JPS568886A - Geesemiconductor detector having n****contact implanted with phosphorus - Google Patents

Geesemiconductor detector having n****contact implanted with phosphorus

Info

Publication number
JPS568886A
JPS568886A JP8154380A JP8154380A JPS568886A JP S568886 A JPS568886 A JP S568886A JP 8154380 A JP8154380 A JP 8154380A JP 8154380 A JP8154380 A JP 8154380A JP S568886 A JPS568886 A JP S568886A
Authority
JP
Japan
Prior art keywords
geesemiconductor
phosphorus
detector
contact implanted
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8154380A
Other languages
English (en)
Japanese (ja)
Inventor
Puroteiku Dafuooru
Riipe Georuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungsanlage Juelich GmbH filed Critical Kernforschungsanlage Juelich GmbH
Publication of JPS568886A publication Critical patent/JPS568886A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP8154380A 1979-06-19 1980-06-18 Geesemiconductor detector having n****contact implanted with phosphorus Pending JPS568886A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2924569A DE2924569C2 (de) 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium

Publications (1)

Publication Number Publication Date
JPS568886A true JPS568886A (en) 1981-01-29

Family

ID=6073511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8154380A Pending JPS568886A (en) 1979-06-19 1980-06-18 Geesemiconductor detector having n****contact implanted with phosphorus

Country Status (7)

Country Link
US (1) US4415916A (enExample)
JP (1) JPS568886A (enExample)
CA (1) CA1144663A (enExample)
DE (1) DE2924569C2 (enExample)
FR (1) FR2459554A1 (enExample)
GB (1) GB2057758B (enExample)
IL (1) IL60322A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US7238597B2 (en) * 2002-09-27 2007-07-03 Brontek Delta Corporation Boron ion delivery system
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2155773A1 (en) * 1971-10-04 1973-05-25 Radiotechnique Compelec Semiconductor radioactivity detector - with medical application as intravenous probe

Also Published As

Publication number Publication date
DE2924569C2 (de) 1983-12-08
IL60322A0 (en) 1980-09-16
FR2459554B1 (enExample) 1984-10-26
IL60322A (en) 1983-06-15
CA1144663A (en) 1983-04-12
GB2057758B (en) 1983-12-14
US4415916A (en) 1983-11-15
FR2459554A1 (fr) 1981-01-09
GB2057758A (en) 1981-04-01
DE2924569A1 (de) 1981-01-08

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