GB202400533D0 - Memory device - Google Patents

Memory device

Info

Publication number
GB202400533D0
GB202400533D0 GBGB2400533.2A GB202400533A GB202400533D0 GB 202400533 D0 GB202400533 D0 GB 202400533D0 GB 202400533 A GB202400533 A GB 202400533A GB 202400533 D0 GB202400533 D0 GB 202400533D0
Authority
GB
United Kingdom
Prior art keywords
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GBGB2400533.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Edinburgh
Original Assignee
University of Edinburgh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Edinburgh filed Critical University of Edinburgh
Publication of GB202400533D0 publication Critical patent/GB202400533D0/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/003Cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1659Cell access
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/72Array wherein the access device being a diode
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/74Array wherein each memory cell has more than one access device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/79Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
GBGB2400533.2A 2023-12-11 2024-01-15 Memory device Pending GB202400533D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20230101019 2023-12-11

Publications (1)

Publication Number Publication Date
GB202400533D0 true GB202400533D0 (en) 2024-02-28

Family

ID=89984056

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB2400533.2A Pending GB202400533D0 (en) 2023-12-11 2024-01-15 Memory device

Country Status (1)

Country Link
GB (1) GB202400533D0 (en)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Design flow for hybrid cmoslmemristor systems-part i: Modeling and verification steps", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS, vol. 68, no. 12, 2021, pages 4862 - 4875
I. MESSARIS: "A Data-Driven Verilog-A ReRAM Model", IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, vol. 37, no. 12, December 2018 (2018-12-01), pages 3151 - 3162, XP011697645, DOI: 10.1109/TCAD.2018.2791468

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