GB1564130A - Semiconductor integrated circuit and a method for manufacturing the same - Google Patents
Semiconductor integrated circuit and a method for manufacturing the same Download PDFInfo
- Publication number
- GB1564130A GB1564130A GB44158/76A GB4415876A GB1564130A GB 1564130 A GB1564130 A GB 1564130A GB 44158/76 A GB44158/76 A GB 44158/76A GB 4415876 A GB4415876 A GB 4415876A GB 1564130 A GB1564130 A GB 1564130A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- voltage
- gate
- integrated circuit
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 53
- 239000012535 impurity Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 18
- 230000006872 improvement Effects 0.000 claims description 12
- 230000009467 reduction Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000003071 parasitic effect Effects 0.000 claims description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052753 mercury Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000002474 experimental method Methods 0.000 claims description 2
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 101001005711 Homo sapiens MARVEL domain-containing protein 2 Proteins 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having localised breakdown regions, e.g. built-in avalanching regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50130240A JPS5267276A (en) | 1975-10-29 | 1975-10-29 | Manufacture of semiconductor unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1564130A true GB1564130A (en) | 1980-04-02 |
Family
ID=15029463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44158/76A Expired GB1564130A (en) | 1975-10-29 | 1976-10-25 | Semiconductor integrated circuit and a method for manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5267276A (enExample) |
| DE (1) | DE2648646A1 (enExample) |
| GB (1) | GB1564130A (enExample) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034914B1 (enExample) * | 1969-10-27 | 1975-11-12 | ||
| US3821781A (en) * | 1972-11-01 | 1974-06-28 | Ibm | Complementary field effect transistors having p doped silicon gates |
| JPS5056189A (enExample) * | 1973-09-14 | 1975-05-16 |
-
1975
- 1975-10-29 JP JP50130240A patent/JPS5267276A/ja active Pending
-
1976
- 1976-10-25 GB GB44158/76A patent/GB1564130A/en not_active Expired
- 1976-10-27 DE DE19762648646 patent/DE2648646A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2648646C2 (enExample) | 1988-01-21 |
| JPS5267276A (en) | 1977-06-03 |
| DE2648646A1 (de) | 1977-05-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19961024 |