GB2165090A - Improving the field distribution in high voltage semiconductor devices - Google Patents

Improving the field distribution in high voltage semiconductor devices Download PDF

Info

Publication number
GB2165090A
GB2165090A GB08424296A GB8424296A GB2165090A GB 2165090 A GB2165090 A GB 2165090A GB 08424296 A GB08424296 A GB 08424296A GB 8424296 A GB8424296 A GB 8424296A GB 2165090 A GB2165090 A GB 2165090A
Authority
GB
United Kingdom
Prior art keywords
regions
polygonal
corners
polygonal regions
body portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB08424296A
Other languages
English (en)
Other versions
GB8424296D0 (en
Inventor
Dr David James Coe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB08424296A priority Critical patent/GB2165090A/en
Publication of GB8424296D0 publication Critical patent/GB8424296D0/en
Priority to EP85201488A priority patent/EP0176146B1/en
Priority to DE8585201488T priority patent/DE3576764D1/de
Priority to JP60210875A priority patent/JPS6188566A/ja
Publication of GB2165090A publication Critical patent/GB2165090A/en
Priority to US07/154,498 priority patent/US4777521A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
GB08424296A 1984-09-26 1984-09-26 Improving the field distribution in high voltage semiconductor devices Withdrawn GB2165090A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB08424296A GB2165090A (en) 1984-09-26 1984-09-26 Improving the field distribution in high voltage semiconductor devices
EP85201488A EP0176146B1 (en) 1984-09-26 1985-09-18 High voltage semiconductor devices
DE8585201488T DE3576764D1 (de) 1984-09-26 1985-09-18 Halbleitervorrichtungen fuer hohe spannungen.
JP60210875A JPS6188566A (ja) 1984-09-26 1985-09-24 高電圧半導体装置
US07/154,498 US4777521A (en) 1984-09-26 1988-02-04 High voltage semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08424296A GB2165090A (en) 1984-09-26 1984-09-26 Improving the field distribution in high voltage semiconductor devices

Publications (2)

Publication Number Publication Date
GB8424296D0 GB8424296D0 (en) 1984-10-31
GB2165090A true GB2165090A (en) 1986-04-03

Family

ID=10567277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08424296A Withdrawn GB2165090A (en) 1984-09-26 1984-09-26 Improving the field distribution in high voltage semiconductor devices

Country Status (5)

Country Link
US (1) US4777521A (https=)
EP (1) EP0176146B1 (https=)
JP (1) JPS6188566A (https=)
DE (1) DE3576764D1 (https=)
GB (1) GB2165090A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9040259B2 (en) 2002-07-16 2015-05-26 Buck Institute For Research On Aging Production of polyketides and other natural products

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0279403A3 (en) * 1987-02-16 1988-12-07 Nec Corporation Vertical mos field effect transistor having a high withstand voltage and a high switching speed
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
JPH0254969A (ja) * 1988-08-19 1990-02-23 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
DE69029180T2 (de) * 1989-08-30 1997-05-22 Siliconix Inc Transistor mit Spannungsbegrenzungsanordnung
US5521105A (en) * 1994-08-12 1996-05-28 United Microelectronics Corporation Method of forming counter-doped island in power MOSFET
US5777360A (en) * 1994-11-02 1998-07-07 Lsi Logic Corporation Hexagonal field programmable gate array architecture
US5631581A (en) * 1995-05-10 1997-05-20 Lsi Logic Corporation Microelectronic integrated circuit including triangular semiconductor "and" gate device
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
DE19823944A1 (de) * 1998-05-28 1999-12-02 Siemens Ag Leistungsdioden-Struktur
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
JP2006019553A (ja) * 2004-07-02 2006-01-19 Matsushita Electric Ind Co Ltd 縦型半導体装置
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US10056457B2 (en) * 2016-05-23 2018-08-21 General Electric Company Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
FR2466101A1 (fr) * 1979-09-18 1981-03-27 Thomson Csf Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
DE3012185A1 (de) * 1980-03-28 1981-10-08 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4414560A (en) * 1980-11-17 1983-11-08 International Rectifier Corporation Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
DE3224618A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit ladungstraegerinjektion
FR2537780A1 (fr) * 1982-12-08 1984-06-15 Radiotechnique Compelec Dispositif mos fet de puissance a structure plane multicellulaire
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9040259B2 (en) 2002-07-16 2015-05-26 Buck Institute For Research On Aging Production of polyketides and other natural products
US9605001B2 (en) 2002-07-16 2017-03-28 Buck Institute For Research On Aging Production of polyketides and other natural products

Also Published As

Publication number Publication date
JPS6188566A (ja) 1986-05-06
US4777521A (en) 1988-10-11
DE3576764D1 (de) 1990-04-26
GB8424296D0 (en) 1984-10-31
JPH0588554B2 (https=) 1993-12-22
EP0176146A3 (en) 1987-04-15
EP0176146B1 (en) 1990-03-21
EP0176146A2 (en) 1986-04-02

Similar Documents

Publication Publication Date Title
EP0176146B1 (en) High voltage semiconductor devices
US8344448B2 (en) Semiconductor device having an edge termination structure and method of manufacture thereof
US4823176A (en) Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
EP0881692B1 (en) Insulated gate semiconductor device and method of manufacturing the same
US6049109A (en) Silicon on Insulator semiconductor device with increased withstand voltage
EP0813250A2 (en) Trench semiconductor device
US6051862A (en) MOS-technology power device integrated structure
US4686551A (en) MOS transistor
US5672528A (en) Method for making semiconductor device having field limiting ring
KR100297705B1 (ko) 낮은 온저항과 높은 항복전압을 갖는 전력용 반도체소자
US7276405B2 (en) Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same
EP0660416A1 (en) Semiconductor device with reduced high voltage termination area and high breakdown voltage
JPH0513387B2 (https=)
US6492691B2 (en) High integration density MOS technology power device structure
US6492663B1 (en) Universal source geometry for MOS-gated power devices
US5872377A (en) Power semiconductor devices having highly integrated unit cells therein
KR20060036393A (ko) 반도체 소자 및 그 형성 방법
JPH01238173A (ja) パワーｍｏｓｆｅｔ
US5291050A (en) MOS device having reduced gate-to-drain capacitance
US7205628B2 (en) Semiconductor device
EP0823735A1 (en) MOS-technology power device
JP2004349384A (ja) 半導体装置
US5243211A (en) Power fet with shielded channels
KR100694327B1 (ko) 반도체 디바이스
JPH10229192A (ja) 半導体スイッチ素子

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)