) * 1970-06-11 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Metallkontakts mit einer Kontakthöhe > 10 µ m
US4024029A (en) * 1974-10-17 1977-05-17 National Research Development Corporation Electrodeposition
US4082568A (en) * 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4239789A (en) * 1979-05-08 1980-12-16 International Business Machines Corporation Maskless method for electroless plating patterns
JPS5723416A (en) * 1980-07-17 1982-02-06 Suwa Seikosha Kk Method of forming pattern of insulating substrate
DD157989A3 (de) * 1980-10-10 1982-12-22 Lothar Gierth Verfahren zur strukturierten chemisch-reduktiven metallabscheidung
NL8200561A (nl) * 1982-02-15 1983-09-01 Philips Nv Werkwijze voor het neerslaan van een metaal.
JPS5929474A (ja) * 1982-08-11 1984-02-16 Toshiba Corp 太陽電池

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB847927A (en) * 1955-10-11 1960-09-14 Philco Corp A method and apparatus for the electrolytic treatment of semiconductive bodies
GB1176889A (en) * 1967-02-14 1970-01-07 Ibm A Method of Forming a Pattern of Conductivity on a Substrate
GB1465567A (en) * 1974-10-17 1977-02-23 Nat Res Dev Deposition of materials onto semiconductors
US4217183A (en) * 1979-05-08 1980-08-12 International Business Machines Corporation Method for locally enhancing electroplating rates
GB2106542A (en) * 1981-07-24 1983-04-13 Inoue Japax Res A method and apparatus for electrodeposition
EP0171129A2 (en) * 1984-02-17 1986-02-12 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US4578157A (en) * 1984-10-02 1986-03-25 Halliwell Michael J Laser induced deposition of GaAs
EP0180101A2 (en) * 1984-11-01 1986-05-07 International Business Machines Corporation Deposition of patterns using laser ablation

Also Published As

Publication number Publication date
DE3643898A1 (de) 1987-10-08
JPS62232973A (ja) 1987-10-13
GB2188774A (en) 1987-10-07
GB8628789D0 (en) 1987-01-07
FR2596921A1 (fr) 1987-10-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921202