GB2130192B - Silicon carbide-based molded member for use in semiconductor manufacture - Google Patents

Silicon carbide-based molded member for use in semiconductor manufacture

Info

Publication number
GB2130192B
GB2130192B GB08328426A GB8328426A GB2130192B GB 2130192 B GB2130192 B GB 2130192B GB 08328426 A GB08328426 A GB 08328426A GB 8328426 A GB8328426 A GB 8328426A GB 2130192 B GB2130192 B GB 2130192B
Authority
GB
United Kingdom
Prior art keywords
silicon carbide
molded member
semiconductor manufacture
based molded
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08328426A
Other languages
English (en)
Other versions
GB8328426D0 (en
GB2130192A (en
Inventor
Isao Sakashita
Takashi Tanaka
Masayoshi Yamaguchi
Toshiaka Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18980082A external-priority patent/JPS5978529A/ja
Priority claimed from JP58090483A external-priority patent/JPS59217613A/ja
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of GB8328426D0 publication Critical patent/GB8328426D0/en
Publication of GB2130192A publication Critical patent/GB2130192A/en
Application granted granted Critical
Publication of GB2130192B publication Critical patent/GB2130192B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Products (AREA)
GB08328426A 1982-10-28 1983-10-25 Silicon carbide-based molded member for use in semiconductor manufacture Expired GB2130192B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18980082A JPS5978529A (ja) 1982-10-28 1982-10-28 半導体製造用炭化珪素質材料
JP58090483A JPS59217613A (ja) 1983-05-23 1983-05-23 半導体製造用炭化珪素質材料

Publications (3)

Publication Number Publication Date
GB8328426D0 GB8328426D0 (en) 1983-11-23
GB2130192A GB2130192A (en) 1984-05-31
GB2130192B true GB2130192B (en) 1987-01-07

Family

ID=26431963

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08328426A Expired GB2130192B (en) 1982-10-28 1983-10-25 Silicon carbide-based molded member for use in semiconductor manufacture

Country Status (5)

Country Link
DE (1) DE3338755A1 (fr)
FR (1) FR2535312B1 (fr)
GB (1) GB2130192B (fr)
IT (1) IT1169895B (fr)
NL (1) NL8303684A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138913A (ja) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd 半導体拡散炉管の製造方法
JPS6169116A (ja) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター
JPS6212666A (ja) * 1985-07-09 1987-01-21 東芝セラミツクス株式会社 半導体用炉芯管の製造方法
JPH0521297Y2 (fr) * 1986-07-31 1993-06-01
US4999228A (en) * 1988-05-06 1991-03-12 Shin-Etsu Chemical Co., Ltd. Silicon carbide diffusion tube for semi-conductor
US5332702A (en) * 1993-04-16 1994-07-26 Corning Incorporated Low sodium zircon refractory and fused silica process
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer
US6572700B2 (en) 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
JP4135239B2 (ja) * 1997-12-26 2008-08-20 住友電気工業株式会社 半導体結晶およびその製造方法ならびに製造装置
US6296716B1 (en) 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
AU2001277074A1 (en) * 2000-07-24 2002-02-05 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
US7501370B2 (en) 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
CN101884099B (zh) 2007-12-20 2012-07-25 圣戈本陶瓷及塑料股份有限公司 用于处理半导体加工部件的方法以及由此形成的部件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1219625A (fr) * 1958-04-03 1960-05-18 Wacker Chemie Gmbh Procédé de fabrication d'objets de forme déterminée en carbure de silicium trèspur
JPS5722914B2 (fr) * 1974-08-27 1982-05-15
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPS5222477A (en) * 1975-08-13 1977-02-19 Toshiba Ceramics Co Ltd Sic-si type equalizing tube for manufacturing gas impermeable semi conductors
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
JPS5848487B2 (ja) * 1976-03-31 1983-10-28 東芝セラミツクス株式会社 高純度炭化珪素粉末の製造方法
US4123286A (en) * 1976-12-27 1978-10-31 The Carborundum Company Silicon carbide powder compositions
JPS55158622A (en) * 1979-05-30 1980-12-10 Toshiba Ceramics Co Ltd Manufacture of silicon carbide material for semiconductor

Also Published As

Publication number Publication date
IT1169895B (it) 1987-06-03
GB8328426D0 (en) 1983-11-23
IT8323430A0 (it) 1983-10-25
NL8303684A (nl) 1984-05-16
FR2535312B1 (fr) 1986-11-14
FR2535312A1 (fr) 1984-05-04
GB2130192A (en) 1984-05-31
DE3338755A1 (de) 1984-05-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20001025