FR2459554A1 - Detecteurs a semi-conducteurs au ge comportant un contact de type n+ realise par implantation de phosphore - Google Patents

Detecteurs a semi-conducteurs au ge comportant un contact de type n+ realise par implantation de phosphore Download PDF

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Publication number
FR2459554A1
FR2459554A1 FR8013520A FR8013520A FR2459554A1 FR 2459554 A1 FR2459554 A1 FR 2459554A1 FR 8013520 A FR8013520 A FR 8013520A FR 8013520 A FR8013520 A FR 8013520A FR 2459554 A1 FR2459554 A1 FR 2459554A1
Authority
FR
France
Prior art keywords
implantation
phosphorus
type contact
detectors
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8013520A
Other languages
English (en)
French (fr)
Other versions
FR2459554B1 (enExample
Inventor
Davor Protic
Georg Riepe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungsanlage Juelich GmbH filed Critical Kernforschungsanlage Juelich GmbH
Publication of FR2459554A1 publication Critical patent/FR2459554A1/fr
Application granted granted Critical
Publication of FR2459554B1 publication Critical patent/FR2459554B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
FR8013520A 1979-06-19 1980-06-18 Detecteurs a semi-conducteurs au ge comportant un contact de type n+ realise par implantation de phosphore Granted FR2459554A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2924569A DE2924569C2 (de) 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium

Publications (2)

Publication Number Publication Date
FR2459554A1 true FR2459554A1 (fr) 1981-01-09
FR2459554B1 FR2459554B1 (enExample) 1984-10-26

Family

ID=6073511

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8013520A Granted FR2459554A1 (fr) 1979-06-19 1980-06-18 Detecteurs a semi-conducteurs au ge comportant un contact de type n+ realise par implantation de phosphore

Country Status (7)

Country Link
US (1) US4415916A (enExample)
JP (1) JPS568886A (enExample)
CA (1) CA1144663A (enExample)
DE (1) DE2924569C2 (enExample)
FR (1) FR2459554A1 (enExample)
GB (1) GB2057758B (enExample)
IL (1) IL60322A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US7238597B2 (en) * 2002-09-27 2007-07-03 Brontek Delta Corporation Boron ion delivery system
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2155773A1 (en) * 1971-10-04 1973-05-25 Radiotechnique Compelec Semiconductor radioactivity detector - with medical application as intravenous probe

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2155773A1 (en) * 1971-10-04 1973-05-25 Radiotechnique Compelec Semiconductor radioactivity detector - with medical application as intravenous probe

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. NS-24, no. 1, février 1977, pages 161-164, New York, US *
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. NS-24, no. 1, février 1977, pages 64-67, New York, US *
NUCLEAR INSTRUMENTS AND METHODS, vol. 101, 1972, pages 31-37, North-Holland Publ. Co., Amsterdam, NL *

Also Published As

Publication number Publication date
DE2924569C2 (de) 1983-12-08
IL60322A0 (en) 1980-09-16
FR2459554B1 (enExample) 1984-10-26
IL60322A (en) 1983-06-15
CA1144663A (en) 1983-04-12
GB2057758B (en) 1983-12-14
US4415916A (en) 1983-11-15
GB2057758A (en) 1981-04-01
JPS568886A (en) 1981-01-29
DE2924569A1 (de) 1981-01-08

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