Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
  • H01L21/743—Making of internal connections, substrate contacts
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
  • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
  • H01L29/7391—Gated diode structures
  • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Thyristors (AREA)
• Junction Field-Effect Transistors (AREA)
• Electronic Switches (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Thin Film Transistor (AREA)

Applications Claiming Priority (3)

Publications (2)

Family

ID=27420763

Family Applications (1)

Country Status (18)

Families Citing this family (4)

Family Cites Families (9)

• 1979
  • 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
  • 1979-12-06 NL NL7920184A patent/NL7920184A/nl unknown
  • 1979-12-06 CH CH6266/80A patent/CH659151A5/de not_active IP Right Cessation
  • 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
  • 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
  • 1979-12-10 HU HU79WE614A patent/HU181030B/hu unknown
  • 1979-12-14 DD DD79217696A patent/DD147897A5/de unknown
  • 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
  • 1979-12-17 IL IL58970A patent/IL58970A/xx unknown
  • 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
  • 1979-12-18 FR FR7930946A patent/FR2445026A1/fr active Granted
  • 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
  • 1979-12-19 ES ES487066A patent/ES487066A1/es not_active Expired
  • 1979-12-19 IT IT28206/79A patent/IT1126603B/it active
  • 1979-12-20 KR KR1019790004540A patent/KR830002293B1/ko active
• 1980
  • 1980-08-13 SE SE8005703A patent/SE446139B/sv not_active IP Right Cessation
  • 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
• 1984
  • 1984-04-25 SG SG328/84A patent/SG32884G/en unknown

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