GB2135510A - Photoelectric conversion devices - Google Patents
Photoelectric conversion devices Download PDFInfo
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- GB2135510A GB2135510A GB08334251A GB8334251A GB2135510A GB 2135510 A GB2135510 A GB 2135510A GB 08334251 A GB08334251 A GB 08334251A GB 8334251 A GB8334251 A GB 8334251A GB 2135510 A GB2135510 A GB 2135510A
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- 238000006243 chemical reaction Methods 0.000 title claims description 78
- 239000004065 semiconductor Substances 0.000 claims abstract description 228
- 239000013078 crystal Substances 0.000 claims abstract description 181
- 239000012535 impurity Substances 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 230000007423 decrease Effects 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract 2
- 239000001257 hydrogen Substances 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 34
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 150000004820 halides Chemical class 0.000 claims description 10
- 150000004678 hydrides Chemical class 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
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- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 125000004437 phosphorous atom Chemical group 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 10
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
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- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
In a non-single-crystal semiconductor PIN photoelectric structure 3 in which the light is incident on the P-type layer 4, the layer 5 is doped with a P-type impurity, such as boron, distributed so that its concentration decreases towards N-type layer 6. This ensures that the whole of the I-type layer 5 is depleted in operation and compensates for N-type doping due to oxygen, carbon or phosphorus atoms incorporated during the deposition process. The structure may be formed with the P-type layer in contact with a transparent electrode 2 on a transparent substrate 1 (as shown) or may be inverted. The non-single crystal material may be Si, SiC or Ge and may be in amorphous, semiamorphous or microcrystalline form. Amorphous Si may contain hydrogen or fluorine. <IMAGE>
Description
SPECIFICATION
Photoelectric conversion devices
Background of the Invention
Field of the Invention
The present invention relates to a photoelectric conversion device which has a non-single-crystal semiconductor laminate member having formed therein at least one PIN junction, and a method for the manufacture of such a photoelectric conversion device.
Description of the Prior Art
A photoelectric conversion device of the type including a non-single-crystal semiconductor laminate member having formed therein at least one PIN junction usually has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-singlecrystal semiconductor laminate member has at least a first non-single-crystal semiconductor layer of a P or N first conductivity type, an I type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer formed on the second nonsingle-crystal semiconductor layer and having a second conductivity type opposite from the first conductivity type.The first, second and third nonsingle-crystal semiconductor layers form one PIN junction.
In this case, for example, the substrate has such a structure that a light-transparent conductive layer is formed as a first conductive layer on a light-transparent insulating substrate body. The first and third non-single-crystal semiconductor layers of the non-single-crystal semiconductor laminate member are P- and Ntype, respectively. Further, the conductive layer on the non-single-crystal semiconductor laminate member is formed as a second conductive layer on the N-type third non-single-crystal semiconductor layer.
While the photoelectric conversion device of such a structure as described above, when light is incident on the side of the light-transparent substrate towards the non-single-crystal semiconductor laminate member, electron-hole pairs are created by the light in the I-type second non-single-crystal semiconductor layer. Holes of the electron-hole pairs thus created pass through the P-type first non-single-crystal semiconductor layer to reach the first conductive layer, and electrons flow through the N-type third nonsingle-crystal semiconductor layer into the second conductive layer. Therefore, photocurrent is supplied to a load which is connected between the first and second conductive layers, thus providing a photoelectric conversion function.
In conventional photoelectric conversion devices of the type described above, however, since the I-type second non-single-crystal semiconductor layer is formed to inevitably contain oxygen with a concentration above 1020 atoms/cm3, or/and carbon with a concentration above 1020 atoms/cm3, or/and phosphorus with a concentration as high as above 5x 1017 atoms/cm3, the I-type non-single-crystal semiconductor layer inevitably contains the impurities imparting the N conductivity type, with far lower concentrations than in the P-type first non-single-crystal semiconductor layer and the Ntype third non-single-crystal semiconductor layer.
In addition, the impurity concentration has such a distribution that it undergoes substantially no variations in the thickwise direction of the layer.
On account of this, in a case where the second non-single-crystal semiconductor layer is formed thick with a view to creating therein a large quantity of electron-hole pairs in response to the incidence of light, a depletion layer, wa hich spreads into the second non-single-crystal semiconductor layer from the Pl junction defined between the P-type first and the l-type second non-single-crystal semiconductor layers, and a depletion layer, which spreads into the second non-single-crystal semiconductor layer from the
NI junction defined between the N-type third and the I-type second non-single-crystal semiconductor layers, are not linked together.In consequence, the second non-single-crystal semiconductor layer has, over a relatively wide range thickwise thereof at the central region in that direction, a region in which the bottom of the conduction band and the top of the valence band of its energy band are not inclined in the directions in which to drift the holes and electrons towards the first and third non-single-crystal semiconductor layers, respectively. Therefore, the holes and electrons of the electron-hole pairs created by the incident light in the second nonsingle-crystal semiconductor layer, in particular, the electrons and holes generated in the central region of the second layer in its thickwise direction, are not effectively directed to the first and third non-single-crystal semiconductbr layers, respectively.
Accordingly, the prior art photoelectric conversion devices of the above-described structure have the defect that even if the second non-single-crystal semiconductor layer is formed thick for creating a large quantity of electrqn-.hole pairs in response to incident light, a high photoelectric conversion efficiency cannot be obtained.
Further, even if the I-type second non-singlecrystal semiconductor layer is thick enough to permit that the depletion layer extending into the second non-single-crystal semiconductor layer from the Pl junction between the P-type first nonsingle-crystal semiconductor layer on the side on which light is incident and the I-type second nonsingle-crystal semiconductor layer formed on the first semiconductor layer and the depletion layer extending into the second non-single-crystal semiconductor layer from the NI junction between the N-type third non-single-crystal semiconductor layer on the side opposite from the side of the incidence of light and the I-type second nonsingle-crystal semiconductor layer are linked together, the expansion of the former depletion layer diminishes with the lapse of time for light irradiation by virtue of a known light irradiation effect commonly referred to as the Staebler
Wronsky effect, because the I-type non-singlecrystal semiconductor layer forming the Pl junction contains the impurities which impart the
N conductivity type as mentioned previously.
Finally, the abovesaid depletion layers are disconnected from each other. In consequence, there is formed in the central region of the second non-single-crystal semiconductor layer in the thickwise direction thereof a region in which the bottom of the conduction band and the top of the valence band of the energy band are not inclined in the directions in which the holes and electrons of the electron-hole pairs created by the incidence of light are drifted towards the first and third nonsingle-crystal semiconductor layers, respectively.
Accordingly, the conventional photoelectric conversion devices of the abovesaid construction have the defect that the photoelectric conversion efficiency is impaired by the long-term use of the devices.
Summary of the Invention
It is therefore an object of the present invention to provide a novel photoelectric conversion device which is able to achieve a far higher photoelectric conversion efficiency than that obtainable with the conventional devices described above.
Another object of the present invention is to provide a novel photoelectric conversion device the photoelectric conversion efficiency of which is hardly or only slightly lowered by the Staebler
Wronsky effect even if it is used for a long period of time.
Yet another object of the present invention is to provide a novel method which permits easy manufacture of the photoelectric conversion device having the abovesaid excellent features.
In accordance with n aspect of the present invention, the first (or third) non-single-crystal semiconductor layer of the non-single-crystal laminate member is a layer on the side on which light is incident and has the P conductivity type, and the I-type second non-single-crystal semiconductor layer has introduced therein an impurity for imparting thereto the P conductivity type, which is distributed so that the impurity concentration continuously lowers towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.
In this case, for example, the substrate is light transparent and, accordingly, the first non-singlecrystal semiconductor layer is disposed on the side where light is incident. The first and third non-single-crystal semiconductor layers are Pand N-type, respectively, and the I-type second non-single-crystal semiconductor layer has introduced therein an impurity for imparting thereto the P-type conductivity, such as boron, so that its concentration in the region adjacent the first non-single-crystal semiconductor layer is higher than the concentration in the region adjacent the third non-single-crystal semiconductor layer.
On account of this, even if the I-type second non-single-crystal semiconductor layer is formed relatively thick for creating therein a large quantity of electron-hole pairs in response to the incidence of light, there are joined together the depletion layer extending into the second the second non-single-crystal semiconductor layer from the Pl junction between the first and second non-single-crystal semiconductor layers and the depletion layer extending into the second nonsingle-crystal layer from the NI junction between the third and second non-single-crystal semiconductor layers. Accordingly, the holes and electrons which are produced in the central region of the second non-single-crystal semiconductor layer in its thickwise direction are also effectively drifted towards the first and third non-singlecrystal semiconductor layers, respectively.
Moreover, even if the I-type second non-singlecrystal semiconductor layer contains impurities which imparts thereto the N-type conductivity, because it is formed to inevitably contain oxygen and/or carbon and phosphorus in large quantities as described previously, boron which imparts the
P-type conductivity, introduced in the second non-single-crystal semiconductor layer, combines with oxygen, oriand carbon, or/and phosphorus.
Besides, the P-type impurity introduced in the second non-single-crystal semiconductor layer has a high concentration in the region thereof adjacent the P-type first non-single-crystal semiconductor layer, that is, on the side of the Pl junction. Therefore, the expansion of the depletion layer spreading into the second non-single-crystal semiconductor layer from the Pl junction between the first and second non-single-crystal semiconductor layers is scarcely or only slightly diminished by the light irradiation effect (the Staebler-Wrorisky effect).
Accordingly, the photoelectric conversion device of the present invention retains a high photoelectris conversion efficiency, even if used for a long period of time.
