GB2057758B - N+contact for high purity semi-conductor detector - Google Patents

N+contact for high purity semi-conductor detector

Info

Publication number
GB2057758B
GB2057758B GB8018484A GB8018484A GB2057758B GB 2057758 B GB2057758 B GB 2057758B GB 8018484 A GB8018484 A GB 8018484A GB 8018484 A GB8018484 A GB 8018484A GB 2057758 B GB2057758 B GB 2057758B
Authority
GB
United Kingdom
Prior art keywords
contact
high purity
purity semi
conductor detector
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8018484A
Other languages
English (en)
Other versions
GB2057758A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungsanlage Juelich GmbH filed Critical Kernforschungsanlage Juelich GmbH
Publication of GB2057758A publication Critical patent/GB2057758A/en
Application granted granted Critical
Publication of GB2057758B publication Critical patent/GB2057758B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
GB8018484A 1979-06-19 1980-06-05 N+contact for high purity semi-conductor detector Expired GB2057758B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2924569A DE2924569C2 (de) 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium

Publications (2)

Publication Number Publication Date
GB2057758A GB2057758A (en) 1981-04-01
GB2057758B true GB2057758B (en) 1983-12-14

Family

ID=6073511

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8018484A Expired GB2057758B (en) 1979-06-19 1980-06-05 N+contact for high purity semi-conductor detector

Country Status (7)

Country Link
US (1) US4415916A (enExample)
JP (1) JPS568886A (enExample)
CA (1) CA1144663A (enExample)
DE (1) DE2924569C2 (enExample)
FR (1) FR2459554A1 (enExample)
GB (1) GB2057758B (enExample)
IL (1) IL60322A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US7238597B2 (en) * 2002-09-27 2007-07-03 Brontek Delta Corporation Boron ion delivery system
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2155773A1 (en) * 1971-10-04 1973-05-25 Radiotechnique Compelec Semiconductor radioactivity detector - with medical application as intravenous probe

Also Published As

Publication number Publication date
DE2924569C2 (de) 1983-12-08
IL60322A0 (en) 1980-09-16
FR2459554B1 (enExample) 1984-10-26
IL60322A (en) 1983-06-15
CA1144663A (en) 1983-04-12
US4415916A (en) 1983-11-15
FR2459554A1 (fr) 1981-01-09
GB2057758A (en) 1981-04-01
JPS568886A (en) 1981-01-29
DE2924569A1 (de) 1981-01-08

Similar Documents

Publication Publication Date Title
DE3279795D1 (en) High electron mobility semiconductor device
NZ192707A (en) Wafers manufacture
JPS55133562A (en) Semiconductor device
JPS5637680A (en) Semiconductor device
JPS55117267A (en) Electron semiconductor element
EP0023782A3 (en) Semiconductor device
DE3065706D1 (en) Semiconductor annealing
JPS567466A (en) Selffalignment semiconductor device
IE801825L (en) Semiconductor manufacture
GB2133160B (en) Temperature detector
JPS567450A (en) Semiconductor device
GB2060432B (en) Solid impurity detector
JPS567465A (en) Semiconductor device
DE3067917D1 (en) Constructional arrangement for semiconductor devices
IE801479L (en) Semiconductors
JPS5687395A (en) Semiconductor device
DE3071242D1 (en) Semiconductor device
JPS55162248A (en) Semiconductor device
GB2007495B (en) Carrier for semiconductor wafers
JPS5676581A (en) Semiconductor device
JPS5650542A (en) Semiconductor package
GB2057758B (en) N+contact for high purity semi-conductor detector
GB2060998B (en) Semiconductor annealing
JPS55113354A (en) Semiconductor device
JPS5681930A (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee