GB1574461A - Monolithically integrated l structure including a planar transistor - Google Patents
Monolithically integrated l structure including a planar transistor Download PDFInfo
- Publication number
- GB1574461A GB1574461A GB189577A GB189577A GB1574461A GB 1574461 A GB1574461 A GB 1574461A GB 189577 A GB189577 A GB 189577A GB 189577 A GB189577 A GB 189577A GB 1574461 A GB1574461 A GB 1574461A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- emitter
- conductivity type
- zones
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762602395 DE2602395C3 (de) | 1976-01-23 | 1976-01-23 | Monolithisch integrierter I2 L-Planartransistor und Verfahren zu seiner Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1574461A true GB1574461A (en) | 1980-09-10 |
Family
ID=5968045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB189577A Expired GB1574461A (en) | 1976-01-23 | 1977-01-18 | Monolithically integrated l structure including a planar transistor |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2602395C3 (de) |
FR (1) | FR2339254A1 (de) |
GB (1) | GB1574461A (de) |
IT (1) | IT1077580B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2855768C3 (de) * | 1978-12-22 | 1981-10-15 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schaltung |
FR2457564A1 (fr) * | 1979-05-23 | 1980-12-19 | Thomson Csf | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |
-
1976
- 1976-01-23 DE DE19762602395 patent/DE2602395C3/de not_active Expired
-
1977
- 1977-01-13 IT IT1923877A patent/IT1077580B/it active
- 1977-01-18 GB GB189577A patent/GB1574461A/en not_active Expired
- 1977-01-20 FR FR7701556A patent/FR2339254A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
IT1077580B (it) | 1985-05-04 |
DE2602395A1 (de) | 1977-07-28 |
FR2339254A1 (fr) | 1977-08-19 |
DE2602395C3 (de) | 1978-10-12 |
DE2602395B2 (de) | 1978-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |