GB2050064A - Electro-static chuck - Google Patents
Electro-static chuck Download PDFInfo
- Publication number
- GB2050064A GB2050064A GB8013726A GB8013726A GB2050064A GB 2050064 A GB2050064 A GB 2050064A GB 8013726 A GB8013726 A GB 8013726A GB 8013726 A GB8013726 A GB 8013726A GB 2050064 A GB2050064 A GB 2050064A
- Authority
- GB
- United Kingdom
- Prior art keywords
- dielectric layer
- electro
- electrode
- chuck
- static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
Abstract
An electrostatic chuck comprises a base formed of an oxidisable metal constituting an electrode, with the surface oxidised to form a dielectric layer. This provides a smooth hard wearing and readily reproducible surface and enables thin wafer workpieces e.g. silicon semiconductor discs, to be firmly held on the chuck. The electrode may be of Al, Ta, Ti or Si.
Description
SPECIFICATION
Electro-static chuck
The invention relates to an electro-static chuck device for mounting thin electrically conductive or semiconductive materials in the process of working and/or checking such materials. The chuck comprises a base comprising a dielectric layer and an electrode.
According to the invention the dielectric layer is formed of the oxide of the electrode material which may be selected from nonferrous metals such as aluminium, tantanium and titanium, or from semiconductor crystals such as silicon.
The solution of the invention eliminates particular safety provision, any back effects upon an electron-beam, in the event that the material is used in electron-beam working devices, and provides a considerably wearresistant and reproducible dielectric layer.
In the course of processing micro-electronic elements it is necessary to secure semiconductor discs (so-called wafers) to a base and to arrange them in a plane so that they can be structured in order to produce varnish holding masks. The holding means can be mechanical or electro-static ones or a vacuum. The field of electron beam lithography preferably uses the electro-static holding means.
Applications are also known for electrostatic holding in the field of photolighography and in ion-implantation.
Furthermore, it is feasible to mount metallic workpieces in such mounts for lapping and/or polishing.
An electro-static chuck is based upon the attraction of two oppositely loaded capacitor plates, where the dielectric layer and the electrode are the chuck base.
In an electro-static chuck the dielectric layer between electrode and workpiece plays a decisive role. The thickness of the dielectric layer affects the necessary voltage and also has a considerable influence on the smoothness of the work-piece base.
Furthermore wear-resistant or easily reproducible dielectric layers ensure a long life in operation. Previous publications such as the
US Patent Specification No. 3983401, British Patent No. 1443215 and the Review of
Scientific Instruments, Vol. 44 No. 10, page 1506, Wardly "Electro-static wafer chuck" refer to dielectric layers made of mica, polyester or barium titanate. These materials are disadvantageous since adhesives have to be used to stick such layers to a base, the smoothness of the latter is decisively impaired by said adhesives.
Furthermore, such adhesives do not ensure a considerably long lasting adhesive force.
Thus the entire electrode cannot be reused but has to be re-worked beginning with the smoothing thereof.
The same disadvantage occurs when the dielectric layer has worn off.
As concerns small layer thickness these are also limited by technological reasons. Dielectric layers of a thickness 210 jum require voltage of from 300 volt to 3 kilovolt, which necessitates additional safety provisions for the device.
Furthermore, when the known electro-static chucks are employed in electron-beam devices severe back-effects upon the electron beam due to the electric fields of considerable orders results which requires additional measures to reduce the ensuing deflections.
It is an object of the present invention to obviate the above disadvantages.
It is a further object of the invention to provide an electro-static chuck to hold a workpiece for smoothing, particularly semiconductor discs, such as to have negligible effects upon an electron beam, to be more suitable to safety requirements, and to have a dielectric layer which is highly resistant to wear and easily reproducible.
The invention provides an electro-static chuck comprising a base constituted of an electrode covered by an insulating dielectric layer, wherein the dielectric layer material consists of an oxide of the electrode material.
The solution of the invention has the advantage that the dielectric layer and the electrode are structurally connected with each other.
Advantageously, nonferrous metals such as aluminium, tantalium, titanium, and semiconductor crystals such as silicon are employed as electrode materials which permit very precise smoothing to a smoothness of #1 iim.
The oxides of the nonferrous metals are obtained from an oxidation of the anode, where the dielectric layers of a thickness of 2500 A are of a considerable electrical intensity.
The oxides of the abovenamed materials posses a high mechanical strength.
Furthermore, the dielectric layers of one and the same electrode are easily reproducible due to the direct proportion of layer thickness and voltage applied in producing such layers. The use of such thin dielectric layers permits the chucking and smoothing of wafer shaped workpieces of low thickness, for example, of silicon discs under an applied voltage < 1 0 volt, thus eliminating particular safety provisions and, in the event of electron beam working, ensures a minimum effect upon the electron beam.
Dielectric layers of identical properties can also be produced from silicon electrodes through thermal oxidation or pyrolysis.
Claims (5)
1. An electro-static chuck comprising a base constituted of an electrode covered by an insulating dielectric layer, wherein the dielectric layer material consists of an oxide of the electrode material.
2. A chuck according to claim 1, wherein the dielectric layer consists of an anodal oxide of a nonferrous metal.
3. A chuck according to claim 2, wherein the nonferrous metal is titanium, aluminium or tantalium.
4. A chuck according to claim 1, wherein the dielectric layer consists of thermic or pyrolytic oxidized semiconductor material, such as silicon.
5. An electro-static chuck according to claim 1, substantially as hereinbefore particularly described and exemplified.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD21251179A DD143131A1 (en) | 1979-04-26 | 1979-04-26 | DEVICE FOR ELECTROSTATIC HOLDING OF WORKPIECES, PARTICULARLY SEMICONDUCTED DISCS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2050064A true GB2050064A (en) | 1980-12-31 |
Family
ID=5517859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8013726A Withdrawn GB2050064A (en) | 1979-04-26 | 1980-04-25 | Electro-static chuck |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS55145351A (en) |
| DD (1) | DD143131A1 (en) |
| DE (1) | DE3013352A1 (en) |
| FR (1) | FR2455360A1 (en) |
| GB (1) | GB2050064A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0138254A1 (en) * | 1983-09-30 | 1985-04-24 | Philips Electronics Uk Limited | Electrostatic chuck and loading method |
| GB2147459A (en) * | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| GB2171556A (en) * | 1985-01-10 | 1986-08-28 | Sumitomo Electric Industries | Method and apparatus for the production of a semiconductor |
| US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
| US5522131A (en) * | 1993-07-20 | 1996-06-04 | Applied Materials, Inc. | Electrostatic chuck having a grooved surface |
| US5600530A (en) | 1992-08-04 | 1997-02-04 | The Morgan Crucible Company Plc | Electrostatic chuck |
| US5656093A (en) * | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
| US5745332A (en) * | 1996-05-08 | 1998-04-28 | Applied Materials, Inc. | Monopolar electrostatic chuck having an electrode in contact with a workpiece |
| DE4216218B4 (en) * | 1991-05-17 | 2009-04-02 | Christopher Max Horwitz | Method and device for electrostatically holding a body by means of an electrostatic holding device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2106325A (en) * | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
| JPS6059104B2 (en) * | 1982-02-03 | 1985-12-23 | 株式会社東芝 | electrostatic chuck board |
| JPS5928354A (en) * | 1982-08-10 | 1984-02-15 | Toshiba Corp | Thin film for electrostatic chuck |
| US4551192A (en) * | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
