GB202400533D0 - Memory device - Google Patents
Memory deviceInfo
- Publication number
- GB202400533D0 GB202400533D0 GBGB2400533.2A GB202400533A GB202400533D0 GB 202400533 D0 GB202400533 D0 GB 202400533D0 GB 202400533 A GB202400533 A GB 202400533A GB 202400533 D0 GB202400533 D0 GB 202400533D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- memory device
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/74—Array wherein each memory cell has more than one access device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GR20230101019 | 2023-12-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB202400533D0 true GB202400533D0 (en) | 2024-02-28 |
Family
ID=89984056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB2400533.2A Pending GB202400533D0 (en) | 2023-12-11 | 2024-01-15 | Memory device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB202400533D0 (en) |
-
2024
- 2024-01-15 GB GBGB2400533.2A patent/GB202400533D0/en active Pending
Non-Patent Citations (2)
Title |
---|
"Design flow for hybrid cmoslmemristor systems-part i: Modeling and verification steps", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS, vol. 68, no. 12, 2021, pages 4862 - 4875 |
I. MESSARIS: "A Data-Driven Verilog-A ReRAM Model", IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, vol. 37, no. 12, December 2018 (2018-12-01), pages 3151 - 3162, XP011697645, DOI: 10.1109/TCAD.2018.2791468 |
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