GB1588695A - Analogue switching circuits - Google Patents

Analogue switching circuits Download PDF

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Publication number
GB1588695A
GB1588695A GB11478/78A GB1147878A GB1588695A GB 1588695 A GB1588695 A GB 1588695A GB 11478/78 A GB11478/78 A GB 11478/78A GB 1147878 A GB1147878 A GB 1147878A GB 1588695 A GB1588695 A GB 1588695A
Authority
GB
United Kingdom
Prior art keywords
transistor
region
regions
semiconductor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11478/78A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1588695A publication Critical patent/GB1588695A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/668—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB11478/78A 1977-03-28 1978-03-22 Analogue switching circuits Expired GB1588695A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/781,790 US4125855A (en) 1977-03-28 1977-03-28 Integrated semiconductor crosspoint arrangement

Publications (1)

Publication Number Publication Date
GB1588695A true GB1588695A (en) 1981-04-29

Family

ID=25123949

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11478/78A Expired GB1588695A (en) 1977-03-28 1978-03-22 Analogue switching circuits

Country Status (12)

Country Link
US (1) US4125855A (https=)
JP (1) JPS53120390A (https=)
BE (1) BE865243A (https=)
CA (1) CA1095182A (https=)
CH (1) CH626488A5 (https=)
DE (1) DE2812784A1 (https=)
ES (1) ES468296A1 (https=)
FR (1) FR2386224A1 (https=)
GB (1) GB1588695A (https=)
IT (1) IT1093920B (https=)
NL (1) NL7803206A (https=)
SE (1) SE439409B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2932587C2 (de) * 1979-08-10 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Breitbandkoppelanordnung mit einer Matrix von Koppelpunktschaltkreisen in ECL-Technik
JPS56148179A (en) * 1980-04-21 1981-11-17 Fujitsu Ltd Converting method of ac-dc
US4402008A (en) * 1981-08-27 1983-08-30 Bell Telephone Laboratories, Incorporated Wideband switching architecture
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
DE3435571A1 (de) * 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte bipolare darlington-schaltung
JP7042719B2 (ja) * 2018-06-21 2022-03-28 日揮グローバル株式会社 硫酸ニッケル化合物の製造方法
CN109450434A (zh) * 2018-12-14 2019-03-08 东莞博力威电池有限公司 一种双通道模拟选择电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US3024448A (en) * 1956-09-20 1962-03-06 Int Standard Electric Corp Static electric switches
US3564443A (en) * 1966-06-29 1971-02-16 Hitachi Ltd Semiconductor integrated circuit device containing lateral and planar transistor in a semiconductor layer
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
BE758719A (fr) * 1969-11-11 1971-05-10 Philips Nv Dispositif semiconducteur
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
DE2123395C3 (de) * 1971-05-12 1983-03-10 TE KA DE Felten & Guilleaume Fernmeldeanlagen GmbH, 8500 Nürnberg Koppelpunkt einer elektronischen Koppelfeldeinrichtung mit Feldeffekttransistoren
FR2144595B1 (https=) * 1971-07-07 1974-09-06 Radiotechnique Compelec
JPS4871892A (https=) * 1971-12-27 1973-09-28
US3786425A (en) * 1972-12-18 1974-01-15 Bell Telephone Labor Inc Integrated circuit switching network providing crosspoint gain
US3913125A (en) * 1973-06-11 1975-10-14 Gte Laboratories Inc Negative impedance converter
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors

Also Published As

Publication number Publication date
JPS6337507B2 (https=) 1988-07-26
BE865243A (fr) 1978-07-17
FR2386224A1 (fr) 1978-10-27
DE2812784C2 (https=) 1987-08-06
CH626488A5 (https=) 1981-11-13
NL7803206A (nl) 1978-10-02
SE7803064L (sv) 1978-09-29
SE439409B (sv) 1985-06-10
US4125855A (en) 1978-11-14
IT1093920B (it) 1985-07-26
IT7821620A0 (it) 1978-03-24
DE2812784A1 (de) 1978-10-05
JPS53120390A (en) 1978-10-20
ES468296A1 (es) 1978-11-16
FR2386224B1 (https=) 1981-12-11
CA1095182A (en) 1981-02-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19980321