JPS51140803A - Process and apparatus for melting in zone with temperature gradient - Google Patents

Process and apparatus for melting in zone with temperature gradient

Info

Publication number
JPS51140803A
JPS51140803A JP51056778A JP5677876A JPS51140803A JP S51140803 A JPS51140803 A JP S51140803A JP 51056778 A JP51056778 A JP 51056778A JP 5677876 A JP5677876 A JP 5677876A JP S51140803 A JPS51140803 A JP S51140803A
Authority
JP
Japan
Prior art keywords
melting
zone
temperature gradient
gradient
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51056778A
Other languages
English (en)
Inventor
Kuadouo Boo Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/578,807 external-priority patent/US4001047A/en
Priority claimed from US05/578,736 external-priority patent/US4041278A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS51140803A publication Critical patent/JPS51140803A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP51056778A 1975-05-19 1976-05-19 Process and apparatus for melting in zone with temperature gradient Pending JPS51140803A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/578,807 US4001047A (en) 1975-05-19 1975-05-19 Temperature gradient zone melting utilizing infrared radiation
US05/578,736 US4041278A (en) 1975-05-19 1975-05-19 Heating apparatus for temperature gradient zone melting

Publications (1)

Publication Number Publication Date
JPS51140803A true JPS51140803A (en) 1976-12-04

Family

ID=27077566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51056778A Pending JPS51140803A (en) 1975-05-19 1976-05-19 Process and apparatus for melting in zone with temperature gradient

Country Status (6)

Country Link
JP (1) JPS51140803A (ja)
DE (1) DE2621418C2 (ja)
FR (1) FR2312112A1 (ja)
GB (1) GB1545113A (ja)
NL (1) NL7605260A (ja)
SE (1) SE416597B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344487A (en) * 1976-08-25 1978-04-21 Wacker Chemitronic Process for preparing large surfaced silicon plate not supported on substrate
JPS5939711A (ja) * 1982-08-26 1984-03-05 Ushio Inc ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054828B2 (de) * 1970-11-07 1974-06-27 Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) Vorrichtung und Verfahren zur Bedampfung von Substraten
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344487A (en) * 1976-08-25 1978-04-21 Wacker Chemitronic Process for preparing large surfaced silicon plate not supported on substrate
JPS577117B2 (ja) * 1976-08-25 1982-02-08
JPS5939711A (ja) * 1982-08-26 1984-03-05 Ushio Inc ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法

Also Published As

Publication number Publication date
DE2621418A1 (de) 1976-12-09
NL7605260A (nl) 1976-11-23
DE2621418C2 (de) 1981-12-17
SE7605678L (sv) 1976-11-20
SE416597B (sv) 1981-01-19
GB1545113A (en) 1979-05-02
FR2312112A1 (fr) 1976-12-17

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