In accordance with another aspect of the present invention, the second non-single-crystal semiconductor layer, which has introduced thereinto an impurity, which imparts the P-type conductivity, with such a distribution that its concentration continuously lowers 'tdwards the Ntype third (or first) non-single-crystal semiconductor layer in the thickwise direction of the second layer, can easily be formed, through a
CVD (Chemical Vapor Deposition) method using a semiconductor material gas and an impurity material gas for imparting the P-type conductivity, only by continuously decreasing (or increasing) the concentration of the raw impurity material gas relative to the semiconductor material gas with the lapse of time.
Accordingly, the manufacturing method of the present invention allows ease in the fabrication of the photoelectric conversion device of the present invention which possesses the aforementioned advantages.
Other objects, features and advantages of the present invention will become more fully apparent from the detailed description taken in conjunction with the accompanying drawings.
Brief Description of the Drawings
Figs. 1 A to E are sectional views schematically illustrating a sequence of steps involved in the manufacture of a photoelectric conversion device in accordance with an embodiment of the present invention;
Fig. 2A is a sectional view schematically illustrating a first embodiment of the photoelectric conversion device by the manufacturing method shown in Fig. 1:
Fig. 2B is a graph showing the concentration distributions of impurities introduced into first, second and third non-single-crystal semiconductor layers of the photoelectric conversion device depicted in Fig. 2A;
Fig. 2C is a graph showing the energy band of the photoelectric conversion device shown in Fig.
2A;
Fig. 3 is a graph showing the voltage V (volt)current density I (mA/cm2) characteristic of the photoelectric conversion device of Fig. 2, in comparison with such a characteristic of a conventional photoelectric conversion device;
Fig. 4 is a graph showing variations (%) in the photoelectric conversion efficiency of the photoelectric conversion device of the present invention, shown in Fig. 2, in comparison with a conventional photoelectric conversion device;
Fig. 5A is a sectional view schematically illustrating a second embodiment of the photoelectric conversion device of the present invention;
Fig. 5B is a graph showing concentration distributions of impurities introduced into first, second and third non-single-crystal semiconductor layers of the second embodiment of the present invention;;
Fig. 6A is a sectional view schematically illustrating a third embodiment of the photoelectric conversion device of the present invention; and
Fig. 6B is a graph showing the concentration distributions of impurities introduced into first, second and third non-single-crystal semiconductor layers of the photoeiectric conversion device shown in Fig. 6A.
Description of the Preferred Embodiments
A description will be given of, with reference to
Figs. 1 and 2, of a first embodiment of the photoelectric conversion device of the present invention, along with the manufacturing method of the present invention.
The manufacture of the photoelectric conversion device starts with the preparation of an insulating, light-transparent substrate 1 as of glass (Fig. 1).
A light-transparent conductive layer 2 is formed on the substrate 1 (Fig. 1 B).
The conductive layer 2 is formed of, for example, a tin oxide, or a light-transparent conductive material consisting principally of a tin oxide. The conductive layer 2 is formed by, for example, a known vacuum evaporation method to a thickness of, for instance, 0.1 to 0.2 ,um.
Next, a non-single-crystal semiconductor laminate member 3 is formed on the conductive layer 2 (Fig. 1C).
The non-single-crystal semiconductor laminate member 3 has such a structure that a P-type nonsingle-crystal semiconductor layer 4, an I-type non-single-crystal semiconductor layer 5 and an
N-type non-single-crystal semiconductor layer 6 are sequentially formed in this order. These nonsingle-crystal semiconductor layers 4, 5 and 6 form an PIN junction.
The non-single-crystal semiconductor layer 4 of the non-single-crystal semiconductor laminate member 3 is formed of, for example, Si, SixC 1-x (where 0 < x < 1,for instance, x=0.8) or Ge in an amorphous, semiamorphous or microcrystalline
Form. The non-single-crystal semiconductor layer 4 is, for example, 100 angstroms thick.
The non-single-crystal semiconductor layer 4 is formed by a CVD method which employs a semiconductor material gas composed of a hydride or halide of a semiconductor, as as Si, Six~, or Ge, and an impurity material gas composed of a hydride or halide of a P-type impurity, for instance, diborane (B2H6), such as a
CVD method employing or not employing a glow discharge (plasma), or a CVD method employing light. In this case, the non-single-crystal semiconductor layer 4 has introduced therein the
P-type impurity (boron) in a concentration as high as 1 x1019 to 6x 1020 atoms/cm3, as shown in Fig.
2B.
The non-single-crystal semiconductor layer 5 is formed of, for instance, amorphous or semiamorphous silicon, and has a thickness of, for example, 3 to 0.8 ym, in particular, 0.5 ym.
The non-single-crystal semiconductor layer 5 is formed by a CVD method which uses a semiconductor material gas composed of a hydride or halide of silicon, for example, SinH2n+2 (where n is greater than or equal to 1), or SIF, (where m is greater than or equal to 2), and an impurity material gas composed of a hydride or halide of a P-type impurity, for instance, diborane (B2H6), such as a CVD method employing or not employing a glow discharge (plasma), or a CVD method employlng light.In this case, by decreasing the concentration of the impurity material gas relative to the concentration of the semiconductor material gas within a range less than 5 ppm with the lapse of time, the non-singlecrystal semiconductor layer 5 is formed to have introduced thereinto the P-type impurity (boron) the concentration of which linearly and continuously lowers in the thickwise direction of the layer towards the non-single-crystal semiconductor layer 4 as shown in Fig. 2B. The concentration of the P-type impurity in the nonsingle-crystal semiconductor layer 5 is high on the side of the non-single-crystal semiconductor layer 4 as compared with the impurity concentration on the side of the non-singlecrystal semiconductor layer 6.The ratio of the impurity concentration in the layer 5 at one end thereof adjacent the layer 6 to the concentration at the other end adjacent the layer 4 is 1/1 O to 1/100, preferably, 1/20 to 1/40. In practice, the
P-type impurity (boron) has a concentration of 2x 1015 to 2x 1017 atoms/cm3 at the end of the layer 5 adjacent the layer 4 and a concentration below 1 x 1015 atoms/cm3 at the end of the layer 5 adjacent the layer 6.
The non-single-crystal semiconductor layer 5 is formed by the abovesaid CVD method. In this case, the semiconductor material gas is one that is obtained by passing a raw semiconductor material gas through a molecular sieve or zeolite which adsorbs oxygen, or/and carbon or/and phosphorus. Accordingly, the non-single-crystal semiconductor layer 5 is formed to contain oxygen with a concentration as low as 5 x 1018 atoms/cm3, or/and carbon with a concentiation as low as 4x 1015 atoms/cm3, or/and phosphorus with a concentration as low as 5x 1015 atoms/cm3.
The non-single-crystal semiconductor layer 6 formed of, for instance, microcrystalline silicon, and has a thickness of, for example, 100 to 300 angstroms.
The non-single-crystal semiconductor layer 6 is formed by a CVD method which employs a semiconductor material gas composed of a hydride or halide of silicon, for example, SinH2n+2 (where n is greater than or equal to 1) or SiFm (where m is greater than or equal to 2), and an impurity material gas composed of a hydride or halide of an N-type impurity, for instance, phosphine (PH3), such as 3 CVD method employing or not employing d glow discharge (plasma), or a CVD method employing light. In this case, the non-.s?ngle-crystal semiconductor layer 6 has intlodlJ^ad thereinto the N-type impurity (phosphorus) with a concentration of 1x10'9 to 6x 1020 atoms/cm3, as shown in Fig. 2.
Next, a conductive layer 7 is formed on the non-single-crystal semiconductor laminate member 3 made up of the non-single-crystal semiconductor layers 4, 5 and 6, that is, on the non-single-crystal semiconductor layer 6 (Fig.
1D).
The conductive layer 7 has such a structure that a light-transparent conductive layer 8 formed of, for example, a tin oxide or a light-transparent conductive material consisting principally of the tin oxide, and a reflective conductive layer 9 formed of a metal, such as aluminum, silver or the like, are formed in this order. In this case, the conductive layer 8 is formed 900 to 1300 angstroms by means of, for example, vacuum evaporation, and the conductive layer 9 is also formed by the vacuum evaporation.
In the manner described above, the first embodiment of the photoelectric conversion device of the present invention shown in Fig. 2A is manufactured.
With the photoelectric conversion device shown in Fig. 2A, when light 10 is incident on the side of the substrate 1 towards the non-singlecrystal semiconductor laminate member 3, electron-hole pairs are created in the I-type nonsingle-crystal semiconductor layer 5 in response to the light 10. The holes of the electron-hole pairs thus produced flow through the P-type nonsingle-crystal semiconductor layer 4 into the light-transparent conductive layer 2, and the electrons flow through the N-type non-singlecrystal semiconductor layer 6 into the conductive layer 7. Therefore, photocurrent is supplied to a load which is connected between the conductive layers 2 and 7, thus providing the photoelectric conversion function.
-In this case, the I-type non-single-crystal semiconductor layer 5 has introduced thereinto the P-type impurity (boron) which is distributed so that the impurity concentration continuously decreases towards the non-single-crystal semiconductor layer 6 in the thickwise direction of the layer 5, as shown in Fig. 2B.On account of this, even if the I-type non-single-crystal semiconductor layer 5 is formed thick for generating therein a large quantity of
electron-hole pairs in response to the incident of light, a depletion layer (not shown) which extends into the non-single-crystal semiconductor layer 5 from a Pl junction 11 between the P-type nonsingle-crystal semiconductor layer 4 and the 1- type non-single-crystal semiconductor layer 5 and a depletion (not shown) layer which extends into the non-single-crystal semiconductor layer 5 from an NI junction 12 between the N-type non-singlecrystal semiconductor layer 6 and the non-singlecrystal semiconductor layer 5 are joined together.
Therefore, the I-type non-single-crystal semiconductor layer 5, as viewed from the bottom of the conduction band and at the top of the valence bands of its energy band, has such a gradient that effectively drifts holes and electrons towards the non-single-crystal semiconductor layers 4 and 6, respectively.
Accordingly, the photoelectric conversion device of the present invention, shown in Fig. 2A, achieves a higher photoelectric conversion efficiency than do the conventional photoelectric conversion devices.
By the way, according to a photoelectric conversion device corresponding to the conventional one that is identical in construction with the photoelectric conversion device of the present invention shown in Fig. 2A, except that the concentration of the N-type impurity in the 1- type non-single-crystal semiconductor layer 5 is about 1015 atoms/cm3 which is far lower than the impurity concentrations in the P-type and I-type non-single-crystal semiconductor layers 4 and 6
because the I-type non-single-crystal semiconductor layer 5 is formed to inevitably contain oxygen, or/and carbon, or/and phosphorus
in large quantities, as referred to previously, such a voltage V (volt)-current density l(mA/'cm2) characteristic as indicated by a curve 30 in Fig. 3 was obtained.Accordingly, an open-circuit voltage was 0.89 V, a short-circuiting current density 1 16.0 mA/cm2, a file factor 61% and the photoelectric conversion efficiency about 8.7%. In
contrast thereto, according to the photoelectric conversion device of the present invention shown
in Fig. 2A, such a voltage V-current density I
characteristic as indicated by a curve 31 in Fig. 3 was obtained. Accordingly, the open-circuit voltage V was 0.92 V which is higher than was obtained with the abovesaid device corresponding to the prior art device; the current density I was 19.5 mA/cm2; the file factor was 68%: and the photoelectric conversion efficiency was about 12.2%.Incidentally, these results were obtained under the condition that the photoelectric conversion devices, each having the non-single-crystal semiconductor laminate
member 3 of a 1.05 cm2 area, were exposed to irradiation bV light with an intensity AM 1 (100
mW/cm2).
In the case of the photoelectric conversion
device of the present invention shown in Fig. 2A,
since the I-type non-single-crystal semiconductor
layer 5 has introduced thereinto the boron as the
P-type impurity the boron combines with the oxygen or/and carbon or/and phosphorus -inevitably contained in the non-single-crystal semiconductor layer 5. In addition, the
concentration of the P-type impurity (boron) is
high on the side of the Pl junction 1 1, that is, on the side of the P-type non-single-crystal semiconductor layer 4.Accordingly, the expansion of the depletion layer extending into the I-type non-single-crystal semiconductor layer
5 from the Pl junction 11 between the P-type non-single-crystal semiconductor layer 4 and the
I-type non-single-crystal semiconductor layer 5 is hardly or only slightly diminished by the light irradiation effect (the Staebler-Wronsky effect).
For this reason, according to the photoelectric cosivarsion device of the present invention, the aforesaid high photoelectric conversion efficiency
is hardly impaired by the long-term use.
By the way, according to the aforesaid photoelectric conversion device corresponding to the prior art one which provided the voltage Vcurrent density I characteristic indicated by the curve 30 in Fig. 3, variations (%) in the photoelectric conversion efficiency relative to the
light irradiation time T (hr) was as indicated by a
curve 40 in Fig. 4. In contrast thereto, in the case of the photoelectric conversion device of the present invention, the photoelectric conversion efficiency varied with the light irradiation time T as indicated by a curve 41 in Fig. 4. That is, the photoelectric conversion efficiency slightly increased in an early stage and, thereafter, it decreased only very slightly with time. These results were also obtained under the same condition mentioned previously in connection with Fig. 3.
As described above, the first embodiment of the photoelectric conversion device of the present invention possesses the advantage that it provides a high photoelectric conversion efficiency than do the conventional photoelectric conversion devices, even if used for a long period of time.
Further, the manufacturing method of the present invention shown in Fig. 1 employs a series of such simple steps of forming the conductive layer 2 on the substrate 1, forming the non-single-crystal semiconductor layers 4, 5 and 6 on the conductive layer 2 through the CVD method to provide the non-single-crystal semiconductor laminate member 3 and forming the conductor layer 7 on the non-single-crystal semiconductor laminate member 3.The I-type non-single-crystal semiconductor layer 5 is formed by the CVD method using a semiconductor material gas and a P-type impurity (boron) gas and, in this case, only by continuously changing the concentration of the impurity material gas relative to the concentration of the semiconductor material gas with the lapse of time, the P-type impurity is introduced into the layer 5 with such a concentration distribution that its concentration continuously decreases towards the non-single-crystal semiconductor layer 6 in the thickwise direction of the layer 5.
Accordingly, the manufacturing method of the present invention allows ease in the fabrication of the photoelectric conversion device of the present invention which has the aforementioned advantages.
Incidentally, the first embodiment illustrated in
Fig. 2 shows the case in which the impurity contained in the I-type non-single-crystal semiconductor layer 5 has such a concentration distribution as shown in Fig. 2B in which the concentration linearly and continuously drops towards the non-single-crystal semiconductor layer 6.
As will be appreciated from the above, however, even if the impurity introduced in the 1- type non-single-crystal semiconductor layer 5 has such a concentration that the impurity concentration drops stepwise and continuously towards the non-single-crystal semiconductor layer 6 as shown in Fig. 5 which illustrates a second embodiment of the present invention, and even if the impurity in the layer 5 has such a concentration distribution that the impurity concentration lowers non-linearily and continuously towards the layer 6 in a manner to obtain such a concentration distribution that the impurity concentration abruptly drops in the end portion of the layer 5 adjacent the layer 6 as shown in Fig. 6 which illustrates a third embodiment of the present invention, the photoelectric conversion device of the present invention produces the same excellent operation
and effects as are obtainable with the
photoelectric conversion device shown in Fig. 2.
Further, the foregoing description has been
given of the case where light is incident on the
photoelectric conversion device from the side of
the substrate 1 and, accordingly, the non-single
crystal semiconductor layer 4 of the non-single
crystal semiconductor laminate member 3 on the
side on which the light is incident is P-type.
But, also in a case where the photoelectric conversion device is arranged to be exposed to
light on the side opposite from the substrate 1, the non-single-crystal semiconductor layer 6 of the non-single-crystal semiconductor laminate member 3 on the side of the incidence of light is
P-type, the non-single-crystal semiconductor layer 4 on the side of the substrate 1 is N-type and the non-single-crystal semiconductor layer 5 has introduced thereinto a P-type impurity (boron) which is distributed so that the impurity concentration continuously decreases towards the non-single-crystal semiconductor layer 4 in the thickwise direction of the layer 5, the same excellent operation and effects as described previously can be obtained, as will be understood from the foregoing description. In this case, however, the conductive layer 7 must be substituted with a light-transparent one. The substrate 1 and the conductive layer 2 need not be light-transparent.
While in the foregoing the non-single-crystal semiconductor laminate member 3 has one PIN junction, it is also possible to make the laminate member 3 have two or more PIN junctions and to form each of two or more I-type non-singlecrystal semiconductor layers so that the P-type impurity introduced therein may have the aforesaid concentration distribution.
It will be apparent that many modifications and variations may be effected without departing from the scope of the novel concepts of the present invention.
Claims (22)
1. A photoelectric conversion device comprising:
a substrate having a conductive surface;
a non-single-crystal semiconductor laminate
member formed on the substrate; and
a conductive layer formed on the non-singlecrystal semiconductor laminate member;
wherein the non-single-crystal semiconductor laminate member has at least a first non-singlecrystal semiconductor layer of a P or N first conductivity type, an I-type second non-singlecrystal semiconductor layer formed on the first non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type opposite the first conductivity type and formed on the second nonsingle-crystal semiconductor layer, the first, second and third non-single-crystal
semiconductor layers forming one PIN junction;;
wherein the first non-single-crystal semiconductor layer is a layer disposed on the side on which light is incident, and is P-type; and
wherein the second non-single-crystal semiconductor layer has introduced thereinto a Ptype impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer.
2. A photoelectric conversion device comprising:
a substrate having a conductive surface;
a non-single-crystal semiconductor laminate member formed on the substrate; and
a conductive layer formed on the non-singlecrystal semiconductor laminate member;
wherein the non-single-crystal semiconductor laminate member has at least a first non-singlecrystal semiconductor layer of a P or N first conductivity type, an I-type second non-singlecrystal semiconductor layer formed on the first non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type opposite the first conductivity type and formed on the second nonsingle-crystal semiconductor layer, the first, second and third non-single-crystal semiconductor layers forming one PIN junction;;
wherein the third non-single-crystal semiconductor layer is a layer disposed on the side on which light is incident, and is P-type; and
wherein the second non-single-crystal semiconductor layer has introduced thereinto a Ptype impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer.
3. A photoelectric conversion device according to claim 1 or 2, wherein the ratio between impurity concentrations in the second non-singlecrystal semiconductor layer at both ends thereof adjoining the first and third non-single-crystal semiconductor layers, respectively, is in the range of 1/10to 1/100.
4. A photoelectric conversion device according to claim 1 or 2, wherein the seconditnon-single- crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer.
5. A photoelectric conversion device according to claim 1 or 2, wherein the second non-singlecrystal semiconductor layer contains oxygen only less than 5x 1019 atoms/cm3, or/and carbon only less thari 4x 1 ot8 atoms/cm3, or/and phosphorus only less than 5x 1015 atoms/cm3.
6. A photoelectric conversion device according to claim 1, wherein the substrate is lighttransparent.
7. A photoelectric conversion device according to claim 1 or 2, wherein the P-type impurity introduced into the first non-single-crystal semiconductor layer is boron.
8. A photoelectric conversion device according to claim 1, wherein the concentration of the Ptype impurity in the first non-single-crystal semiconductor layer is above 1019 atoms/cm3, wherein the P-type impurity introduced into the second non-single-crystal semiconductor layer is boron and has a concentration in the range of 2x 1015 to 2x 1017 atoms/cm3 at one end of the second layer adjoining the first non-single-crystal semiconductor layer, and wherein the ratio of the concentration of the P-type impurity in the second non-single-crystal semiconductor layer at the other end thereof adjoining the third non-singlecrystal semiconductor to the P-type impurity concentration in the second layer at the said one end thereof is in the range of 1/10 to 1/100.
9. A photoelectric conversion device according to claim 8, wherein the first non-single-crystal semiconductor layer has a larger energy band gap than does the second non-single-crystal semiconductor layer.
10. A photoelectric conversion device according to claim 9, wherein the first non-singlecrystal semiconductor layer is formed of SixC 1-x (where 0 < x < 1), and wherein the second nonsingle-crystal semiconductor layer is formed of silicon.
11. A photoelectric conversion device according to claim 2, wherein the third nonsingle-crystal semiconductor layer has a P-type impurity concentration higher than 1018 atoms/cm3, wherein the P-type impurity introduced into the second non-single-crystal semiconductor layer is boron and has a concentration of 2 x 1015 to 2 x 1017 atoms/cm3 at one end of the second layer adjoining the third non-single-crystal semiconductor layer, and wherein the ratio of the P-type impurity concentration in the second non-single-crystal semiconductor layer at the other end thereof adjoining the first non-single-crystal semiconductor layer to the P-type impurity concentration in the second layer at the said one end thereof is in the range of 1/10 to 1/100.
12. A photoelectric conversion device according to claim 1 wherein the third nonsingle-crystal semiconductor layer has a larger energy band gap than does the second nonsingle-crystal semiconductor layer.
13. A photoelectric conversion device according to claim 12, wherein the third nonsingle-crystal semiconductor layer is formed of Six~~ (where 0 < x < 1), and wherein the second non-single-crystal semiconductor layer is formed of silicon.
14. A method for the manufacture of a photoelectric conversion device which is provided with a non-single-crystal semiconductor laminate member formed by sequentially laminating, on a substrate having a conductive surface, a first nonsingle-crystal semiconductor layer having a P or N first conductivity type, and I-type non-singlecrystal semiconductor layer and a third nonsingle-crystal semiconductor layer having a second conductivity type opposite the first conductivity type, the method including the steps of::
forming the first non-single-crystal semiconductor layer as a P-type non-singlecrystal semiconductor layer by a CVD method;
forming the second non-single-crystal semiconductor layer, by a CVD method using a semiconductor material gas and a P-type impurity material gas while controlling the supply of the Ptype impurity material gas to continuously decrease with time its concentration relative to the concentration of the semiconductor material gas, as a non-single-crystal semiconductor layer which has introduced thereinto the P-type impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and
forming the third non-single-crystal semiconductor layer as an N-type non-singlecrystal semiconductor layer by a CVD method.
15. A manufacturing method according to
claim 14, wherein the semiconductor material gas is a hydride or halide of silicon and the impurity
material gas is a hydride or halide of boron.
16. A manufacturing method according to claim 1 6, wherein the concentration of the impurity material gas relative to the concentration of the semiconductor material gas is continuously decreased with time within a range of less than 5
ppm.
1 7. A method for the manufacture of a
photoelectric conversion device which is provided with a non-single-crystal semiconductor laminate
member formed by sequentially laminating, on a substrate having a conductive surface, a first nonsingle-crystal semiconductor layer having a P or N first conductivity type, and I-type non-singlecrystal semiconductor layer and a third non
single-crystal semiconductor layer having a second conductivity type opposite the first
conductivity type, the method including the steps of::
forming the first non-single-crystal semiconductor layer as a N-type non-singlecrystal semiconductor layer by a CVD method;
forming the second non-single-crystal semiconductor layer, by a CVD method using a semiconductor material gas and a P-type impurity
material gas while controlling the supply of the Ptype impurity material gas to continuously increase with time its concentration relative to the concentration of the semiconductor material gas, as a non-single-crystal semiconductor layer which
has introduced thereinto the P-type impurity which is distributed so that its concentration
continuously decreases towards the first nonsingle-crystal semiconductor layer in the thickwise direction of the second layer; and
forming the third non-single-crystal
semiconductor layer as a P-type non-singlecrystal semiconductor layer by a CVD method.
18. A manufacturing method according to claim 17, wherein the semiconductor material gas
is a hydride or halide of silicon and the impurity material gas is a hydride or halide of boron.
19. A manufacturing method according to claim 1 8, wherein the concentration of the impurity material gas relative to the concentration of the semiconductor material gas is continuously increased with time within a range of less than 5 ppm.
20. A PIN junction photoelectric conversion device wherein the I-type layer includes a P-type impurity in a graded concentration which is greater adjacent the P-type layer than adjacent the N-type layer.
21. A method of manufacturing a device according to claim 20 wherein the I-type layer is formed by deposition from a semiconductor material vapour and a P-type impurity material vapour, and the concentration of the impurity material vapour relative to the semiconductor material vapour is varied with time so as to obtain the graded P-type impurity concentration in the 1- type layer.
22. A PIN junction photoelectric conversion device or a method of manufacturing the same, substantially as herein described with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228159A JPH065765B2 (en) | 1982-12-23 | 1982-12-23 | Photoelectric conversion device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8334251D0 GB8334251D0 (en) | 1984-02-01 |
| GB2135510A true GB2135510A (en) | 1984-08-30 |
| GB2135510B GB2135510B (en) | 1987-09-23 |
Family
ID=16872151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08334251A Expired GB2135510B (en) | 1982-12-23 | 1983-12-22 | Photoelectric conversion devices |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH065765B2 (en) |
| GB (1) | GB2135510B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0172484A2 (en) * | 1984-08-07 | 1986-02-26 | Siemens Aktiengesellschaft | Amorphous silicon p-i-n solar cell |
| EP0180781A2 (en) * | 1984-10-05 | 1986-05-14 | Fuji Electric Corporate Research And Development Ltd. | Process for producing amorphous silicon solar cells and product produced thereby |
| EP0189636A1 (en) * | 1984-11-02 | 1986-08-06 | Energy Conversion Devices, Inc. | Fluorinated p-doped microcrystalline semiconductor alloys and method of preparation |
| EP0200874A1 (en) * | 1985-04-19 | 1986-11-12 | Siemens Aktiengesellschaft | Process for making a surface grating having a specified operating constant on a recessed surface of a mesa structure |
| EP0304145A2 (en) * | 1987-08-19 | 1989-02-22 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| US4980736A (en) * | 1987-03-23 | 1990-12-25 | Hitachi, Ltd. | Electric conversion device |
| CN106057929A (en) * | 2016-05-31 | 2016-10-26 | 西安工程大学 | Silicon carbide-based PIN-structure near infrared photodiode and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090155952A1 (en) * | 2007-12-13 | 2009-06-18 | Emcore Corporation | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
| JP5583196B2 (en) * | 2011-12-21 | 2014-09-03 | パナソニック株式会社 | Thin film solar cell and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS571272A (en) * | 1980-06-02 | 1982-01-06 | Fuji Electric Co Ltd | Manufacture of amorphous silicon solar cell |
| JPS57187972A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Manufacture of solar cell |
-
1982
- 1982-12-23 JP JP57228159A patent/JPH065765B2/en not_active Expired - Lifetime
-
1983
- 1983-12-22 GB GB08334251A patent/GB2135510B/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0172484A2 (en) * | 1984-08-07 | 1986-02-26 | Siemens Aktiengesellschaft | Amorphous silicon p-i-n solar cell |
| EP0172484A3 (en) * | 1984-08-07 | 1986-07-16 | Siemens Aktiengesellschaft | Amorphous silicon p-i-n solar cell |
| EP0180781A2 (en) * | 1984-10-05 | 1986-05-14 | Fuji Electric Corporate Research And Development Ltd. | Process for producing amorphous silicon solar cells and product produced thereby |
| EP0180781A3 (en) * | 1984-10-05 | 1986-10-15 | Fuji Electric Co., Ltd. | Process for producing amorphous silicon solar cells and product produced thereby |
| EP0189636A1 (en) * | 1984-11-02 | 1986-08-06 | Energy Conversion Devices, Inc. | Fluorinated p-doped microcrystalline semiconductor alloys and method of preparation |
| EP0200874A1 (en) * | 1985-04-19 | 1986-11-12 | Siemens Aktiengesellschaft | Process for making a surface grating having a specified operating constant on a recessed surface of a mesa structure |
| US4980736A (en) * | 1987-03-23 | 1990-12-25 | Hitachi, Ltd. | Electric conversion device |
| EP0304145A2 (en) * | 1987-08-19 | 1989-02-22 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| EP0304145A3 (en) * | 1987-08-19 | 1990-03-21 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| CN106057929A (en) * | 2016-05-31 | 2016-10-26 | 西安工程大学 | Silicon carbide-based PIN-structure near infrared photodiode and manufacturing method thereof |
| CN106057929B (en) * | 2016-05-31 | 2018-03-23 | 西安工程大学 | A kind of silicon carbide-based PIN structural near infrared photodiode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2135510B (en) | 1987-09-23 |
| JPH065765B2 (en) | 1994-01-19 |
| JPS59115575A (en) | 1984-07-04 |
| GB8334251D0 (en) | 1984-02-01 |
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Legal Events
| Date | Code | Title | Description |
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| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19961222 |