GB1572914A - Process and apparatus for producing multi-doped preformed monocrystals - Google Patents

Process and apparatus for producing multi-doped preformed monocrystals Download PDF

Info

Publication number
GB1572914A
GB1572914A GB424277A GB424277A GB1572914A GB 1572914 A GB1572914 A GB 1572914A GB 424277 A GB424277 A GB 424277A GB 424277 A GB424277 A GB 424277A GB 1572914 A GB1572914 A GB 1572914A
Authority
GB
United Kingdom
Prior art keywords
monocrystal
crucible
raw material
doped
nucleus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB424277A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Produits Chimiques Ugine Kuhlmann
Ugine Kuhlmann SA
Original Assignee
Produits Chimiques Ugine Kuhlmann
Ugine Kuhlmann SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Produits Chimiques Ugine Kuhlmann, Ugine Kuhlmann SA filed Critical Produits Chimiques Ugine Kuhlmann
Publication of GB1572914A publication Critical patent/GB1572914A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB424277A 1977-01-14 1977-02-02 Process and apparatus for producing multi-doped preformed monocrystals Expired GB1572914A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7701014A FR2377224A2 (fr) 1977-01-14 1977-01-14 Procede et dispositif de fabrication de monocristaux preformes a dopage multiple

Publications (1)

Publication Number Publication Date
GB1572914A true GB1572914A (en) 1980-08-06

Family

ID=9185495

Family Applications (1)

Application Number Title Priority Date Filing Date
GB424277A Expired GB1572914A (en) 1977-01-14 1977-02-02 Process and apparatus for producing multi-doped preformed monocrystals

Country Status (6)

Country Link
JP (1) JPS6018636B2 (de)
CH (1) CH619007A5 (de)
DE (1) DE2704043C2 (de)
FR (1) FR2377224A2 (de)
GB (1) GB1572914A (de)
IT (1) IT1116306B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137741A1 (de) * 1980-09-24 1982-06-09 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zum herstellen von einkristallen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165470U (ja) * 1984-02-29 1984-11-06 ケイディディ株式会社 単結晶製造装置
EP0220174A4 (de) * 1985-05-17 1989-06-26 Schumacher Co J C Kontinuierlich gezogene siliziumeinkristallblöcke.
DE19936651A1 (de) * 1999-08-04 2001-02-15 Forsch Mineralische Und Metall Verfahren und Herstellung eines segmentierten Kristalls

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137741A1 (de) * 1980-09-24 1982-06-09 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zum herstellen von einkristallen

Also Published As

Publication number Publication date
CH619007A5 (en) 1980-08-29
DE2704043C2 (de) 1983-09-01
DE2704043A1 (de) 1978-07-20
FR2377224B2 (de) 1981-06-12
JPS5389890A (en) 1978-08-08
IT1116306B (it) 1986-02-10
FR2377224A2 (fr) 1978-08-11
JPS6018636B2 (ja) 1985-05-11

Similar Documents

Publication Publication Date Title
US2893847A (en) Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
LaBelle Jr et al. Growth of controlled profile crystals from the melt: Part I-Sapphire filaments
Stockbarger The production of large single crystals of lithium fluoride
US4203951A (en) Apparatus for growing single crystals from melt with additional feeding of comminuted charge
US3012865A (en) Silicon purification process
US4565600A (en) Processes for the continuous preparation of single crystals
US4303465A (en) Method of growing monocrystals of corundum from a melt
JPS6256395A (ja) 珪素棒を製造する方法および装置
JPH06345584A (ja) 単結晶引上げ方法およびその装置
US3434827A (en) Anisotropic monotectic alloys and process for making the same
GB1572914A (en) Process and apparatus for producing multi-doped preformed monocrystals
GB2084483A (en) Method of manufacturing single crystals
JPS647040B2 (de)
EP0400266B1 (de) Vorrichtung zur Herstellung von Silicium-Einkristallen
US2985519A (en) Production of silicon
US3272591A (en) Production of single crystals from incongruently melting material
US3899304A (en) Process of growing crystals
US3801309A (en) Production of eutectic bodies by unidirectional solidification
US3261722A (en) Process for preparing semiconductor ingots within a depression
US2990261A (en) Processing of boron compact
GB1572915A (en) Crystallisation device
US3960511A (en) Zone melting process
US4603034A (en) Crystal growing system
US3917462A (en) Method of producing sodium beta-alumina single crystals
US4045278A (en) Method and apparatus for floating melt zone of semiconductor crystal rods

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee
PCPE Delete 'patent ceased' from journal

Free format text: NO.4907,PAGE 906

PCNP Patent ceased through non-payment of renewal fee