FR2339254A1 - Transistor planaire de circuit de logique a injection integree (i2l) - Google Patents
Transistor planaire de circuit de logique a injection integree (i2l)Info
- Publication number
- FR2339254A1 FR2339254A1 FR7701556A FR7701556A FR2339254A1 FR 2339254 A1 FR2339254 A1 FR 2339254A1 FR 7701556 A FR7701556 A FR 7701556A FR 7701556 A FR7701556 A FR 7701556A FR 2339254 A1 FR2339254 A1 FR 2339254A1
- Authority
- FR
- France
- Prior art keywords
- logic circuit
- integrated injection
- planar transistor
- injection logic
- planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762602395 DE2602395C3 (de) | 1976-01-23 | 1976-01-23 | Monolithisch integrierter I2 L-Planartransistor und Verfahren zu seiner Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2339254A1 true FR2339254A1 (fr) | 1977-08-19 |
Family
ID=5968045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7701556A Withdrawn FR2339254A1 (fr) | 1976-01-23 | 1977-01-20 | Transistor planaire de circuit de logique a injection integree (i2l) |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2602395C3 (de) |
FR (1) | FR2339254A1 (de) |
GB (1) | GB1574461A (de) |
IT (1) | IT1077580B (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016860A1 (de) * | 1978-12-22 | 1980-10-15 | Deutsche ITT Industries GmbH | Monolithisch integrierte Schaltung mit einem I2L-Schaltungsteil und einem Analog-Schaltungsteil |
FR2457564A1 (fr) * | 1979-05-23 | 1980-12-19 | Thomson Csf | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |
-
1976
- 1976-01-23 DE DE19762602395 patent/DE2602395C3/de not_active Expired
-
1977
- 1977-01-13 IT IT1923877A patent/IT1077580B/it active
- 1977-01-18 GB GB189577A patent/GB1574461A/en not_active Expired
- 1977-01-20 FR FR7701556A patent/FR2339254A1/fr not_active Withdrawn
Non-Patent Citations (3)
Title |
---|
EXBK/70 * |
EXBK/71 * |
EXBK/75 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016860A1 (de) * | 1978-12-22 | 1980-10-15 | Deutsche ITT Industries GmbH | Monolithisch integrierte Schaltung mit einem I2L-Schaltungsteil und einem Analog-Schaltungsteil |
FR2457564A1 (fr) * | 1979-05-23 | 1980-12-19 | Thomson Csf | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
IT1077580B (it) | 1985-05-04 |
DE2602395A1 (de) | 1977-07-28 |
DE2602395C3 (de) | 1978-10-12 |
DE2602395B2 (de) | 1978-01-26 |
GB1574461A (en) | 1980-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |