GB1545113A - Methods and apparatus for practising temperature gradient zone melting - Google Patents

Methods and apparatus for practising temperature gradient zone melting

Info

Publication number
GB1545113A
GB1545113A GB20471/76A GB2047176A GB1545113A GB 1545113 A GB1545113 A GB 1545113A GB 20471/76 A GB20471/76 A GB 20471/76A GB 2047176 A GB2047176 A GB 2047176A GB 1545113 A GB1545113 A GB 1545113A
Authority
GB
United Kingdom
Prior art keywords
practising
methods
temperature gradient
zone melting
gradient zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20471/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/578,807 external-priority patent/US4001047A/en
Priority claimed from US05/578,736 external-priority patent/US4041278A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1545113A publication Critical patent/GB1545113A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB20471/76A 1975-05-19 1976-05-18 Methods and apparatus for practising temperature gradient zone melting Expired GB1545113A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/578,807 US4001047A (en) 1975-05-19 1975-05-19 Temperature gradient zone melting utilizing infrared radiation
US05/578,736 US4041278A (en) 1975-05-19 1975-05-19 Heating apparatus for temperature gradient zone melting

Publications (1)

Publication Number Publication Date
GB1545113A true GB1545113A (en) 1979-05-02

Family

ID=27077566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20471/76A Expired GB1545113A (en) 1975-05-19 1976-05-18 Methods and apparatus for practising temperature gradient zone melting

Country Status (6)

Country Link
JP (1) JPS51140803A (nl)
DE (1) DE2621418C2 (nl)
FR (1) FR2312112A1 (nl)
GB (1) GB1545113A (nl)
NL (1) NL7605260A (nl)
SE (1) SE416597B (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting
JPS5939711A (ja) * 1982-08-26 1984-03-05 Ushio Inc ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054828B2 (de) * 1970-11-07 1974-06-27 Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) Vorrichtung und Verfahren zur Bedampfung von Substraten
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique

Also Published As

Publication number Publication date
FR2312112A1 (fr) 1976-12-17
SE7605678L (sv) 1976-11-20
DE2621418C2 (de) 1981-12-17
SE416597B (sv) 1981-01-19
DE2621418A1 (de) 1976-12-09
JPS51140803A (en) 1976-12-04
NL7605260A (nl) 1976-11-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee