GB2061651B - Method of programming an electrically alterable read only memory - Google Patents

Method of programming an electrically alterable read only memory

Info

Publication number
GB2061651B
GB2061651B GB8025617A GB8025617A GB2061651B GB 2061651 B GB2061651 B GB 2061651B GB 8025617 A GB8025617 A GB 8025617A GB 8025617 A GB8025617 A GB 8025617A GB 2061651 B GB2061651 B GB 2061651B
Authority
GB
United Kingdom
Prior art keywords
programming
memory
electrically alterable
alterable read
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8025617A
Other languages
English (en)
Other versions
GB2061651A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB2061651A publication Critical patent/GB2061651A/en
Application granted granted Critical
Publication of GB2061651B publication Critical patent/GB2061651B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
GB8025617A 1979-10-08 1980-08-06 Method of programming an electrically alterable read only memory Expired GB2061651B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT7926306A IT1209430B (it) 1979-10-08 1979-10-08 Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile del tipo cancellabile per gruppi di celle.

Publications (2)

Publication Number Publication Date
GB2061651A GB2061651A (en) 1981-05-13
GB2061651B true GB2061651B (en) 1984-02-08

Family

ID=11219192

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8025617A Expired GB2061651B (en) 1979-10-08 1980-08-06 Method of programming an electrically alterable read only memory

Country Status (4)

Country Link
DE (1) DE3037895A1 (https=)
FR (1) FR2467463A1 (https=)
GB (1) GB2061651B (https=)
IT (1) IT1209430B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108681A3 (en) * 1982-11-04 1986-10-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Bit erasable electrically erasable programmable read only memory
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824564A (en) * 1973-07-19 1974-07-16 Sperry Rand Corp Integrated threshold mnos memory with decoder and operating sequence

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
US7283397B2 (en) 1989-04-13 2007-10-16 Sandisk Corporation Flash EEprom system capable of selective erasing and parallel programming/verifying memory cell blocks
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system

Also Published As

Publication number Publication date
GB2061651A (en) 1981-05-13
DE3037895A1 (de) 1981-04-16
IT1209430B (it) 1989-07-16
IT7926306A0 (it) 1979-10-08
FR2467463A1 (fr) 1981-04-17
FR2467463B1 (https=) 1984-12-21

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000805