SE416597B - Sett att bilda ett omrade med utvald konduktivitetstyp i en kropp av halvledarmaterial och apparat for att utfora settet - Google Patents

Sett att bilda ett omrade med utvald konduktivitetstyp i en kropp av halvledarmaterial och apparat for att utfora settet

Info

Publication number
SE416597B
SE416597B SE7605678A SE7605678A SE416597B SE 416597 B SE416597 B SE 416597B SE 7605678 A SE7605678 A SE 7605678A SE 7605678 A SE7605678 A SE 7605678A SE 416597 B SE416597 B SE 416597B
Authority
SE
Sweden
Prior art keywords
picture
area
conductivity type
semiconductor material
selected conductivity
Prior art date
Application number
SE7605678A
Other languages
English (en)
Other versions
SE7605678L (sv
Inventor
J K Boah
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/578,807 external-priority patent/US4001047A/en
Priority claimed from US05/578,736 external-priority patent/US4041278A/en
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7605678L publication Critical patent/SE7605678L/sv
Publication of SE416597B publication Critical patent/SE416597B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
SE7605678A 1975-05-19 1976-05-19 Sett att bilda ett omrade med utvald konduktivitetstyp i en kropp av halvledarmaterial och apparat for att utfora settet SE416597B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/578,807 US4001047A (en) 1975-05-19 1975-05-19 Temperature gradient zone melting utilizing infrared radiation
US05/578,736 US4041278A (en) 1975-05-19 1975-05-19 Heating apparatus for temperature gradient zone melting

Publications (2)

Publication Number Publication Date
SE7605678L SE7605678L (sv) 1976-11-20
SE416597B true SE416597B (sv) 1981-01-19

Family

ID=27077566

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7605678A SE416597B (sv) 1975-05-19 1976-05-19 Sett att bilda ett omrade med utvald konduktivitetstyp i en kropp av halvledarmaterial och apparat for att utfora settet

Country Status (6)

Country Link
JP (1) JPS51140803A (sv)
DE (1) DE2621418C2 (sv)
FR (1) FR2312112A1 (sv)
GB (1) GB1545113A (sv)
NL (1) NL7605260A (sv)
SE (1) SE416597B (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting
JPS5939711A (ja) * 1982-08-26 1984-03-05 Ushio Inc ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054828B2 (de) * 1970-11-07 1974-06-27 Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) Vorrichtung und Verfahren zur Bedampfung von Substraten
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material

Also Published As

Publication number Publication date
JPS51140803A (en) 1976-12-04
DE2621418A1 (de) 1976-12-09
NL7605260A (nl) 1976-11-23
DE2621418C2 (de) 1981-12-17
SE7605678L (sv) 1976-11-20
GB1545113A (en) 1979-05-02
FR2312112A1 (fr) 1976-12-17

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