GB2166062B - Apparatus for drawing dendritic silicon web from silicon melt - Google Patents

Apparatus for drawing dendritic silicon web from silicon melt

Info

Publication number
GB2166062B
GB2166062B GB08524260A GB8524260A GB2166062B GB 2166062 B GB2166062 B GB 2166062B GB 08524260 A GB08524260 A GB 08524260A GB 8524260 A GB8524260 A GB 8524260A GB 2166062 B GB2166062 B GB 2166062B
Authority
GB
United Kingdom
Prior art keywords
silicon
web
dendritic
melt
silicon melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08524260A
Other languages
English (en)
Other versions
GB2166062A (en
GB8524260D0 (en
Inventor
William Clyde Higginbotham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB8524260D0 publication Critical patent/GB8524260D0/en
Publication of GB2166062A publication Critical patent/GB2166062A/en
Application granted granted Critical
Publication of GB2166062B publication Critical patent/GB2166062B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB08524260A 1984-10-29 1985-10-02 Apparatus for drawing dendritic silicon web from silicon melt Expired GB2166062B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66606684A 1984-10-29 1984-10-29

Publications (3)

Publication Number Publication Date
GB8524260D0 GB8524260D0 (en) 1985-11-06
GB2166062A GB2166062A (en) 1986-04-30
GB2166062B true GB2166062B (en) 1988-02-17

Family

ID=24672685

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08524260A Expired GB2166062B (en) 1984-10-29 1985-10-02 Apparatus for drawing dendritic silicon web from silicon melt

Country Status (5)

Country Link
JP (1) JPH0784358B2 (fr)
DE (1) DE3534807A1 (fr)
FR (1) FR2572424B1 (fr)
GB (1) GB2166062B (fr)
IN (1) IN161924B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2198966A (en) * 1986-12-09 1988-06-29 Westinghouse Electric Corp Method of growing silicon dendritic-web crystals
IN168114B (fr) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4747774A (en) * 1987-02-09 1988-05-31 Westinghouse Electric Corp. Conforming crucible/susceptor system for silicon crystal growth
DE3733487C2 (de) * 1987-10-03 1997-08-14 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
EP0340941A1 (fr) * 1988-04-28 1989-11-08 Nkk Corporation Procédé et appareillage pour la production de monocristaux de silicium
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
JP2585123B2 (ja) * 1990-04-13 1997-02-26 東芝セラミックス株式会社 シリコン単結晶の製造方法
BR9203110A (pt) 1992-08-12 1994-03-01 Petroleo Brasileiro Sa Composicao catalitica passivadora para o craqueamento de hidrocarbonetos,alumina e processo de craqueamento catalitico fluido
JP2010208869A (ja) * 2009-03-06 2010-09-24 Sharp Corp 多結晶体または単結晶体の製造装置および製造方法
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の蓋体構造

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
JPS5373481A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Continuous preparation apparatus for sheet crystal
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
JPS58130195A (ja) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置

Also Published As

Publication number Publication date
FR2572424A1 (fr) 1986-05-02
IN161924B (fr) 1988-02-27
GB2166062A (en) 1986-04-30
FR2572424B1 (fr) 1991-01-11
DE3534807A1 (de) 1986-06-05
GB8524260D0 (en) 1985-11-06
JPH0784358B2 (ja) 1995-09-13
JPS61174188A (ja) 1986-08-05

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20011002