| JPS6099538A (en) * | 1983-11-01 | 1985-06-03 | 横河・ヒュ−レット・パッカ−ド株式会社 | Pin chuck |
| AT383439B (en) * | 1985-11-04 | 1987-07-10 | Akad Wissenschaften Ddr | Apparatus for loading devices of dry etching installations |
| US5535507A (en) * | 1993-12-20 | 1996-07-16 | International Business Machines Corporation | Method of making electrostatic chuck with oxide insulator |
| JP3425249B2 (en) * | 1995-01-23 | 2003-07-14 | 東芝機械株式会社 | Sample holder fixing device |
-
1979
- 1979-04-26 DD DD21251179A patent/DD143131A1/en not_active IP Right Cessation
-
1980
- 1980-04-05 DE DE19803013352 patent/DE3013352A1/en not_active Withdrawn
- 1980-04-22 FR FR8008978A patent/FR2455360A1/en active Pending
- 1980-04-25 JP JP5438780A patent/JPS55145351A/en active Pending
- 1980-04-25 GB GB8013726A patent/GB2050064A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0138254A1 (en) * | 1983-09-30 | 1985-04-24 | Philips Electronics Uk Limited | Electrostatic chuck and loading method |
| GB2147459A (en) * | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| GB2171556A (en) * | 1985-01-10 | 1986-08-28 | Sumitomo Electric Industries | Method and apparatus for the production of a semiconductor |
| DE4216218B4 (en) * | 1991-05-17 | 2009-04-02 | Christopher Max Horwitz | Method and device for electrostatically holding a body by means of an electrostatic holding device |
| US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
| US5600530A (en) | 1992-08-04 | 1997-02-04 | The Morgan Crucible Company Plc | Electrostatic chuck |
| US5522131A (en) * | 1993-07-20 | 1996-06-04 | Applied Materials, Inc. | Electrostatic chuck having a grooved surface |
| US5656093A (en) * | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
| US5745332A (en) * | 1996-05-08 | 1998-04-28 | Applied Materials, Inc. | Monopolar electrostatic chuck having an electrode in contact with a workpiece |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2455360A1 (en) | 1980-11-21 |
| JPS55145351A (en) | 1980-11-12 |
| DD143131A1 (en) | 1980-07-30 |
| DE3013352A1 (en) | 1980-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2050064A (en) | Electro-static chuck | |
| EP0049588B1 (en) | Method and apparatus for dry etching and electrostatic chucking device used therein | |
| US5055964A (en) | Electrostatic chuck having tapered electrodes | |
| US4645218A (en) | Electrostatic chuck | |
| US6522519B1 (en) | Electrostatic chucking device and methods for holding microlithographic sample | |
| CN101405857B (en) | Apparatus and method for carrying substrates | |
| EP0439000A1 (en) | Electrostatic clamp and method | |
| US20100096262A1 (en) | Electrostatic chuck | |
| US20100002354A1 (en) | Electrostatic chuck device | |
| JPH0119253B2 (en) | ||
| US6122159A (en) | Electrostatic holding apparatus | |
| US3479269A (en) | Method for sputter etching using a high frequency negative pulse train | |
| WO2012090430A1 (en) | Electrostatic adsorption apparatus | |
| CN113555308A (en) | Ceramic substrate and manufacturing method thereof, electrostatic chuck, substrate fixing device and semiconductor device package | |
| US20230150882A1 (en) | Dielectric for electrostatic chuck | |
| JPS62141578A (en) | Electrostatic discharging and charging method | |
| US4596719A (en) | Multilayer coating method and apparatus | |
| JPS62287950A (en) | Electrostatic attracting device | |
| JPH0216749A (en) | Wafer holder for electron beam exposure device | |
| JPS63299137A (en) | Sample holding device | |
| JP2613646B2 (en) | Method of forming low stress metal thin film | |
| JPH03183151A (en) | Electrostatic chuck plate | |
| CN116805621A (en) | Ceramic substrate, method of manufacturing the same, electrostatic chuck, substrate fixing device, and package for semiconductor device | |
| JPH06504877A (en) | Electric field-assisted adhesion | |
| JPH08108318A (en) | Electric discharge machining method for electrically insulating ceramics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |